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  • AIP Publishing  (131)
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  • AIP Publishing  (131)
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  • 1
    Online Resource
    Online Resource
    Experimental evidences of topological surface states of β-Ag2Te
    AIP Publishing ; 2013
    In:  AIP Advances Vol. 3, No. 3 ( 2013-03-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 3, No. 3 ( 2013-03-01)
    Abstract: We present evidence of topological surface states in β-Ag2Te through first-principles calculations, periodic quantum interference effect and ambipolar electric field effect in single crystalline nanoribbon. Our first-principles calculations show that β-Ag2Te is a topological insulator with a gapless Dirac cone with strong anisotropy. To experimentally probe the topological surface state, we synthesized high quality β-Ag2Te nanoribbons and performed electron transport measurements. The coexistence of pronounced Aharonov-Bohm oscillations and weak Altshuler-Aronov-Spivak oscillations clearly demonstrates coherent electron transport around the perimeter of β-Ag2Te nanoribbon and therefore the existence of topological surface states, which is further supported by the ambipolar electric field effect for devices fabricated by β-Ag2Te nanoribbons. The experimental evidences of topological surface states and the theoretically predicted anisotropic Dirac cone of β-Ag2Te suggest that the material may be a promising candidate of topological insulator for fundamental study and future spintronic devices.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.4795735
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 2583909-3
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  • 2
    Online Resource
    Online Resource
    Reduced graphene oxide grafted on p-Si photocathode as a multifunctional interlayer for enhanced solar hydrogen production
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 121, No. 21 ( 2022-11-21)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 121, No. 21 ( 2022-11-21)
    Abstract: Photoelectrochemical (PEC) water splitting has been intensively studied as a sustainable approach to directly convert intermittent solar energy into storable hydrogen fuels. Its practical application, however, has been tethered by the trade-off between photoelectrode efficiency and stability. Herein, this work demonstrates a facile strategy to design highly efficient and stable Si photocathodes by utilizing the reduced graphene oxide (rGO) as a multifunctional interlayer to bridge the Pt catalysts and p-Si. The covalently grafted rGO layer forms a Schottky junction with p-Si allowing effective charge carrier extraction required for high efficiency, and, simultaneously, protects the Si surface and anchors Pt catalysts with enhanced stability. Consequently, the as-fabricated Pt/rGO/p-Si photocathodes exhibit an impressive PEC performance under simulated AM1.5G illumination with a high applied bias photon-to-current efficiency (ABPE) of 4.9% and stability of over 110 hours, outperforming the Pt/p-Si control sample and state-of-the-art p-Si based photocathodes. In summary, this work offers a viable path for developing high-performance solar-to-fuel conversion devices in the future.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0121678
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    First-principles calculation of N:H codoping effect on energy gap narrowing of TiO2
    AIP Publishing ; 2007
    In:  Applied Physics Letters Vol. 90, No. 17 ( 2007-04-23)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 90, No. 17 ( 2007-04-23)
    Abstract: The energy band structures and density of states for N-doped and N:H-doped anatase TiO2 are calculated based on the first-principles density-functional theory. For N-doped TiO2, there appear two isolated states above the top of the valence band and the band gap narrowing is very small. With the same nitrogen dopant concentration, N:H doping yields a significant band gap narrowing. The calculated results support our experimental data that N:H-doped TiO2 exhibited higher visible-light photocatalytic efficiency than the N-doped one.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2731707
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2007
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    Online Resource
    Online Resource
    Enhanced solar hydrogen production by manipulating the spatial distribution of Pt catalyst onto Si micro-pyramid arrays
    AIP Publishing ; 2023
    In:  Applied Physics Letters Vol. 122, No. 19 ( 2023-05-09)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 122, No. 19 ( 2023-05-09)
    Abstract: Monolithic integrated photoelectrochemical devices consisting of semiconductors and co-catalysts have always been restricted by the trade-off between light absorption and catalytic activity upon frontside illumination. Herein, we proposed a facile strategy to spatio-selectively deposit Pt catalyst on the top of p-Si micro-pyramids, which not only enables substantial light absorption but also immensely boosts the charge transport and mass transfer. With the help of dark-field microscopy and microscopic photocurrent mapping, it is revealed that the top of p-Si micro-pyramids is an ideal electron-migration channel for efficient charge carrier extraction. This spatio-selective strategy affords the Si photocathode to achieve a high applied bias photon-to-current efficiency of 3.84% for hydrogen production, significantly greater than the control sample with the same amount of Pt catalyst deposited uniformly on the same substrates (0.04%).
