In:
Journal of Applied Physics, AIP Publishing, Vol. 114, No. 8 ( 2013-08-28)
Abstract:
The Au/Hg3In2Te6 interface was systematically investigated by synchrotron radiation photoemission spectroscopy (SRPES). Before the Au film prepared, the effects of the Ar+ ion etching process on elements and chemical bonding of the Hg3In2Te6 surface were studied first. The electronic structure and chemical reaction at the interface region with Au coverage ranging from 0.37 to 25 monolayers (ML) were also studied by exciting Te 4d, In 4d, and Au 4f core levels, respectively. Meanwhile, the growth mode of Au at MIT surface was confirmed to be the Volmer-Weber (VW) mode through the attenuation of Te 4d and In 4d core level signal strength. Moreover, chemical reactions between Au and Te with the product of AuTe2 were found at the Au/Hg3In2Te6 interface when Au deposition reached 0.72 ML. In addition, through the decomposition of Te 4d core level peaks at 25 ML of Au deposition, a re-bonding process of Hg-Te was found at the interface area. Finally, the interface formation process was summarized in detail.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2013
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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