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  • AIP Publishing  (4)
  • 1
    Online Resource
    Online Resource
    Fabrication of bioinspired omnidirectional and gapless microlens array for wide field-of-view detections
    AIP Publishing ; 2012
    In:  Applied Physics Letters Vol. 100, No. 13 ( 2012-03-26)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 100, No. 13 ( 2012-03-26)
    Abstract: Microlens arrays on curvilinear surfaces are highly desirable for wide field-of-view imaging and sensing systems. However, it is technically challenging to fabricate these structures. This letter reports a simple method to machine close-packed microlenses on curvilinear surfaces as inspired by the insect eyes, which involves a femtosecond-laser-based microfabrication and a thermomechanical bending process. Over 7600 hexagonal-shaped microlenses with a diameter of 50 μm were fabricated on a hemispherical poly (methyl methacrylate) shell, which is similar to the compound eyes of insects. The optical performances of the microlens array were demonstrated by the abilities of high-resolution imaging and large view-angle focusing.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.3696019
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2012
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Two-dimensional electron and hole gases in In x Ga1 − x N/Al y Ga1 − y N/GaN heterostructure for enhancement mode operation
    AIP Publishing ; 2014
    In:  Journal of Applied Physics Vol. 116, No. 5 ( 2014-08-07)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 116, No. 5 ( 2014-08-07)
    Abstract: In this paper, a numerical study of InxGa1−xN/AlyGa1−yN/GaN heterostructure is presented. The dependence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) sheet densities on variables, such as InxGa1−xN layer thickness and In content, and AlyGa1−yN barrier layer thickness and Al content, are systematically investigated. The effect of P-type doping in InxGa1−xN on 2DEG and 2DHG sheet densities in this heterostructure is also studied. It is shown that the strong reverse electric field in InxGa1−xN cap layer contributes to the depletion of 2DEG at the AlyGa1-yN/GaN interface. When InxGa1−xN layer thickness and In content increases, 2DEG sheet density decreases significantly. P-type doping shows less influence on 2DEG compared to the polarization electric field in InxGa1−xN layer. In addition, there exist critical values for all the variables beyond which 2DHG appears at the interface of InxGa1−xN/AlyGa1−yN. Once 2DHG appears, it will prevent 2DEG from being further depleted. With proper design of AlyGa1−yN layer, the coexistence of 2DEG and 2DHG in InxGa1−xN/AlyGa1−yN/GaN structure can be avoided, showing that this structure has great potential in the fabrication of enhancement mode (E-mode) high electron mobility transistors.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4891732
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
    Online Resource
    Online Resource
    THz wave propagation in the stagnation region of reentry plasma sheath
    AIP Publishing ; 2021
    In:  AIP Advances Vol. 11, No. 6 ( 2021-06-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 11, No. 6 ( 2021-06-01)
    Abstract: By using two-dimensional particle-in-cell simulations, we demonstrate a terahertz (THz) wave propagating in the stagnation region of a reentry plasma sheath. When a THz wave propagates in the plasma sheath, the frequency blue shift is initiated as the wavelength is compressed. Attenuation is observed due to energy transfer from the THz wave to the plasma internal energy. Electrons are first accelerated mostly via oscillating in the electric field and partially via the wake field and then deliver their energies to the other particles via collisions. Detailed discussions show that increasing the intensity and frequency of the THz wave results in a higher transmission coefficient, which indicates that high power and high frequency methods are useful for communication blackout mitigation. This investigation of THz wave transmission in plasma will facilitate the mitigation of radio frequency blackout in spacecraft reentry in earth’s atmosphere communication.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/5.0049129
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 2583909-3
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  • 4
    Online Resource
    Online Resource
    Tunable density of two-dimensional electron gas in GaN-based heterostructures: The effects of buffer acceptor and channel width
    AIP Publishing ; 2013
    In:  Journal of Applied Physics Vol. 114, No. 15 ( 2013-10-21)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 114, No. 15 ( 2013-10-21)
    Abstract: This is a theoretical study of GaN-based heterostructures with unintentionally doped (UID) GaN channel layer and high-resistivity (HR) GaN buffer layer doped by deep acceptors. Self-consistent Schrödinger-Poisson (SP) numerical simulation shows that, by increasing the acceptor concentration in the HR buffer or narrowing the width of UID channel, the quantum confinement of two-dimensional electron gas (2DEG) is enhanced, while the sheet density of 2DEG is reduced. The tuning effect of 2DEG density is attributed to the depletion effect of negative space charges composed of ionized acceptors located in the region between the UID channel and the Fermi-level pinned region in the HR buffer. For the heterostructure without the UID channel, the 2DEG can be depleted as the acceptor concentration is beyond a critical value. However, by inserting a UID channel layer, the depletion effect of buffer acceptor on 2DEG density is reduced. To gain a further insight into the physics, a simple analytical model is developed, which reproduces well the results of SP simulation. By comparing our theoretical results with the experimental ones, a good agreement is reached, thus the validity of our model is verified.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4825318
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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