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0141701
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    Online Resource
    Online Resource
    Optoelectronic properties of quasi-two-dimensional perovskite light-emitting diodes via poly(9-vinylcarbazole) interlayer modification
    AIP Publishing ; 2023
    In:  AIP Advances Vol. 13, No. 6 ( 2023-06-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 13, No. 6 ( 2023-06-01)
    Abstract: Perovskite light-emitting diodes (PeLEDs) have attracted much attention due to their excellent performance. In this work, phenylethylamine bromide (PEABr) was employed to modify perovskite phases, while Poly(9-vinylcarbazole) (PVK) was added as a hole transport layer between perovskite and PEDOT:PSS to engineer the device structure, which is predicted to improve the optoelectronic performance of PeLEDs synergistically. The doping of PEABr in MAPbBr3 can improve the radiative recombination of the emission layer through the formation of two-dimensional perovskite phases and modified film morphology. When the ratio of MAPbBr3:PEABr is 1:0.25, the maximum luminance of the optimal device increased from 80 to 9000 cd/m2 and the maximum external quantum efficiency increased from 0.02% to 1.63% compared with the control device without PEABr doping. In addition, the hole injection ability of the device is further improved by adding PVK as the hole transport layer. The introduction of PVK can also facilitate the interface modification via surface defect passivation. When the PVK concentration is 10 mg/ml, the maximum current efficiency and external quantum efficiency of the optimal device are increased to 13.70 cd/A and 2.70%, respectively. These findings can provide a basis for the enhanced performance of PeLEDs.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/5.0153869
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 2583909-3
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  • 6
    Online Resource
    Online Resource
    Megahertz high voltage pulse generator suitable for capacitive load
    AIP Publishing ; 2017
    In:  AIP Advances Vol. 7, No. 11 ( 2017-11-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 7, No. 11 ( 2017-11-01)
    Abstract: A high voltage pulse generator is presented to drive Pockels cell. The Pockels cell behaves like a capacitor which slows the rise/fall time of the pulse and restrains the repetition rate of the generator. To drive the Pockels cell applied in quantum communication system, it requires about 1 MHz repetition rate with the rise/fall time of the pulse less than 50 ns, adjustable amplitude up to 800 V and an adjustable duration. With the assistance of self-designed transformers, the circuits is simplified that a pair of high current radio frequency (RF) MOSFET drivers are employed to switch the power MOSFETs at a high speed, and the power MOSFETs shape the final output pulse with the requirements. From the tests, the generator can produce 800 V square pulses continously at 1 MHz rate with 46 ns in risetime and 31 ns in falltime when driving a 51 pF capacitive load. And the generator is now used to drive Pockels cell for encoding the polarization of photons.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.5006827
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 2583909-3
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  • 7
    Online Resource
    Online Resource
    Direct observation of the magnetic domain evolution stimulated by temperature and magnetic field in PrMnGeSi alloy
    AIP Publishing ; 2018
    In:  AIP Advances Vol. 8, No. 5 ( 2018-05-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 8, No. 5 ( 2018-05-01)
    Abstract: The magnetic domain evolution behavior under external field stimuli of temperature and magnetic field in PrMn2Ge0.4Si1.6 compound is investigated using Lorentz transmission electron microscopy. A spontaneous 180° magnetic domain is observed at room temperature and it changes with temperature. Dynamic magnetization process is related to the rotation of magnetic moments, resulting in the transforming of magnetic domains from 180° type to a uniform ferromagnetic state with almost no pinning effects under the in-plane magnetic field at room temperature. X-ray powder diffraction is performed on PrMn2Ge0.4Si1.6 at different temperatures to study the temperature dependence of crystal structure and lattice parameter.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.5006385
