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  • AIP Publishing  (22)
  • 1
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2015
    In:  The Journal of Chemical Physics Vol. 143, No. 11 ( 2015-09-21)
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 143, No. 11 ( 2015-09-21)
    Kurzfassung: The relaxation processes of the xenon clusters subjected to multi-photon excitation by laser radiation with quantum energies significantly lower than the thresholds of excitation of atoms and ionization of clusters were studied. Results obtained by means of the photoelectron spectroscopy method showed that desorption processes of excited atoms play a significant role in the decay of two-photon excited xenon clusters. A number of excited states of xenon atoms formed during this process were discovered and identified.
    Materialart: Online-Ressource
    ISSN: 0021-9606 , 1089-7690
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2015
    ZDB Id: 3113-6
    ZDB Id: 1473050-9
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 2
    In: Physics of Plasmas, AIP Publishing, Vol. 28, No. 7 ( 2021-07-01)
    Kurzfassung: We study Alfvén eigenmodes (AEs) in the TJ-II heliac in hydrogen plasmas heated by hydrogen co-field neutral beam injector. Taking advantage of the unique TJ-II flexibility in a varying plasma current, we have observed strong variation of the AE frequency from fAE ∼ 30 to ∼220 kHz for selected modes. An advanced heavy-ion beam probe diagnostic determines the spatial location and internal amplitudes of the modes. The modes satisfy a local AE dispersion relation including the geodesic acoustic frequency that represents the lowest frequency of the mode. Linear MHD modeling with STELLGAP and FAR3D codes shows that the calculated temporal evolution of the mode frequency reproduces the observed maxima and minima at the same time intervals with a similar frequency range, and the radial profile peaks near the outer edge of the observed one.
    Materialart: Online-Ressource
    ISSN: 1070-664X , 1089-7674
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2021
    ZDB Id: 1472746-8
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 3
    In: Journal of Applied Physics, AIP Publishing, Vol. 114, No. 10 ( 2013-09-14)
    Kurzfassung: Fe2O3 nanoparticles with sizes ranging from 15 to 53 nm were synthesized by a modified sol-gel method. Maghemite particles as well as particles with admixture of maghemite and hematite were obtained and characterized by XRD, FTIR, UV-Vis photoacoustic and Mössbauer spectroscopy, TEM, and magnetic measurements. The size and hematite/maghemite ratio of the nanoparticles were controlled by changing the Fe:PVA (poly (vinyl alcohol)) monomeric unit ratio used in the medium reaction (1:6, 1:12, 1:18, and 1:24). The average size of the nanoparticles decreases, and the maghemite content increases with increasing PVA amount until 1:18 ratio. The maghemite and hematite nanoparticles showed cubic and hexagonal morphology, respectively. Direct band gap energy were 1.77 and 1.91 eV for A6 and A18 samples. Zero-field-cooling–field-cooling curves show that samples present superparamagnetic behavior. Maghemite-hematite phase transition and hematite Néel transition were observed near 700 K and 1015 K, respectively. Magnetization of the particles increases consistently with the increase in the amount of PVA used in the synthesis. Mössbauer spectra were adjusted with a hematite sextet and maghemite distribution for A6, A12, and A24 and with maghemite distribution for A18, in agreement with XRD results.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2013
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 4
    In: Applied Physics Letters, AIP Publishing, Vol. 109, No. 8 ( 2016-08-22)
    Kurzfassung: Ion implantation with high ion fluences is indispensable for successful use of germanium (Ge) in the next generation of electronic and photonic devices. However, Ge readily becomes porous after a moderate fluence implant (∼1×1015 ion cm−2) at room temperature, and for heavy ion species such as tin (Sn), holding the target at liquid nitrogen (LN2) temperature suppresses porosity formation only up to a fluence of 2×1016 ion cm−2. We show, using stylus profilometry and electron microscopy, that a nanometer scale capping layer of silicon dioxide significantly suppresses the development of the porous structure in Ge during a Sn− implant at a fluence of 4.5×1016 ion cm−2 at LN2 temperature. The significant loss of the implanted species through sputtering is also suppressed. The effectiveness of the capping layer in preventing porosity, as well as suppressing sputter removal of Ge, permits the attainment of an implanted Sn concentration in Ge of ∼15 at.%, which is about 2.5 times the maximum value previously attained. The crystallinity of the Ge-Sn layer following pulsed-laser-melting induced solidification is also greatly improved compared with that of uncapped material, thus opening up potential applications of the Ge-Sn alloy as a direct bandgap material fabricated by an ion beam synthesis technique.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2016
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 5
    In: Journal of Applied Physics, AIP Publishing, Vol. 113, No. 2 ( 2013-01-14)
