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  • AIP Publishing  (5)
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  • AIP Publishing  (5)
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  • 1
    Online Resource
    Online Resource
    Pyroelectric linear array infrared sensors made of c -axis-oriented La-modified PbTiO3 thin films
    AIP Publishing ; 1988
    In:  Journal of Applied Physics Vol. 63, No. 12 ( 1988-06-15), p. 5868-5872
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 63, No. 12 ( 1988-06-15), p. 5868-5872
    Abstract: High sensitive pyroelectric linear array infrared sensors have been fabricated by using highly c-axis-oriented and spontaneous polarized La-modified PbTiO3 (PLT) thin films. The PLT thin films were deposited on (100)-oriented Pt thin film on (100)-cleaved MgO single crystals by rf magnetron sputtering. The PLT thin films have high figures of merit for voltage responsivity (Rv) and specific detectivity (D*) without a poling treatment. Two types of linear array sensors, reticulated and nonreticulated ones, were fabricated. The reticulated and nonreticulated sensors have 64 elements with 200-μm pitch and 128 elements with 100-μm pitch, respectively. Ni-Cr electrodes of approximate area 1.9×10−4 or 3.0×10−4 cm2 were deposited by vacuum evaporation on the PLT thin films with a thickness of 3–4 μm. Pyroelectric coefficients and their uniformity increased upon decreasing the deposition area of an element. Therefore, the elements of reticulated sensors have considerably larger Rv and D* compared with the nonreticulated ones. The nonreticulated sensors have a very high resolution of 10 elements/mm, a large Rv of 900 V/W at 100 Hz, and a high D* (500 K, 100, 1) of 1.5×108 cm Hz1/2/W. Furthermore, the reticulated ones have a very large Rv of 2200 V/W, a remarkably high D* of 6×108 cm Hz1/2/W, and a very low thermal cross talk of & lt;3% at 100 Hz.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.340276
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1988
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Preparation and characteristics of pyroelectric infrared sensors made of c -axis oriented La-modified PbTi03 thin films
    AIP Publishing ; 1987
    In:  Journal of Applied Physics Vol. 61, No. 1 ( 1987-01-01), p. 411-415
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 61, No. 1 ( 1987-01-01), p. 411-415
    Abstract: Highly c-axis oriented La-modified PbTiO3 (PLT) thin films were deposited on (100) oriented Pt thin film or (100) cleaved MgO single crystals by rf-magnetron sputtering. Figures of merit for infrared detector were studied on the PLT thin films. It was found that a composition Pb1−xLaxTi1−x/4O3 where x=0.10 (PL10) was the most suitable for the infrared detector. The films have the advantage of having pyroelectric effect and polarization with the same direction even without a poling treatment. The films have high figures of merit Fv(=γ/cvεr) of 0.83×10−10 (C cm/J) and Fm(=γ/cv(εr tan δ)1/2) of 1.2×10−8 (C cm/J) because of relative low-dielectric constant εr of 200 and high-pyroelectric coefficient γ of 5.3×10−8 C/cm2 K. Both the Fv and the Fm of the films are 3 times as large as those of PbTiO3 ceramics. High sensitive pyroelectric infrared sensors were fabricated by using the PL10 films. The thickness of the films is 2 μm, and the electrodes were vacuum evaporated Ni-Cr of approximate area 7×10−4 cm2. The MgO substrate under the sensing area is etched off by phosphoric acid. The sensors have a large voltage responsivity of 2400 (V/W) at 25 Hz. A high specific detectivity D*(500,25,1) of 5×108 (cm(Hz)1/2 /W) has been attained.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.338839
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1987
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
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  • 3
    Online Resource
    Online Resource
    Preparation of c -axis oriented PbTiO3 thin films and their crystallographic, dielectric, and pyroelectric properties
    AIP Publishing ; 1986
    In:  Journal of Applied Physics Vol. 60, No. 1 ( 1986-07-01), p. 361-367
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 60, No. 1 ( 1986-07-01), p. 361-367
