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  • AIP Publishing  (54)
  • 1
    Online Resource
    Online Resource
    Modulating electrical transport properties of SnSe crystal to improve the thermoelectric power factor by adjusting growth method
    AIP Publishing ; 2020
    In:  Applied Physics Letters Vol. 116, No. 9 ( 2020-03-02)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 116, No. 9 ( 2020-03-02)
    Abstract: The SnSe crystal is a promising candidate in the field of thermoelectric materials. In order to elucidate basic physics in the SnSe system, here we report the heavily hole doping SnSe single crystals by the flux method (using alkali halide as solvent). Compared to bad-metal behavior of SnSe grown by the Bridgeman method, the flux-grown SnSe crystals show the metallic conductive behavior consistent with the Landau Fermi liquid (resistivity ρ ∼ T2) with temperatures ranging from 2 to 300 K. Combined angle-resolved photoemission spectroscopy and empirical Landau Fermi liquid theory, screening lengths λ of Coulomb electron–electron interaction U of SnSe grown by the flux method are 6.6 Å and 6.1 eV, which are much higher than those of normal metals. Remarkably, the excellent electrical conductivity (870 S/cm) of the SnSe crystal grown by the flux method at room temperature is attributed to the higher hole concentration (∼3.8 × 1019 cm−3) and large mobility (152.2 cm2 V−1 s−1). Meanwhile, these SnSe crystals still have large Seebeck coefficients (∼190 μV/K). Thus, the SnSe crystals grown by the flux method have an ultrahigh power factor [∼31.5 μW/(cm K2)] at room temperature, which is ten times larger than that of SnSe crystals grown by the Bridgeman method and as best as currently reported results. Our work shows a method for growing heavily hole-doped SnSe crystals, which provides a platform for understanding the electrical properties and improving its thermoelectric performance.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.5143101
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
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    Online Resource
    Photocatalytic and magnetic behaviors of BiFeO3 thin films deposited on different substrates
    AIP Publishing ; 2014
    In:  Journal of Applied Physics Vol. 116, No. 17 ( 2014-11-07)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 116, No. 17 ( 2014-11-07)
    Abstract: Single phase polycrystalline BiFeO3 thin films were grown on three different substrates via chemical solution deposition. Our results indicate that the band gap of as-prepared BiFeO3 films can be tuned (2.02–2.67 eV) by the grain size effects caused by the substrates. These BiFeO3 films show good photocatalytic properties by the degradation of Congo red solution under visible-light irradiation (λ  & gt; 400 nm). Additionally, weak ferromagnetic behaviors can be observed at room temperature in all the films, which should be correlated to the destruction of the incommensurate cycloid spin structure of BiFeO3 phase and the coexistence of Fe3+ and Fe2+ as confirmed by X-ray photoelectron spectroscopy.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4901066
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
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    Evolution of atomic structure and electronic transport properties in n-type Bi2Te3 films via Bi2 planar defects
    AIP Publishing ; 2021
    In:  Applied Physics Letters Vol. 118, No. 10 ( 2021-03-08)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 118, No. 10 ( 2021-03-08)
    Abstract: Bi2Te3 films always exhibit n-type transport characteristics even under the Bi-rich condition, which, however, was not clarified clearly. Herein, by virtue of advanced techniques such as scanning tunneling microscopy, angle-resolved photoelectron spectroscopy, scanning transmission electron microscopy, and x-ray photoelectron spectroscopy, we are able to identify the structural evolution on the atomic scale for Bi-rich Bi2Te3 films. The excess of Bi content will lead to the formation of p-type BiTe antisite defects; however, there is a doping limit for the excess of Bi to form BiTe antisites. Beyond this limit, the excess of Bi will form the n-type Bi2 planar defects in the van der Waals gap, the excellent electron donors, which can enhance the electron density by over one order of magnitude and up to the 1021 cm−3 range for Bi-rich Bi2Te3 films. Benefiting from the remarkable increase in the electron density and the suppression of carrier intrinsic excitations, Bi2Te3 films with Bi2 planar defects possess a much improved thermoelectric power factor, with a maximum value of 1.4 mW m−1 K−2 at 450 K, showing about 130% enhancement compared to that of the film without Bi2 intercalations. The discovery opens a new avenue to improve the thermoelectric properties of Bi2Te3 films utilizing the Bi2 planar defects.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0045518
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 211245-0
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  • 4
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    Online Resource
    Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory
