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  • AIP Publishing  (22)
  • 1
    Online Resource
    Online Resource
    Electrically driven optical resonance of spherical ZnO whispering gallery mode microcavity
    AIP Publishing ; 2021
    In:  Applied Physics Letters Vol. 119, No. 2 ( 2021-07-12)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 119, No. 2 ( 2021-07-12)
    Abstract: Spherical microcavities with low optical loss and high quality factor are attractive candidates for functional applications, including whispering gallery mode lasers, intracellular lasers, ultrasensitive biosensors, etc. In particular, electrically driven devices are beneficial for several applications such as optoelectronic integration. However, it is difficult to realize the electrically driven optoelectronic functions. In this study, the high-quality ZnO microspheres are fabricated by using a laser ablation method, and an excellent ultraviolet lasing system is achieved by optical pumping. Moreover, ultraviolet electroluminescence analysis demonstrates that ZnO microspheres are bonded to the p-GaN substrate. Furthermore, distinct resonant modes are obtained after inserting an appropriate AlN buffer layer at the n-ZnO/p-GaN interface. The optoelectronic behavior, charge carrier transportation, and recombination mechanism of the structure are systematically analyzed, and related interface modification, energy band alignment, and optical gain/loss contrast are also discussed. Overall, the results provide useful insights on further exploration of electrically pumped ZnO microsphere lasers.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0053600
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
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    Pressure drop of cemented high-concentration backfill in pipe flow: Loop test, model comparison and numerical simulation
    AIP Publishing ; 2023
    In:  Physics of Fluids Vol. 35, No. 10 ( 2023-10-01)
    Details
    In: Physics of Fluids, AIP Publishing, Vol. 35, No. 10 ( 2023-10-01)
    Abstract: Cemented high-concentration backfill (CHB) is an indispensable solution for mitigating risks associated with underground mining voids and surface tailings ponds. The accurate prediction of pressure drop of CHB in pipe flow is crucial for the design of backfilling systems. In this study, full factorial loop tests were conducted to obtain observed pressure drop data and rheological parameters of CHB, while considering the variables of binder content, solid fraction, and flow velocity. The rheometer method was also utilized to acquire the rheological parameters of CHB for comparison. Three analytical models and one numerical simulation method, which are considered highly accurate in the literature, were employed to predict the pressure drop of CHB in pipe flow. The findings indicate that the Buckingham model and the Darby–Melson model produce identical results as they are fundamentally equivalent. The Swamee–Aggarwal model and the single-phase flow simulation employ a similar mechanism as the Buckingham model, albeit with minor variations in mathematical treatment. The rheological parameters of CHB obtained through the rheometer method are considerably greater than those acquired by the loop test method, leading to significantly higher predicted pressure drop values from both the three analytical models and single-phase flow simulation when compared to the measured values. Whereas the mean deviation of the three analytical models is within 6.5% when employing rheological parameters of CHB determined by the loop test, with the Swamee–Aggarwal model being the most accurate, the mean error of single-phase flow simulation remains within 10%. It is suggested that the rheological parameters of CHB be determined through small-diameter loop testing. The Buckingham model and single-phase flow simulation are subsequently recommended for predicting pressure drop in industrial straight horizontal pipelines and complex piping systems, respectively. The results of this study facilitate the selection of the simplest method for accurately predicting the pressure drop of CHB in pipe flow.
    Type of Medium: Online Resource
    ISSN: 1070-6631 , 1089-7666
    URL: Article
    DOI: 10.1063/5.0170072
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 1472743-2
    detail.hit.zdb_id: 241528-8
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  • 3
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    ZnO/ZnSxSe1−x core/shell nanowire arrays as photoelectrodes with efficient visible light absorption
    AIP Publishing ; 2012
    In:  Applied Physics Letters Vol. 101, No. 7 ( 2012-08-13), p. 073105-
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 101, No. 7 ( 2012-08-13), p. 073105-
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4745918
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2012
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
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    Strain-tunable electronic structure, optical response, and high electron mobility of Bi2O2Se crystals
    AIP Publishing ; 2019
    In:  APL Materials Vol. 7, No. 8 ( 2019-08-01)
    Details
    In: APL Materials, AIP Publishing, Vol. 7, No. 8 ( 2019-08-01)
    Abstract: Newly fabricated semiconductor Bi2O2Se films exhibit excellent electron transport and optical properties, with potential application in optoelectronics. In this work, using first-principle calculations combined with the modified Becke-Johnson exchange potential, we have systematically investigated the electronic, transport, and optical properties of bulk Bi2O2Se. Our calculations have shown that external strain can effectively tune the bulk Bi2O2Se electronic bandgap and optical response and that, in particular, the appropriate strain can lead to a transition from an indirect to a direct bandgap. In addition, we found that electron mobility increased with Bi2O2Se crystal thickness and that the computed bulk Bi2O2Se acoustic-phonon-limited electron mobility could reach ∼940 and 535 cm2 V−1 s−1 in the a(b) and c directions at 300 K—which was much higher than that (∼50 cm2 V−1 s−1) achieved by the monolayer. There was a clear anisotropy of the electron mobility in bulk Bi2O2Se, which could be attributed to the synergistic effect between the elastic modulus anisotropy and the deformation potential. Our results not only have given new insight into the high carrier mobility of different thickness Bi2O2Se films (monolayer to bulk) but have also revealed the importance of the electron-transport direction to device performance. Together with the high carrier mobility, strain-tunable electronic structure, and optical response, Bi2O2Se films with different thicknesses have been shown to be very attractive for application to optoelectronic and electronic devices.