    Abstract: Highly c-axis oriented and epitaxial PbTiO3 thin films were grown on MgO single crystals and epitaxial Pt film substrates by the rf-magnetron sputtering method. The films with a 98% c-axis orientation rate were obtained under low deposition rate ( & lt;20 Å/min) and low gas pressure (∼1 Pa) using a PbO-rich target. Phase transition of the PbTiO3 thin film was studied by high-temperature x-ray diffraction. It was found that the c-axis of the tetragonal phase was parallel to the substrate just below Tc and the c-axis becomes perpendicular to the substrate with lowering of temperature. These films show high resistivity (∼1010/Ω cm). It was found that significant pyroelectric currents are detected on all specimens without poling treatment. The polarization directions of the films are the same in all specimens. One of these films had a low relative dielectric constant of 97 and a high pyroelectric coefficient of 2.5×10−8 C/cm2 K without poling treatment. These films will be suitable for applications such as pyroelectric infrared detector and piezoelectric transducer.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.337654
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1986
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 4
    Online Resource
    Online Resource
    Epitaxial growth and the crystallographic, dielectric, and pyroelectric properties of lanthanum-modified lead titanate thin films
    AIP Publishing ; 1986
    In:  Journal of Applied Physics Vol. 60, No. 8 ( 1986-10-15), p. 2914-2919
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 60, No. 8 ( 1986-10-15), p. 2914-2919
    Abstract: Using an rf-magnetron sputtering method, highly c-axis-oriented La-modified PbTiO3 (PLT) thin films with compositions of Pb1−xLaxTi1−x/4O3, where x=0.05, 0.10, and 0.15, have been obtained on MgO single-crystal and epitaxial Pt thin-film substrates under conditions of low gas pressure and low deposition rate. The degree of c-axis orientation of the PLT films decreases, and the tetragonality of PLT becomes smaller with increasing La content. The Curie point of the films decreases at a rate of 18 °C/at. % of La with an increase of La content. D-E hysteresis loops were observed, and these became slim and symmetric with increasing La. It was found that significant pyroelectric currents are detected on all as-grown specimens even without a poling treatment, and the directions are the same in all specimens. Relative dielectric constant εr decreases, and pyroelectric coefficient γ increases with increasing degree of c-axis orientation. εr and γ became large with increase of La content in the films. Considering the figure of merit for pyroelectric infrared detection and the temperature coefficient of γ, it was concluded that PLT films with x=0.10 were good material for pyroelectric infrared detectors.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.337078
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1986
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 5
    Online Resource
    Online Resource
    Preparation of epitaxial Pb(Zr x Ti1− x )O3 thin films and their crystallographic, pyroelectric, and ferroelectric properties
    AIP Publishing ; 1989
    In:  Journal of Applied Physics Vol. 65, No. 4 ( 1989-02-15), p. 1666-1670
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 65, No. 4 ( 1989-02-15), p. 1666-1670
    Abstract: Lead zirconate-titanate (PZT) thin films with tetragonal and rhombohedral structures have been successfully grown with good epitaxy on MgO single crystals and on [100]-oriented platinum thin films by rf-magnetron sputtering. The PZT films were obtained by using sputtering targets with compositions of Pb(ZrxTi1−x)O3, where x=0.2–0.8. The tetragonal PZT thin films have a strong [001] orientation, and the rhombohedral ones are (100) oriented. Asymmetric D-E hysteresis loops were observed on the tetragonal films. Nearly symmetric loops were observed on the rhombohedral films and the rhombohedral loops around the morphotropic phase boundary had slim loops. The tetragonal thin films of x=0.45 have a spontaneous polarization of 45 μC/cm2, a remanent polarization of 40 μC/cm2, and a coercive field of 150 kV/cm. It was found that significant pyroelectric currents are detected on both [001]-oriented tetragonal and (100)-oriented rhombohedral PZT films even without a poling treatment, and the direction is the same in all specimens. The relative dielectric constant εr achieves a maximum at the morphotropic phase boundary, as occurs for PZT ceramics. The pyroelectric coefficient γ increases with increase of Zr content and reaches a peak near the phase boundary in the tetragonal thin films. On the other hand, for the rhombohedral films, γ drops around the phase boundary and increases upon increasing Zr content. Thin films of x=0.45 have εr of 400 and γ of 4.2×10−8 (C/cm2 K). These films will be suitable for use in piezoelectric transducers and pyroelectric infrared detectors.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.342936
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1989
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
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