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  • AIP Publishing  (43)
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  • AIP Publishing  (43)
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  • 1
    Online Resource
    Online Resource
    Structural and photoluminescence properties of In0.9(Ga/Al)0.1As self-assembled quantum dots on InP substrate
    AIP Publishing ; 2000
    In:  Journal of Applied Physics Vol. 88, No. 1 ( 2000-07-01), p. 533-536
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 88, No. 1 ( 2000-07-01), p. 533-536
    Abstract: Self-assembled In0.9Ga0.1As, In0.9Al0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy electron diffraction. Experimental results reveal clear differences in QD formation, size distribution, and luminescence between the InAs and In0.9(Ga/Al)0.1As samples, which show the potential of introducing ternary compositions to adjust the structural and optical properties of QDs on an InP substrate.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.373691
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 2
    Online Resource
    Online Resource
    Analysis of the performance of a new developed shear stress transport model in a turbulent impinging jet flow
    AIP Publishing ; 2019
    In:  Physics of Fluids Vol. 31, No. 11 ( 2019-11-01)
    Details
    In: Physics of Fluids, AIP Publishing, Vol. 31, No. 11 ( 2019-11-01)
    Abstract: In this work, a developed Shear Stress Transport (SST) model has been used for numerically simulating the problem of turbulent round jet impingement heat transfer. Based on the cross-diffusion correction activated in the logarithmic and wake parts of a region by using a blending function in the destruction term of turbulent kinetic energy k, the developed SST model is capable of recovering the effect of the pressure gradient ignored by the standard SST model. Also, the Kato-Launder model is added in the production term of k to consider the stagnating flows. The developed model has been investigated for turbulent round jets with the nozzle-plate spacing of 2, 4, and 6. The model is verified by comparing with the measurements and the results of the standard SST model, the SST with low-Re model, the Launder and Sharma model with the Yap model, the k-ω model, and the Reynolds-averaged Navier-Stokes/large eddy simulation model. Comparing with other referred methods, the developed model obtains accurate prediction in terms of velocity and pressure. As for heat transfer, it also possesses appropriate performance. Moreover, the developed model is sensitive to the pressure gradient, which helps the model be capable of reproducing accurate flow structures. By using the present model, it has been found that the velocity profiles are dominated by the turbulent kinetic energy away from walls. Meanwhile, the results show that the inner peak of heat transfer is connected with the radial pressure gradient at the stagnation point.
    Type of Medium: Online Resource
    ISSN: 1070-6631 , 1089-7666
    URL: Article
    DOI: 10.1063/1.5118675
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 1472743-2
    detail.hit.zdb_id: 241528-8
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  • 3
    Online Resource
    Online Resource
    Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs
    AIP Publishing ; 2023
    In:  Applied Physics Letters Vol. 122, No. 17 ( 2023-04-24)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 122, No. 17 ( 2023-04-24)
    Abstract: In this work, the effect of in situ SiNx grown with different carrier gas on the structural and electrical properties of the SiNx/AlGaN/GaN MIS-HEMTs is studied. It was found that the growth rate of SiNx grown with N2 as carrier gas (N2-SiNx) is more sensitive to different growth conditions, while the growth rate of SiNx grown with H2 as carrier gas (H2-SiNx) is very stable due to the inhibiting effects of H2 carrier gas on the SiH4–NH3 forward reactions. More importantly, a continuous and smooth SiNx growth at the initial stage can be realized with H2 carrier gas due to its faster surface migration, leading to a decent surface morphology and sharp interface of H2-SiNx. As a result, the SiNx passivated device with H2 as carrier gas shows improved performance compared to that with N2 as carrier gas, featuring ultra-low interface-state density of 2.8 × 1010 cm−2 eV−1, improved on- and off-state current, reduced threshold voltage shift, and mitigated current collapse, especially after long-term electrical stress. These results not only elaborate on the growth mechanisms of in situ SiNx with different carrier gases but also highlight the advances of H2 as carrier gas for in situ SiNx growth, providing an effective strategy to tailor the passivation schemes for GaN-based devices.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0146447
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    Online Resource
    Online Resource
    Enhanced electricity generation and pollutant removal in a microbial fuel cell combined with a solar cell
    AIP Publishing ; 2015
    In:  Journal of Renewable and Sustainable Energy Vol. 7, No. 4 ( 2015-07-01)
    Details
    In: Journal of Renewable and Sustainable Energy, AIP Publishing, Vol. 7, No. 4 ( 2015-07-01)
    Abstract: A new method combined microbial fuel cell (MFC) with polycrystalline silicon solar cell (PSSC) was exploited to investigate its energy generation and its performance on the removal of hexavalent chromium (Cr(VI)). The open circuit voltage (Vocv) of MFC-PSSC could reach 3.540 V, which, to our best knowledge, was the maximum Vocv of MFC reported. The power density of MFC-PSSC was 754.4 mW·m−2 under simulated solar light irradiation, which increased by 990% compared to 76.2 mW·m−2 of a single MFC. The concentration of Cr(VI) in MFC was 17.06 mg·l−1, which was around 12.6 times higher than that in the MFC-PSSC (1.35 mg·l−1) after operation of 48 h. The concentration of chemical oxygen demand in MFC (264 mg·l−1) was around 6 times higher than that in the MFC-PSSC (44 mg·l−1) after operation of 48 h. This study would provide a new insight into the energy generation from MFC coupling with solar cells, and provide exciting opportunities for the utilization of solar energy and bio-energy.
