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  • AIP Publishing  (777)
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  • AIP Publishing  (777)
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  • 1
    In: Applied Physics Letters, AIP Publishing, Vol. 120, No. 9 ( 2022-02-28)
    Abstract: Designing a flexible transparent electronic device with biological functions is of great interest for the future wearable integrated artificial intelligence equipment. Nociceptor is a vitally important receptor of sensory neuron, which is responsible for providing a warning signal by recognizing noxious stimuli to reduce potential physical injury. Here, a flexible transparent artificial nociceptor device is demonstrated to simulate the biological nociceptor functions based on the indium tin oxide (ITO) memristor, which exhibits forming-free and reproducible threshold resistive switching behaviors. This structurally simple memristor can imitate the key features of biological nociceptor, including “threshold,” “relaxation,” and “no adaptation” behaviors and sensitization phenomena of hyperalgesia and allodynia upon external stimuli. Finally, an alarm system is built to demonstrate the simplicity and feasibility of this artificial nociceptor for future neuromorphic systems. These results indicate a potential application of the ITO memristor in the future flexible invisible neuromorphic cognitive platform.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    In: Physics of Plasmas, AIP Publishing, Vol. 30, No. 6 ( 2023-06-01)
    Abstract: A record duration of a 310 s H-mode plasma (H98y2 ∼ 1.3, ne/nGW ∼ 0.7, fBS & gt; 50%) has been recently achieved on experimental advanced superconducting tokamak (EAST) with metal walls, exploiting the device's improved long-pulse capabilities. The experiment demonstrates good control of tungsten concentration, core/edge MHD stability, and particle and heat exhaust with an ITER-like tungsten divertor and zero injected torque, establishing a milestone on the path to steady-state long-pulse high-performance scenarios in support of ITER and CFETR. Important synergistic effects are leveraged toward this result, which relies purely on radio frequency (RF) powers for heating and current drive (H & CD). On-axis electron cyclotron heating enhances the H & CD efficiency from lower hybrid wave injection, increasing confinement quality and enabling fully non-inductive operation at high density (ne/nGW ∼ 70%) and high poloidal beta (βP ∼ 2.5). A small-amplitude grassy edge localized mode regime facilitates the RF power coupling to the H-mode edge and reduces divertor sputtering/erosion. The high energy confinement quality (H98y2 ∼ 1.3) is achieved with the experimental and simulated results pointing to the strong effect of Shafranov shift on turbulence. Transport analysis suggests that trapped electron modes dominate in the core region during the record discharge. The detailed physics processes (RF synergy, core-edge integration, confinement properties, etc.) of the steady-state operation will be illustrated in the content. In the future, EAST will aim at accessing more relevant dimensionless parameters to develop long-pulse high-performance plasma toward ITER and CFETR steady-state advanced operation.
    Type of Medium: Online Resource
    ISSN: 1070-664X , 1089-7674
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 1472746-8
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  • 3
    In: Applied Physics Letters, AIP Publishing, Vol. 109, No. 20 ( 2016-11-14)
    Abstract: ZnO/CdS core/shell nanorods (NRs) constructed of ZnO NR cores and CdS coating shells were fabricated by hydrothermally growing ZnO NRs and pulsed laser depositing CdS coatings on the grown ZnO NRs. The fabricated ZnO/CdS NRs were characterized by field-emission scanning electron microscopy, transmission electron microscopy, selected-area electron diffraction, X-ray diffraction, and Raman backsattering spectroscopy. The optical and photoelectrochemical properties were evaluated and their correlation was studied. The ZnO cores and CdS shells are both in a hexagonal wurtzite structure with c-axis orientation. Compared with the bare ZnO NRs, the heterostructured ZnO/CdS NRs exhibit improved optical properties including strong visible light absorption and quenched photoluminescence. The former facilitates the generation of electron-hole pairs by visible optical excitation, and the latter reveals the suppressed radiative recombination of photogenerated charges and hence efficient charge transfer and separation. Correlated with the improved optical properties and charge behaviors, the ZnO/CdS NRs show high visible photoelectrochemical activity and excellent photoswitching property, and high visible light harvesting efficiencies can be expected for the ZnO/CdS NRs.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    In: Applied Physics Letters, AIP Publishing, Vol. 102, No. 5 ( 2013-02-04)
    Abstract: In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the Ni/ZrO2/Pt device. The device shows stable bipolar resistive switching behaviors after forming process, which is similar to the Ag/ZrO2/Pt and Cu/ZrO2/Pt devices. Using in situ transmission electron microscopy, we observe in real time that several conductive filaments are formed across the ZrO2 layer between Ni and Pt electrodes after forming. Energy-dispersive X-ray spectroscopy results confirm that Ni is the main composition of the conductive filaments. The ON-state resistance increases with increasing temperature, exhibiting the feature of metallic conduction. In addition, the calculated resistance temperature coefficient is equal to that of the 10–30 nm diameter Ni nanowire, further indicating that the nanoscale Ni conductive bridge is the physical origin of the observed conductive filaments. The resistive switching characteristics and the conductive filament's component of Ni/ZrO2/Pt device are consistent with the characteristics of the typical solid-electrolyte-based resistive random access memory. Therefore, aside from Cu and Ag, Ni can also be used as an oxidizable electrode material for resistive random access memory applications.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    Online Resource
    Online Resource
    AIP Publishing ; 2012
    In:  Applied Physics Letters Vol. 101, No. 18 ( 2012-10-29)
