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  • AIP Publishing  (209)
  • 1
    Online Resource
    Online Resource
    Experimental integration of quantum key distribution and gigabit-capable passive optical network
    AIP Publishing ; 2018
    In:  Journal of Applied Physics Vol. 123, No. 4 ( 2018-01-28)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 123, No. 4 ( 2018-01-28)
    Abstract: Quantum key distribution (QKD) ensures information-theoretic security for the distribution of random bits between two remote parties. To extend QKD applications to fiber-to-the-home optical communications, such as gigabit-capable passive optical networks (GPONs), an effective method is the use of wavelength-division multiplexing. However, the Raman scattering noise from intensive classical traffic and the huge loss introduced by the beam splitter in a GPON severely limits the performance of QKD. Here, we demonstrate the integration of QKD and a commercial GPON system with fiber lengths up to 14 km, in which the maximum splitting ratio of the beam splitter reaches 1:64. By placing the QKD transmitter on the optical line terminal side, we reduce the Raman noise collected at the QKD receiver. Using a bypass structure, the loss of the beam splitter is circumvented effectively. Our results pave the way to extending the applications of QKD to last-mile communications.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.5003342
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 2
    Online Resource
    Online Resource
    Observation of enhanced pedestal turbulence during ELM mitigation with resonant magnetic perturbation on EAST
    AIP Publishing ; 2021
    In:  AIP Advances Vol. 11, No. 7 ( 2021-07-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 11, No. 7 ( 2021-07-01)
    Abstract: Edge localized mode (ELM) mitigation accompanied by density pump-out has been achieved during the application of resonant magnetic perturbation (RMP) with a toroidal mode number of n = 4 on EAST recently. The mean ELM frequency increases by a factor of 2.7 from 86 to 235 Hz with a decreased reduction in ELM loss. The evolution of pedestal electron density measured by a profile reflectometer before and after turning on the RMP current is presented. Both the pedestal density and density gradient show a decrease with application of RMP. The density fluctuation in the pedestal region has been measured by an O-mode fluctuation reflectometer. The broadband density fluctuation with a frequency range of 20–115 kHz is enhanced at the later period of the inter-ELM phase during ELM mitigation. This phenomenon is also observed for magnetic fluctuation measured by magnetic probes mounted in the vacuum vessel. A further study shows that the enhanced broadband fluctuations lead to a decrease in the growth rate of the pedestal density and an increase in divert or particle flux. This result implies that these enhanced broadband fluctuations could lead to an enhancement of outward particle transport. The possible roles of the enhanced fluctuations observed in ELM mitigation are also discussed.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/5.0056082
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 2583909-3
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  • 3
    Online Resource
    Online Resource
    SPHydro: Promoting smoothed particle hydrodynamics method toward extensive applications in ocean engineering
    AIP Publishing ; 2023
    In:  Physics of Fluids Vol. 35, No. 1 ( 2023-01-01)
    Details
    In: Physics of Fluids, AIP Publishing, Vol. 35, No. 1 ( 2023-01-01)
    Abstract: This paper aims at presenting a general-purpose-oriented and fully parallelized meshless framework to simulate complex Fluid–Structure Interaction (FSI) problems in ocean engineering. In this framework, a Weakly Compressible Smoothed Particle Hydrodynamics (WCSPH) solver is combined with several advanced pre- and post-processing techniques. Based on the framework, we have been developing our in-house WCSPH-FSI package named SPHydro for solving hydrodynamic problems involving complex FSI processes in an accurate, efficient, and convenient manner. Three benchmarks are performed to qualitatively and quantitatively validate the accuracy and convergence of SPHydro. In addition, several practical applications are also provided to further highlight the generality and applicability of SPHydro in ocean engineering simulations. It is demonstrated that SPHydro holds satisfactory performance in solving complex FSI problems in ocean engineering and that the present framework can be further developed to tackle more complex FSI problems for general engineering applications due to its high flexibility and extensibility.