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 2583909-3
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  • 8
    Online Resource
    Online Resource
    Symmetric and anti-symmetric magnetic resonances in double-triangle nanoparticle arrays fabricated via angle-resolved nanosphere lithography
    AIP Publishing ; 2011
    In:  AIP Advances Vol. 1, No. 4 ( 2011-12-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 1, No. 4 ( 2011-12-01)
    Abstract: We report experimentally that for a particular high-symmetry planar periodic arrangement of metal double-triangle nanoparticle arrays fabricated via angle resolved nanosphere lithography, both anti-symmetric and symmetric magnetic resonances can be explicitly excited at off-normal incidence. Further, we demonstrate that the underlying mechanism for the formation of these two modes is a result of direct interactions with the incident electric and magnetic fields, respectively. As a consequence, with increasing the incident angle there is a relatively small blue-shift in the transmission for the electric-field induced anti-symmetric mode, while a remarkable red-shift is observed for the magnetic-field induced symmetric mode.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.3655439
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2011
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  • 9
    Online Resource
    Online Resource
    Magnetic epoxy nanocomposites with superparamagnetic MnFe2O4 nanoparticles
    AIP Publishing ; 2015
    In:  AIP Advances Vol. 5, No. 9 ( 2015-09-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 5, No. 9 ( 2015-09-01)
    Abstract: Manganese iron oxide (MnFe2O4) nanoparticles successfully served as nanofillers for obtaining magnetic epoxy nanocomposites. The viscosities of MnFe2O4/epoxy resin liquid suspensions increased with increasing the nanoparticles loading except the suspension with 5.0 and 1.0 wt% loading, whose viscosities were lower than that of pure epoxy. The introduction of MnFe2O4 nanoparticles showed a lower onset decomposition temperature and glass transition temperature (Tg), which decreased with increasing the nanoparticles loading. The storage modulus and tensile strength of 1.0 wt% MnFe2O4/epoxy were a little higher than that of pure epoxy. The coercivity of MnFe2O4/epoxy nanocomposites with 5.0 wt% (44.7 Oe) and 10.0 wt% (43.9 Oe) displayed much higher than that of pure MnFe2O4 nanoparticles (14.94 Oe). The magnetic moment (m) of nanocomposites (1.354 μB for 10 wt% MnFe2O4/epoxy) are higher than that of pure MnFe2O4 nanoparticles (1.244 μB). The increased real permittivity observed in the nanocomposites was attributed to the interfacial polarization. The intrinsic permittivity of the MnFe2O4 nanoparticles was also calculated.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.4932381
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 2583909-3
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  • 10
    Online Resource
    Online Resource
    GeTe ultrathin film based phase-change memory with extreme thermal stability, fast SET speed, and low RESET power energy
    AIP Publishing ; 2023
    In:  AIP Advances Vol. 13, No. 3 ( 2023-03-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 13, No. 3 ( 2023-03-01)
    Abstract: We designed the phase-change memory (PCM) cell based on ultrathin GeTe film (∼10 nm) and homemade nanoscale electrode filling craft to improve data retention ability and reduce programming energy, respectively. It was found that the temperature for ten years’ data retention of this ultrathin GeTe film is 160 ± 32.8 °C, which is much higher than that of conventional Ge2Sb2Te5 (GST, 83 ± 20.6 °C) film. Benefit to the nature of fragile-to-strong crossover behavior in GeTe supercooled liquids that was confined in a two-dimension structure, a fast SET speed of 6 ns is also detected in this ultrathin GeTe PCM. Moreover, the RESET power consumption of this ultrathin GeTe PCM is measured as 1.8 ± 0.5 nJ, and it is much lower than that of GST PCM (16.5 ± 1.5 nJ), which is attributed to the nanoscale electrode of the devices. The above-mentioned improvements enable the application of ultrathin GeTe PCM in neuromorphic computing.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/5.0138286
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 2583909-3
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