    In: Applied Physics Letters, AIP Publishing, Vol. 101, No. 18 ( 2012-10-29)
    Abstract: Nano-scale surface evaporation of SiO2 nanodroplets from a volcano-shaped tip (tip diameter d ∼ 20 nm to 70 nm) was observed directly using an in situ transmission electron microscopy method. Au nanoparticles, those precipitated in the SiO2 matrix after an Au catalyzed growth, diffused and pinned onto the evaporation surface, which induced blocked evaporation dynamics. Our observations provide direct evidences of blocked evaporation dynamics caused by small-sized nanoparticles at the nanometer scale.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2012
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 6
    In: Journal of Applied Physics, AIP Publishing, Vol. 111, No. 9 ( 2012-05-01)
    Abstract: Molecular dynamics (MD) simulations based on the Tersoff potential have been developed to study the laser-induced crystallization of amorphous silicon (a-Si) film with ultrathin thickness to form size-controllable Si nano-dots. The influences of laser fluence and a-Si film thickness on the crystallization process were discussed. Classic nucleation theory was used to explain the results of the MD simulations. The constrain effect of a-Si films thickness on the formation of Si nano-dots was evaluated accordingly.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2012
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 7
    In: Physics of Plasmas, AIP Publishing, Vol. 28, No. 8 ( 2021-08-01)
    Abstract: A reproducible, quasi-stationary edge localized mode (ELM)-suppressed scenario was obtained over a wide range of plasma parameters by continuous injection of boron (B) powder into an upper-single null discharge in the experimental advanced superconducting tokamak [Sun et al., Nucl. Fusion 61, 014002 (2021)]. This powder-induced ELM-absent regime is associated with an edge harmonic mode (EHM) that provides continuous particle exhaust to maintain constant density without confinement degradation and impurity accumulation, the latter of which is often observed in ELM-free regimes. A flow rate threshold of B powder injection, leading to a threshold intensity of the EHM, is necessary for full ELM suppression. The fundamental harmonic of the EHM exhibits a toroidal mode number n = 1. The mode is observable in the entire poloidal cross section with a peak near the upper X-point in an upper-single null configuration. The EHM spans radially across the pedestal and scrape-off layer, peaking inside the separatrix. The EHM appears to be insensitive to q95, heating power, plasma toroidal rotation, and pedestal collisionality.
    Type of Medium: Online Resource
    ISSN: 1070-664X , 1089-7674
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 1472746-8
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  • 8
    In: Applied Physics Letters, AIP Publishing, Vol. 72, No. 17 ( 1998-04-27), p. 2126-2128
    Abstract: Fourier transform infrared spectroscopy measurements have been carried out on liquid-encapsulated Czochralski-grown undoped InP wafers, which reproducibly become semi-insulating upon annealing in an ambient of phosphorus at 800–900 °C. The measurements reveal a high concentration of hydrogen complexes in the form VInH4 existing in the material before annealing in agreement with recent experimental studies. It is argued that the dominant and essential process producing the semi-insulating behavior is the compensation produced by an EL2-like deep donor phosphorus antisite defect, which is formed by the dissociation of the hydrogen complexes during the process of annealing. The deep donor compensates acceptors, the majority of which are shallow residual acceptor impurities and deep hydrogen associated VIn and isolated VIn levels, produced at the first stage of the dissociation of the VInH4 complex. The high concentration of indium vacancies produced by the dissociation are the precursor of the EL2-like phosphorus antisite. These results show the importance of hydrogen on the electrical properties of InP and indicate that this largely results from low formation energy of the complex VInH4 in comparison with that of an isolated VIn.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 211245-0
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  • 9
    Online Resource
    Online Resource
    AIP Publishing ; 1998
    In:  Journal of Applied Physics Vol. 84, No. 4 ( 1998-08-15), p. 2355-2357
    In: Journal of Applied Physics, AIP Publishing, Vol. 84, No. 4 ( 1998-08-15), p. 2355-2357
    Abstract: The distribution profiles of Ga and Al near the interface of the n-GaN/sapphire system were measured by x-ray energy dispersive spectroscopy (XEDS). The results are obtained by the corrected XED spectra. First, the gallium diffusing into the sapphire substrate obeys the law of remainder probability function. The gallium diffusion coefficient DGa=2.30×10−13 cm2 s−1 was calculated by theoretical fitting. Second, the diffusion is associated with the GaN growth process at high temperature. Compared to the diffusion of Ga into the sapphire substrate, much less Al antidiffusion from the substrate to the GaN film, with diffusion coefficient DAl approximately equal to 4.8×10−15 cm2 s−1, was observed in the film.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 10
    In: Journal of Applied Physics, AIP Publishing, Vol. 86, No. 2 ( 1999-07-15), p. 951-955
    Abstract: As-grown undoped n-type semiconducting and annealed undoped semi-insulating (SI) liquid encapsulated Czochralski (LEC) InP has been studied by temperature dependent Hall measurement, photoluminescence spectroscopy, infrared absorption, and photocurrent spectroscopy. P-type conduction SI InP can frequently be obtained by annealing undoped LEC InP. This is caused by a high concentration of thermally induced native acceptor defects. In some cases, it can be shown that the thermally induced n-type SI property of undoped LEC InP is caused by a midgap donor compensating for the net shallow acceptors. The midgap donor is proposed to be a phosphorus antisite related defect. Traps in annealed SI InP have been detected by photocurrent spectroscopy and have been compared with reported results. The mechanisms of defect formation are discussed.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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