    Type of Medium: Online Resource
    ISSN: 1070-6631 , 1089-7666
    URL: Article
    DOI: 10.1063/5.0133782
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 1472743-2
    detail.hit.zdb_id: 241528-8
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  • 4
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    Directly revealing the electrical annealing of nanoscale conductive networks with solid spins
    AIP Publishing ; 2023
    In:  Applied Physics Letters Vol. 122, No. 10 ( 2023-03-06)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 122, No. 10 ( 2023-03-06)
    Abstract: Complex electrical structures composed of nanomaterials are widely studied in the research of nanoelectronics. Characterizing the current distribution is important to understand the current conducting mechanism and optimize the device's design. In this work, we employed the nitrogen vacancy centers in diamond as quantum sensors to directly and noninvasively monitor currents in nanowire networks. The sub-micrometer magnetic field imaging was achieved by injecting microwave current into networks and detecting the magnetic resonate spins' population, revealing the internal current paths involved in electrical conduction during electrical annealing. The establishment, breakdown, and reform of current paths were imaged in detail, which are difficult to realize through conventional methods. The mechanism of resistance change and relocating of current pathways was subsequently analyzed. This work demonstrates that a diamond-based quantum microscope is a useful tool to unveil the nanoscale conducting properties of complex conductive networks and guide the design for potential applications.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0138216
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
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    Enhancing mid-infrared spectral response at the LaAlO3/SrTiO3 interface by magnetic field
    AIP Publishing ; 2014
    In:  Applied Physics Letters Vol. 105, No. 24 ( 2014-12-15)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 105, No. 24 ( 2014-12-15)
    Abstract: Many unexpected properties have been found in the LaAlO3/SrTiO3 heterostructure, but the interaction of the many ground states at its interface remains unclear. Here, we demonstrate an optical property of this n-type heterostructure where the mid-infrared spectral responsivity at the interface is enhanced by an external magnetic field. The field intensity ranged from 0.8 to 6 kOe at a low temperature (19 K) as measured with our spectral response measurement system. Two spectral peaks related to the spin-orbit coupling effect were also observed at wavelengths 2400 nm and 3700 nm. The intriguing phenomena relate to changes in the crystallographic structure and subband structure at the interface.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4904997
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 6
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    Online Resource
    Investigating the size effect on the electrical conductivity at nanoscale with solid spins
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 121, No. 1 ( 2022-07-04)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 121, No. 1 ( 2022-07-04)
    Abstract: With the miniaturization of electrical components at nanoscale, the impact of dimension and shape on the electrical properties of the devices plays an important role in the applications. In this work, we used an ensemble of nitrogen-vacancy (NV) centers in diamond to noninvasively investigate the size effect on electric conductivity at nanoscale. The magnetic noise originated from the random movement of electrons in conductors, which is related to the conductivity, was detected by recording the spin relaxation of NV centers. The results indicate that the conductivity increases with the size of devices at the scale of electron mean free path. By further imaging the magnetic noise of the metallic structure with discontinuous thickness, we demonstrated that the spatial distribution of conductance at nanoscale can be revealed with high density NV center arrays. The results can help to understand the electron transport in nanomaterials. This technique can be used to optimize the design of nanoscale electrical devices.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0099454
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 7
    Online Resource
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    Ohmic contacts in MXene/MoSi2N4 heterojunctions
    AIP Publishing ; 2023
    In:  Applied Physics Letters Vol. 123, No. 2 ( 2023-07-10)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 123, No. 2 ( 2023-07-10)
