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  • AIP Publishing  (7)
  • 1
    Online Resource
    Online Resource
    Low-temperature resistivity upturn and weak antilocalization in layered Ta1.04Ru0.78Te4 bulk single crystal
    AIP Publishing ; 2023
    In:  Applied Physics Letters Vol. 123, No. 5 ( 2023-07-31)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 123, No. 5 ( 2023-07-31)
    Abstract: Quantum corrections to conductivity, which reflect charge carriers' quantum behavior, are a significant topic in condensed state physics and device design. A resistivity upturn at low temperature or weak antilocalization due to quantum corrections has been often observed experimentally. However, the coexistence of the low-temperature resistivity upturn and weak antilocalization from quantum corrections in bulk single crystals is seldom reported. Here, we report the transport properties of bulk Ta1.04Ru0.78Te4 single crystals. The samples showed a metallic behavior with a resistivity upturn below ∼8.6 K, which may be the result of quantum correction to the resistivity. The magnetic field enhances the upturn feature. The weakly nonlinear Hall resistivity with a positive slope suggests a p-type and multiband feature for bulk Ta1.04Ru0.78Te4; the electron and hole concentrations and mobilities of the samples are very close to each other and have the same order of magnitude. The Ta1.04Ru0.78Te4 single crystals displayed small and positive magnetoresistance, and the 3 K magnetoresistance at 9 T was about 15%. A lack of overlap of Kohler's plot curves at different temperature implies the violation of Kohler's rule. At low temperature, the dip-like magnetoresistance at low field strengths suggests a weak antilocalization in the Ta1.04Ru0.78Te4 single crystal. A small phase coherence length implies weakened screening and enhancing electron–electron interaction effects. These results reveal the quantum transport properties of Ta1.04Ru0.78Te4 single crystals, which can be considered in the future device design.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0160774
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    Negative thermal expansion and photoluminescence properties in a novel material ZrScW2PO12
    AIP Publishing ; 2016
    In:  Journal of Applied Physics Vol. 120, No. 20 ( 2016-11-28)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 120, No. 20 ( 2016-11-28)
    Abstract: A novel material, ZrScW2PO12, with negative thermal expansion (NTE) behavior, at least from 138 to 1300 K, and intense photoluminescence (PL) property is first reported in this paper. Temperature dependent Raman and PL spectral studies indicate that the material holds an orthorhombic structure down to about 74 K and exhibits NTE property in the temperature range. The intense PL covering nearly the whole visible region was observed and can be deconvoluted into four bands, which present different shifts with elevation of temperature. The abundant optical property may be attributed to n- and p-type like co-doping effect and the specific structure with the abnormal thermal expansion property of the material. The integrated properties might suggest potential applications of this material in light emitting diodes and other light emitting devices.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4968546
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
    Online Resource
    Online Resource
    Luminescence study in InGaAs/AlGaAs multi-quantum-well light emitting diode with p–n junction engineering
    AIP Publishing ; 2020
    In:  Journal of Applied Physics Vol. 127, No. 8 ( 2020-02-24)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 127, No. 8 ( 2020-02-24)
    Abstract: Overlapping between the quantum-well structure and p–n junction plays an important role in the development of high-efficiency GaAs-based light-emitting diodes (LEDs). In this work, we apply p–n junction engineering to study electro-photoluminescence spectra under open-circuit, forward voltage, and reverse voltage conditions. Through modifying the doping of p-layer or n-layer, luminescent characteristics are apparently improved as a result of the more effective overlapping of the quantum-well structure and p–n junction caused by energy band modification, with the more balanced carrier and stronger confinement in quantum wells. Furthermore, the electroluminescence spectra of all LEDs studied herein are consistent with the photoluminescence results. This work provides an explicit way to tune p- and n-doping to increase emission efficiency, which is important for research and industrial applications.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.5136300
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 4
    Online Resource
    Online Resource
    Resistance change effect in SrTiO3/Si (001) isotype heterojunction
    AIP Publishing ; 2018
    In:  Journal of Applied Physics Vol. 123, No. 8 ( 2018-02-28)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 123, No. 8 ( 2018-02-28)
    Abstract: Resistance switching has been observed in double and multi-layer structures of ferroelectric films. The higher switching ratio opens up a vast path for emerging ferroelectric semiconductor devices. An n-n+ isotype heterojunction has been fabricated by depositing an oxide SrTiO3 layer on a conventional n-type Si (001) substrate (SrTiO3/Si) by pulsed laser disposition. Rectification and resistive switching behaviors in the n-n+ SrTiO3/Si heterojunction were observed by a conductive atomic force microscopy, and the n-n+ SrTiO3/Si heterojunction exhibits excellent endurance and retention characteristics. The possible mechanism was proposed based on the band structure of the n-n+ SrTiO3/Si heterojunction, and the observed electrical behaviors could be attributed to the modulation effect of the electric field reversal on the width of accumulation and the depletion region, as well as the height of potential of the n-n+ junction formed at the STO/Si interface. Moreover, oxygen vacancies are also indicated to play a crucial role in causing insulator to semiconductor transition. These results open the way to potential application in future microelectronic devices based on perovskite oxide layers on conventional semiconductors.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.5018772