    Type of Medium: Online Resource
    ISSN: 1941-7012
    URL: Article
    DOI: 10.1063/1.4926801
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 2444311-6
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  • 5
    Online Resource
    Online Resource
    Photoresist as a choice of molecularly thin gate dielectrics in graphene-based devices
    AIP Publishing ; 2021
    In:  APL Materials Vol. 9, No. 3 ( 2021-03-01)
    Details
    In: APL Materials, AIP Publishing, Vol. 9, No. 3 ( 2021-03-01)
    Abstract: Ultra-thin polymeric dielectrics are of great interest for the ever-increasing development of high-performance novel electronics. Up to date, the fabrication of polymer layers as thin as few nanometers is still an extremely demanding process. Here, we report a facile method to fabricate molecularly thin (4 nm–5 nm) plasma-hardened photoresist (PHPR) layers by applying O2 plasma to treat the surface of the photoresist (SPR 220) to cross-link the constituent novolac resin. It is found that such ultra-thin PHPR layers also possess molecular-scale smoothness, superior chemical resistance, and thermal endurance. Furthermore, we develop an in situ transfer technique that is compatible with the planar process to stabilize the patterning of the PHPR layers. By using PHPR layers as the gate dielectric and tunneling barrier (breakdown strength up to 500 kV/mm), a graphene-PHPR-graphene (G-PHPR-G) sandwich-like structure is demonstrated, exhibiting a high photo-responsivity ( & gt;13 A/W) under low operating voltages ( & lt;1 V), which enables the ultra-thin PHPR layers to be a very promising candidate for the dielectrics in low-power, flexible electronic applications.
    Type of Medium: Online Resource
    ISSN: 2166-532X
    URL: Article
    DOI: 10.1063/5.0034996
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 2722985-3
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  • 6
    Online Resource
    Online Resource
    Epitaxial integration and properties of SrRuO3 on silicon
    AIP Publishing ; 2018
    In:  APL Materials Vol. 6, No. 8 ( 2018-08-01)
    Details
    In: APL Materials, AIP Publishing, Vol. 6, No. 8 ( 2018-08-01)
    Abstract: We report the integration of SrRuO3, one of the most widely used oxide electrode materials in functional oxide heterostructures, with silicon using molecular-beam epitaxy and an SrTiO3 buffer layer. The resulting SrRuO3 film has a rocking curve full width at half maximum of 0.01°, a resistivity at room temperature of 250 μΩ cm, a residual resistivity ratio (ρ300 Kρ4 K) of 11, and a paramagnetic-to-ferromagnetic transition temperature of ∼160 K. These structural, electrical, and magnetic properties compare favorably to the best reported values for SrRuO3 films on silicon and rival those of epitaxial SrRuO3 films produced directly on SrTiO3 single crystals by thin film growth techniques other than molecular-beam epitaxy. These high quality SrRuO3 films with metallic conductivity on silicon are relevant to integrating multi-functional oxides with the workhorse of semiconductor technology, silicon.
    Type of Medium: Online Resource
    ISSN: 2166-532X
    URL: Article
    DOI: 10.1063/1.5041940
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 2722985-3
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  • 7
    Online Resource
    Online Resource
    Correlating Photovoltaic Performance of Dye-Sensitized Solar Cell to the Film Thickness of Titania via Numerical Drift-Diffusion Simulations
    AIP Publishing ; 2016
    In:  Chinese Journal of Chemical Physics Vol. 29, No. 6 ( 2016-12-27), p. 735-741
    Details
    In: Chinese Journal of Chemical Physics, AIP Publishing, Vol. 29, No. 6 ( 2016-12-27), p. 735-741
    Abstract: The thickness of TiO2 film is vital to realize the optimization on photovoltaic performance of dye sensitized solar cells (DSSCs). Herein, the process of charge separation in DSSCs was simulated by using a drift-diffusion model. This model allows multiple-trapping diffusion of photo-generated electrons, as well as the back reaction with the electron acceptors in electrolyte, to be mimicked in both steady and non-steady states. Numerical results on current-voltage characteristics allow power conversion efficiency to be maximized by varying the thickness of TiO2 film. Charge collection efficiency is shown to decrease with film thickness, whereas the flux of electron injection benefits from the film thickening. The output of photocurrent is actually impacted by the two factors. Furthermore, recombination rate constant is found to affect the optimized film thickness remarkably. Thicker TiO2 film is suitable to the DSSCs in which back reaction is suppressed sufficiently. On the contrary, the DSSCs with the redox couple showing fast electron interception require thinner film to alleviate the charge loss via recombination. At open circuit, electron density is found to decrease with film thickness, which engenders not only the reduction of photovoltage but also the increase of electron lifetime.