    Abstract: Efficient Ohmic contacts are highly preferred in metal/semiconductor (M/S) junctions to achieve the exceptional intrinsic characteristics of the two-dimensional (2D) semiconductor channel. However, due to the strong Fermi level pinning effect, it is difficult to predict the Schottky barrier heights of heterojunctions, especially those between the M/S electrode and the channel region (i.e., the lateral Schottky barrier heights), which severely hampers the rational design of Ohmic contact. Herein, by using first-principles quantum transport simulations, it is found that the difference between the intrinsic band edges of pristine MoSi2N4 and the work function of pristine MXenes plays a major role in the Schottky barrier heights of vertical contacts. Furthermore, phase diagrams of Schottky barrier heights dependent on metal work function are established, which can facilitate the screening of Ohmic contacts. By selecting nine MXene/MoSi2N4 heterojunctions as demos, it is found that W3N2(OH)2 and V2C(OH)2 form n-type Ohmic contacts to MoSi2N4 in both vertical and lateral directions with 100% tunneling probabilities due to their ultralow work functions, while p-type Ohmic contacts are formed between MoSi2N4 and V3C2O2, V4C3O2, or Ti4N3O2 due to their relatively large work functions. Our findings not only demonstrate great potential of fabricating coherent dopant-free all-2D devices based on MXene/MoSi2N4 contacts but also more importantly deliver a general strategy for fast screening efficient Ohmic contacts.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0155310
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 8
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    Publisher's Note: “Two-terminal terahertz detectors based on AlGaN/GaN high-electron-mobility transistors” [Appl. Phys. Lett. 115 , 111101 (2019)]
    AIP Publishing ; 2019
    In:  Applied Physics Letters Vol. 115, No. 15 ( 2019-10-07)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 115, No. 15 ( 2019-10-07)
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.5129381
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 9
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    A low-power and high-sensitivity magnetic field sensor based on converse magnetoelectric effect
    AIP Publishing ; 2019
    In:  Applied Physics Letters Vol. 115, No. 16 ( 2019-10-14)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 115, No. 16 ( 2019-10-14)
    Abstract: Tremendous progress has been made in boosting the realization of magnetoelectric (ME) magnetometers based on the direct ME effect (DME) for bulk ME laminates. In this work, we studied the potential of an electrically driven bulk magnetic field sensor based on the converse ME effect (CME). Starting from a discussion about the dependence of the induced voltage from the pickup coil on coil parameters and the CME coupling process, we then experimentally measured the optimized bias field in the off resonance region and observed the double-peak phenomenon that occurred within the resonance window. More importantly, the optimization with respect to the sample's dimension, excitation voltage, and frequency was conducted to improve the sensing capability for low-frequency magnetic fields. It was experimentally found that a limit of detection (LoD) of ∼115 pT for a magnetic field of 10 Hz and ∼300 pT for a magnetic field of 1 Hz was achieved when exciting the ME laminate at 1 V without any bias field. In this case, the power consumption for the ME laminate is only 0.56 mW, which is much lower compared to tens of milliwatts (10–100 mW) for optically pumped or flux gate sensors (excluding the power consumption from the electronics) and also shows advantages over conventional ME magnetic field sensors based on DME with a current pump.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.5122774
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 10
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    Smaller antenna-gate gap for higher sensitivity of GaN/AlGaN HEMT terahertz detectors
    AIP Publishing ; 2020
    In:  Applied Physics Letters Vol. 116, No. 16 ( 2020-04-20)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 116, No. 16 ( 2020-04-20)
    Abstract: We report an attempt to improve the sensitivity of terahertz detection based on self-mixing in antenna-coupled field-effect transistors by enhancing the field-effect factor and the antenna factor with a reduced gate length and a reduced antenna-gate gap, respectively. An optical noise equivalent power (NEP) of 3.7 pW/Hz at 0.65 THz was achieved in a GaN/AlGaN high-electron-mobility transistor (HEMT) with a gate length of 300 nm and an antenna-gate gap of 200 nm at room temperature. It was found that the antenna factor was inversely proportional to the antenna-gate gap, and the responses upon coherent/incoherent terahertz irradiation were well described by the self-mixing model. To fill the NEP gap of 0.1−1 pW/Hz between room-temperature and cryogenic detectors by HEMT-based detectors at room temperature, impedance match needs to be carefully considered.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.5142436
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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