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 5
    Online Resource
    Online Resource
    Synthesis and thermal expansion property of Cr2W3O12 doped with WO3
    AIP Publishing ; 2023
    In:  AIP Advances Vol. 13, No. 8 ( 2023-08-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 13, No. 8 ( 2023-08-01)
    Abstract: Cr2W3O12, one of the members of the negative thermal expansion family of A2M3O12, is reported to be prepared by the solid-state method with Cr2O3 and WO3, which was impossible before. Here, the synthesis of Cr2W3O12 is carried out by solid-state sintering. The powder mixture of Cr2O3 and WO3 is obtained using Zn(CH3COO)2 · 2H2O as the catalyst. When Zn(CH3COO)2 · 2H2O (0–25 mol. %) is added to the mixture of Cr2O3 and WO3 with 15 and 20 mol. % of excess WO3, much of the Cr2W3O12 is formed especially because of the addition of 10 and 15 mol. % of Zn(CH3COO)2 · 2H2O. For comparison, commercial ZnO is used as an addition, but its catalytic role is much lower than that of Zn(CH3COO)2 · 2H2O. The roles of addition of Zn(CH3COO)2 · 2H2O and excess WO3 are ascribed to compensate the volatility of WO3 and speed up the reaction of Cr2O3 + 3WO3 → Cr2W3O12 by the catalytic action of Zn(CH3COO)2 · 2H2O, respectively. The prepared Cr2W3O12 samples show positive thermal expansion due to the influence of excess WO3.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/5.0156387
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 2583909-3
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  • 6
    Online Resource
    Online Resource
    Interaction of a weak shock wave with a discontinuous heavy-gas cylinder
    AIP Publishing ; 2015
    In:  Physics of Fluids Vol. 27, No. 6 ( 2015-06-01)
    Details
    In: Physics of Fluids, AIP Publishing, Vol. 27, No. 6 ( 2015-06-01)
    Abstract: The interaction between a cylindrical inhomogeneity and a weak planar shock wave is investigated experimentally and numerically, and special attention is given to the wave patterns and vortex dynamics in this scenario. A soap-film technique is realized to generate a well-controlled discontinuous cylinder (SF6 surrounded by air) with no supports or wires in the shock-tube experiment. The symmetric evolving interfaces and few disturbance waves are observed in a high-speed schlieren photography. Numerical simulations are also carried out for a detailed analysis. The refracted shock wave inside the cylinder is perturbed by the diffracted shock waves and divided into three branches. When these shock branches collide, the shock focusing occurs. A nonlinear model is then proposed to elucidate effects of the wave patterns on the evolution of the cylinder. A distinct vortex pair is gradually developing during the shock-cylinder interaction. The numerical results show that a low pressure region appears at the vortex core. Subsequently, the ambient fluid is entrained into the vortices which are expanding at the same time. Based on the relation between the vortex motion and the circulation, several theoretical models of circulation in the literature are then checked by the experimental and numerical results. Most of these theoretical circulation models provide a reasonably good prediction of the vortex motion in the present configuration.
    Type of Medium: Online Resource
    ISSN: 1070-6631 , 1089-7666
    URL: Article
    DOI: 10.1063/1.4922613
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 1472743-2
    detail.hit.zdb_id: 241528-8
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  • 7
    Online Resource
    Online Resource
    Sign change of anomalous Hall effect with temperature in Cr2.63V0.25Te4 single crystal
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 121, No. 19 ( 2022-11-07)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 121, No. 19 ( 2022-11-07)
    Abstract: Anomalous Hall effect, an interesting transport behavior, is of importance topic for fundamental physics and device application. Recently, the sign change of anomalous Hall effect (AHE) in some materials has being concerned. Here, we study the electrical transport, magnetic properties, and AHE of Cr2.63V0.25Te4 single crystals. Cr2.63V0.25Te4 shows a bad metal behavior with a resistivity kink at 178 K, corresponding to a peak on a heat capacity–temperature curve, and the strong electron correlation should be a dominant transport mechanism below 178 K. At this temperature, the magnetization shows a sharp magnetic transition. The linear Hall resistivity at a high field with a positive slope suggests a p-type conductivity for bulk Cr2.63V0.25Te4. The clear AHE is observed below 180 K with a larger anomalous Hall conductivity σxy ∼ 2000 Ω−1 cm−1 at 3 K. For 3–60 K, an AHE coefficient Rs is negative, and Rs is positive between 100 and 180 K. The sign change of AHE may be due to Fermi level crossing the overlap of 3d band in ferromagnetic transition-metal materials. Based on our analysis, the AHE mechanism should be the skew scattering. Our results reveal the interesting physical properties in Cr2.63V0.25Te4 single crystals and give another system to study AHE for future Hall device design.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0108940
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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