    AIP Publishing ; 2018
    In:  Applied Physics Letters Vol. 113, No. 5 ( 2018-07-30)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 113, No. 5 ( 2018-07-30)
    Abstract: In this study, an Ag-Cu alloy was chosen as the electrode in conductive bridging random access memory (CBRAM), with results indicating a significant decrease in forming voltage. In addition, resistive switching characteristics as well as a retention test indicated better stability and a resistive switching window of at least an order. The switching time of the Ag-Cu alloy CBRAM is shorter than that of both Ag and Cu electrode CBRAMs under fast current-voltage (fast I-V). The experimental result indicated that the mechanism was dominated by the galvanic effect. Active atoms (Ag) captured electrons of inactive atoms (Cu) and generated metallic ions (Cu ions) in the alloy electrode. Cu ions drifted into the insulator and generated a conductive path when applying voltage bias. The use of this alloy as an electrode in CBRAM can significantly decrease forming voltage and enhance CBRAM characteristics.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.5023527
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 211245-0
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  • 5
    Online Resource
    Online Resource
    Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface
    AIP Publishing ; 2020
    In:  APL Materials Vol. 8, No. 5 ( 2020-05-01)
    Details
    In: APL Materials, AIP Publishing, Vol. 8, No. 5 ( 2020-05-01)
    Abstract: Heterogeneous integration of compound semiconductors on a Si platform leads to advanced device applications in the field of Si photonics and high frequency electronics. However, the unavoidable bubbles formed at the bonding interface are detrimental for achieving a high yield of dissimilar semiconductor integration by the direct wafer bonding technology. In this work, lateral outgassing surface trenches (LOTs) are introduced to efficiently inhibit the bubbles. It is found that the chemical reactions in InP–Si bonding are similar to those in Si–Si bonding, and the generated gas can escape via the LOTs. The outgassing efficiency is dominated by LOTs’ spacing, and moreover, the relationship between bubble formation and the LOT’s structure is well described by a thermodynamic model. With the method explored in this work, a 2-in. bubble-free crystalline InP thin film integrated on the Si substrate with LOTs is obtained by the ion-slicing and wafer bonding technology. The quantum well active region grown on this Si-based InP film shows a superior photoemission efficiency, and it is found to be 65% as compared to its bulk counterpart.
    Type of Medium: Online Resource
    ISSN: 2166-532X
    URL: Article
    DOI: 10.1063/5.0004427
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 2722985-3
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  • 6
    Online Resource
    Online Resource
    Electric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals
    AIP Publishing ; 2014
    In:  Journal of Applied Physics Vol. 116, No. 11 ( 2014-09-21)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 116, No. 11 ( 2014-09-21)
    Abstract: We have fabricated magnetoelectric heterostructures by growing ferromagnetic La1-xBaxMnO3 (x = 0.2, 0.4) thin films on (001)-, (110)-, and (111)-oriented 0.31Pb(In1/2Nb1/2)O3-0.35Pb(Mg1/3Nb1/2)O3-0.34PbTiO3 (PINT) ferroelectric single-crystal substrates. Upon poling along the [001], [110] , or [111] crystal direction, the electric-field-induced non-180° domain switching gives rise to a decrease in the resistance and an enhancement of the metal-to-insulator transition temperature TC of the films. By taking advantage of the 180° ferroelectric domain switching, we identify that such changes in the resistance and TC are caused by domain switching-induced strain but not domain switching-induced accumulation or depletion of charge carriers at the interface. Further, we found that the domain switching-induced strain effects can be efficiently controlled by a magnetic field, mediated by the electronic phase separation. Moreover, we determined the evolution of the strength of the electronic phase separation against temperature and magnetic field by recording the strain-tunability of the resistance [(ΔR/R)strain] under magnetic fields. Additionally, opposing effects of domain switching-induced strain on ferromagnetism above and below 197 K for the La0.8Ba0.2MnO3 film and 150 K for the La0.6Ba0.4MnO3 film, respectively, were observed and explained by the magnetoelastic effect through adjusting the magnetic anisotropy. Finally, using the reversible ferroelastic domain switching of the PINT, we realized non-volatile resistance switching of the films at room temperature, implying potential applications of the magnetoelectric heterostructure in non-volatile memory devices.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4896172
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 7
    Online Resource
    Online Resource
    Ferroelectricity in sol-gel derived Ba0.8Sr0.2TiO3 thin films using a highly diluted precursor solution
    AIP Publishing ; 1999
