In:
Journal of Applied Physics, AIP Publishing, Vol. 126, No. 15 ( 2019-10-21)
Abstract:
Tuning of the photoluminescence emission over a wider range of optical telecommunication wavelength (1.38 μm–1.68 μm) has been achieved by employing a GaAs1 − xSbx capping layer to the strain coupled bilayer InAs quantum dot (QD) heterostructures. It is shown that the modulation of strain between the two dot layers through variation in Sb-content and thickness of the capping layer strongly influence the dot size. The band alignment transformation from type-I to type-II is observed for high Sb-content in the capping layers. In addition, the carrier lifetime is improved by a factor of three in the QD heterostructures having type-II band alignment. This, we believe, is of importance for optoelectronic device applications.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2019
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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