    Type of Medium: Online Resource
    ISSN: 1674-0068 , 2327-2244
    URL: Article
    DOI: 10.1063/1674-0068/29/cjcp1604090
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 2381472-X
    SSG: 6,25
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  • 8
    Online Resource
    Online Resource
    Samarium modified lead-free potassium sodium niobate-based grain orientation-controlled ceramics and its ultrasonic transducer applications
    AIP Publishing ; 2023
    In:  Journal of Applied Physics Vol. 134, No. 4 ( 2023-07-28)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 134, No. 4 ( 2023-07-28)
    Abstract: Environment-friendly lead-free potassium sodium niobate-based piezoelectric materials have been widely used in acoustic device applications because of its high piezoelectric response, high Curie temperature, and low acoustic impedance. In our previous works, samarium modified 0.915(K0.45Na0.5Li0.05)NbO3–0.075BaZrO3–0.01(Bi0.5Na0.5)TiO3 (Sm–KNLN–BZ–BNT) ceramics have achieved high piezoelectric properties with good thermal stability. To further improve its properties and thermal stability, grain orientation-controlled methods have been introduced to Sm–KNLN–BZ–BNT ceramics. In this work, textured Sm–KNLN–BZ–BNT ceramics with a 93% ⟨001⟩c-oriented textured degree have been prepared. The samples have achieved a d33* value with 532 pm/V and better thermal stability between room temperature to 150 °C than the non-textured samples. Moreover, ultrasonic transducers with a 25 MHz center frequency have been designed and fabricated by the textured Sm–KNLN–BZ–BNT ceramics. The peak-to-peak of the transducers has reached a 1.78 V high level, which demonstrated the textured Sm–KNLN–BZ–BNT ceramics are a good candidate for acoustic applications.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/5.0159739
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 9
    Online Resource
    Online Resource
    Penetrative imaging of sub-surface microstructures with a near-field microwave microscope
    AIP Publishing ; 2014
    In:  Journal of Applied Physics Vol. 116, No. 4 ( 2014-07-28)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 116, No. 4 ( 2014-07-28)
    Abstract: Microwaves have the capability of penetrating through materials with low permittivity. By means of a near-field scanning microwave microscope system, we obtained two-dimensional maps of the incident microwave's reflection coefficient intensity and frequency shift, which correspond well to the spatial distribution and electrical conductance of fluids and metallic thin film structures hidden underneath 15–170 μm thick dielectric covers. The lateral resolution and sensitivity to conductivity for the target samples were found closely related to the thickness of the cover layer. The technique offers a real-time, in-situ, and a non-invasive approach to monitor the local chemical reactions, the motion of fluids, and the distribution or concentrations of ions or bio-materials in lab-on-a-chip systems. This technique also has the potential to be developed for the detection of live cells and tissues.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4891215
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 10
    Online Resource
    Online Resource
    Vibration-induced detachment of droplets on superhydrophobic surfaces
    AIP Publishing ; 2022
    In:  Physics of Fluids Vol. 34, No. 5 ( 2022-05-01)
    Details
    In: Physics of Fluids, AIP Publishing, Vol. 34, No. 5 ( 2022-05-01)
    Abstract: Vibration is a robust and efficient method for droplet removal from superhydrophobic surfaces. In the present work, we experimentally investigated the dynamics of droplets on vibrating superhydrophobic surfaces, and established a mass-spring-damper theoretical model, to clarify the underlying physics of vibration-induced droplet detachment. Different droplet oscillation patterns were experimentally observed, namely, the droplet motion is in the same/opposite direction with the substrate when the vibration frequency is less/higher than the resonance frequency, respectively, and the transition occurs at the resonant frequency. The motion of the droplet is found to be composed of a transient response by the droplet free oscillation and a steady-state response by vibrating substrates. The critical condition for droplet detachment was identified to be the droplet energy (sum of the surface energy and kinetic energy) exceeds the surface adhesion energy. At the resonance frequency, the vibrational energy of the substrate is progressively accumulated in the droplet with the highest energy maintenance efficiency, and a small amplitude of vibration could therefore yield droplet detachment. The separation time shortens with the vibration amplitude and minimizes at the resonance frequency at a given amplitude. Our findings are helpful for the utilization of vibrating superhydrophobic surfaces for droplet removal.
    Type of Medium: Online Resource
    ISSN: 1070-6631 , 1089-7666
    URL: Article
    DOI: 10.1063/5.0089087
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 1472743-2
    detail.hit.zdb_id: 241528-8
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