    Type of Medium: Online Resource
    ISSN: 2166-532X
    URL: Article
    DOI: 10.1063/1.5108853
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 2722985-3
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  • 5
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    A promising auxetic material of CaAs3 monolayer with anisotropic electro-mechanical and optical properties
    AIP Publishing ; 2021
    In:  Applied Physics Letters Vol. 119, No. 6 ( 2021-08-09)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 119, No. 6 ( 2021-08-09)
    Abstract: Two dimensional (2D) auxetic materials with large negative Poisson's ratio (NPR) are highly desirable for applications in medicine, tougher composites, defense, and so on. In this paper, by using first-principles calculations, we identify that the CaAs3 monolayer is an excellent auxetic material with large NPR value up to −0.36 along the hinges direction. The relatively small Young's modulus ranging from 23.61 to 40.50 N/m and the moderate critical strain ranging from 0.06 to 0.16 guarantee its extraordinary flexibility and moderate ductility. Owing to its unique crystal structure, the anisotropy of basic mechanical parameters, electrical conductance, and optical absorption are concentrated on the CaAs3 monolayer. Moreover, the electric field-induced tunability of optical absorption also emerged in the CaAs3 monolayer. All of these extraordinary properties allow 2D CaAs3 to have great potential applications in designing electromechanical devices and photoelectric devices as well.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0059811
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 6
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    Erratum: “A promising auxetic material of CaAs3 monolayer with anisotropic electro-mechanical and optical properties” [Appl. Phys. Lett. 119 , 063103 (2021)]
    AIP Publishing ; 2021
    In:  Applied Physics Letters Vol. 119, No. 9 ( 2021-08-30)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 119, No. 9 ( 2021-08-30)
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0067826
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 7
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    Current rectification in a single GaN nanowire with a well-defined p–n junction
    AIP Publishing ; 2003
    In:  Applied Physics Letters Vol. 83, No. 8 ( 2003-08-25), p. 1578-1580
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 83, No. 8 ( 2003-08-25), p. 1578-1580
    Abstract: This letter discusses Mg incorporation in GaN nanowires with diameters ∼35 nm, fabricated by vapor–liquid–solid synthesis in p-type nanowires. Turning on the Mg doping halfway through the synthesis produced nanowires with p–n junctions that showed excellent rectification properties down to 2.6 K. The nanowires are shown to possess good-quality, crystalline, hexagonal GaN inner cores surrounded by an amorphous GaN outer layer. Most wires grow such that the crystalline c axis is normal to the long axis of the nanowire. The temperature dependence of the current–voltage characteristics is consistent with electron tunneling through a voltage-dependent barrier.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1604190
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2003
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 8
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    Fabrication and characterization of Al2O3 /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells
    AIP Publishing ; 2015
    In:  AIP Advances Vol. 5, No. 12 ( 2015-12-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 5, No. 12 ( 2015-12-01)
    Abstract: We report on our fabrication and characterization of Al2O3/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al2O3 layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al2O3thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al2O3 film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al2O3 film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10−9 A/cm2 over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiOx layer formed between the interface of Si and the Al2O3 film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al2O3 coated CND structures is a truly viable approach to achieving higher device efficiency.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.4937744
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 2583909-3
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  • 9
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    Research on anti-irradiation properties of PDMS/MWCNT composite force-sensitive structure
    AIP Publishing ; 2022
    In:  AIP Advances Vol. 12, No. 2 ( 2022-02-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 12, No. 2 ( 2022-02-01)
    Abstract: This study aimed to design a polydimethylsiloxane multi-walled carbon nanotube composite force-sensitive structure. Five composite materials with different volume fractions of carbon nanotubes were prepared, and the microscopic morphology of the samples recorded. Conductive pathways were formed inside the composite materials. The force-sensitive performance was verified through tensile experiments on the material. The sample with a content of 3 vol. % had a sensitivity of up to 165, which was good for detecting small strains. The samples were irradiated with 60Co-γ rays, and the irradiation doses were 5, 10, 20, 50, and 100 kGy. After irradiation with the highest dose of 100 kGy, the sensitivity of the sample with a content of 3 vol. % was reduced to 125. The samples exposed to different irradiation doses were stretched and released 3000 times to verify the repeatability of the force sensitive characteristics; almost no difference was found in the resistance strain results of the sample. Experiments showed that the designed composite force-sensitive structure had high sensitivity, good repeatability, and good resistance to gamma radiation.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/5.0079698
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 2583909-3
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  • 10
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    Nanofriction oscillation driven by sublayer indirect contact of silicon tip sliding on few-layer graphene
    AIP Publishing ; 2019
    In:  AIP Advances Vol. 9, No. 5 ( 2019-05), p. 055023-
    Details
    In: AIP Advances, AIP Publishing, Vol. 9, No. 5 ( 2019-05), p. 055023-
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.5094406
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 2583909-3
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