    In:  Applied Physics Letters Vol. 75, No. 14 ( 1999-10-04), p. 2132-2134
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 75, No. 14 ( 1999-10-04), p. 2132-2134
    Abstract: Barium strontium titanate films with good ferroelectricity have been obtained by a developed sol-gel processing, using a highly dilute spin-on solution. X-ray diffraction and scanning electron microscopy investigations show that large grains with the size of 100–200 nm in the films are formed from highly dilute spin-on solutions with layer-by-layer homoepitaxy. Polarization-electric field and dielectric constant-temperature (εr−T) measurements reveal that the ferroelectricity becomes more evident as the grain size increases. The measurements for quality Ba0.8Sr0.2TiO3 ferroelectric films derived from a 0.05 M solution have shown a remnant polarization of 3.5 μC/cm2, a coercive field of 86 kV/cm, and two distinctive phase transitions.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.124940
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 211245-0
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  • 8
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    Online Resource
    Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure
    AIP Publishing ; 2020
    In:  AIP Advances Vol. 10, No. 6 ( 2020-06-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 10, No. 6 ( 2020-06-01)
    Abstract: The effect of 3 MeV proton irradiation on interface traps under a Schottky contact in an AlGaN/GaN heterostructure has been investigated in this work. Utilizing the frequency-dependent conductance technique, the detailed information about interface traps under different proton doses has been evaluated. When the proton irradiation dose is increased to 5 × 1014 H+/cm2, it is observed that the deepest energy level of interface traps changes from 0.375 eV to 0.346 eV and the shallowest energy level changes from 0.284 eV to 0.238 eV. The corresponding energy range expands from 0.091 eV to 0.108 eV. Especially, the trap density at the deepest energy level and that at the shallowest energy level are reduced by 65% and 93%, respectively. Transmission electron microscopy and energy dispersive x-ray spectroscopy are also used to assess the Schottky contact interface, and no element inter-diffusion is observed after proton irradiation. The reverse gate leakage current decreases with an increase in the proton irradiation dose, which agrees with the reduction in interface trap density.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/5.0007650
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 2583909-3
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  • 9
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    Online Resource
    Shape-dependent absorption characteristics of three-layered metamaterial absorbers at near-infrared
    AIP Publishing ; 2011
    In:  Journal of Applied Physics Vol. 109, No. 7 ( 2011-04-01)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 109, No. 7 ( 2011-04-01)
    Abstract: We experimentally demonstrate the absorption properties of designed metamaterial absorbers in the near-infrared wavelength regime. For the rectangular-shaped case, we demonstrate its polarization dependent absorbance at various incident angles. For each polarization, the absorbance is insensitive to the incident angle (up to 60°) and a maximum absorbance of 0.95 is obtained. Of particular interest we experimentally observe an absorption peak corresponding to a high-order resonance at 60° with an absorbance of 0.68 excited by the TM polarization. For the square-shaped case, we show its polarization-independent absorption property. A maximum absorbance around 0.65 is achieved at normal incidence and it remains high for incidence angles up to 50°.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3573495
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2011
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 10
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    Online Resource
    Effect of magnetic field annealing on magnetic properties for nanocrystalline (Fe1− x Co x )78.4Si9B9Nb2.6Cu1 alloys
    AIP Publishing ; 2013
    In:  Journal of Applied Physics Vol. 113, No. 17 ( 2013-05-07)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 113, No. 17 ( 2013-05-07)
    Abstract: The crystalline volume fraction Vcry, saturation magnetostriction λs, effective magnetic anisotropy 〈K〉, and temperature dependence of initial permeability (μi-T curves) for magnetic and nonmagnetic annealed (Fe1−xCox)78.4Si9B9Nb2.6Cu1 (x = 0.35, 0.5, 0.65, 1) alloys were investigated. The results showed that the magnetic annealing can enhance the Vcry and significantly reduce the λs. The Co content has an obvious effect on the λs and 〈K〉, the largest 〈K〉 was observed for the x = 0.5 magnetic annealed sample, which can be explained with magnetic atoms pair ordering theory. And the best high-temperature magnetic softness was obtained for x = 0.35 magnetic annealed sample, in which the lower λs and larger Vcry were observed.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4795620
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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