    Kurzfassung: Intermediate band formation on silicon layers for solar cell applications was achieved by titanium implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the un-implanted substrate, was formed. In this work, we present for the first time electrical characterization results which show that recombination is suppressed when the Ti concentration is high enough to overcome the Mott limit, in agreement with the intermediate band theory. Clear differences have been observed between samples implanted with doses under or over the Mott limit. Samples implanted under the Mott limit have capacitance values much lower than the un-implanted ones as corresponds to a highly doped semiconductor Schottky junction. However, when the Mott limit is surpassed, the samples have much higher capacitance, revealing that the intermediate band is formed. The capacitance increasing is due to the big amount of charge trapped at the intermediate band, even at low temperatures. Ti deep levels have been measured by admittance spectroscopy. These deep levels are located at energies which vary from 0.20 to 0.28 eV below the conduction band for implantation doses in the range 1013-1014 at./cm2. For doses over the Mott limit, the implanted atoms become nonrecombinant. Capacitance voltage transient technique measurements prove that the fabricated devices consist of two-layers, in which the implanted layer and the substrate behave as an n+/n junction.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2013
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 6
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2018
    In:  The Journal of Chemical Physics Vol. 148, No. 19 ( 2018-05-21)
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 148, No. 19 ( 2018-05-21)
    Kurzfassung: Direct measurement of the rates of nonradiative relaxation processes in electronically excited xenon clusters was carried out. The clusters were created in a pulsed supersonic beam and two-photon excited by femtosecond laser pulses with a wavelength of 263 nm. The measurements were performed using the pump-probe method and electron spectroscopy. It is shown that relaxation of light clusters XeN (N & lt; 15) predominantly occurs by desorption of excited xenon atoms with a characteristic time constant of 3 ps. Heavier electronically excited clusters (N & gt; 10) vibrationally relax to the lowest electronically excited state at a rate of about 0.075 eV/ps. Multiply excited clusters are deactivated via energy exchange between excited centers with the ionization of one of them. The production of electrons in this process occurs with a delay of ∼4 ps from the pump pulse, and the process is completed in 10 ps.
    Materialart: Online-Ressource
    ISSN: 0021-9606 , 1089-7690
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2018
    ZDB Id: 3113-6
    ZDB Id: 1473050-9
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 7
    In: AIP Advances, AIP Publishing, Vol. 10, No. 7 ( 2020-07-01)
    Kurzfassung: Obtaining short-wavelength-infrared (SWIR; 1.4 μm–3.0 μm) room-temperature photodetection in a low-cost, group IV semiconductor is desirable for numerous applications. We demonstrate a non-equilibrium method for hyperdoping germanium with selenium or tellurium for dopant-mediated SWIR photodetection. By ion-implanting Se or Te into Ge wafers and restoring crystallinity with pulsed laser melting induced rapid solidification, we obtain single crystalline materials with peak Se and Te concentrations of 1020 cm−3 (104 times the solubility limits). These hyperdoped materials exhibit sub-bandgap absorption of light up to wavelengths of at least 3.0 μm, with their sub-bandgap optical absorption coefficients comparable to those of commercial SWIR photodetection materials. Although previous studies of Ge-based photodetectors have reported a sub-bandgap optoelectronic response only at low temperature, we report room-temperature sub-bandgap SWIR photodetection at wavelengths as long as 3.0 μm from rudimentary hyperdoped Ge:Se and Ge:Te photodetectors.
    Materialart: Online-Ressource
    ISSN: 2158-3226
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2020
    ZDB Id: 2583909-3
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 8
    In: Journal of Applied Physics, AIP Publishing, Vol. 119, No. 18 ( 2016-05-14)
    Kurzfassung: The germanium-tin (Ge1−xSnx) material system is expected to be a direct bandgap group IV semiconductor at a Sn content of 6.5−11 at. %. Such Sn concentrations can be realized by non-equilibrium deposition techniques such as molecular beam epitaxy or chemical vapour deposition. In this report, the combination of ion implantation and pulsed laser melting is demonstrated to be an alternative promising method to produce a highly Sn concentrated alloy with a good crystal quality. The structural properties of the alloys such as soluble Sn concentration, strain distribution, and crystal quality have been characterized by Rutherford backscattering spectrometry, Raman spectroscopy, x ray diffraction, and transmission electron microscopy. It is shown that it is possible to produce a high quality alloy with up to 6.2 at. %Sn. The optical properties and electronic band structure have been studied by spectroscopic ellipsometry. The introduction of substitutional Sn into Ge is shown to either induce a splitting between light and heavy hole subbands or lower the conduction band at the Γ valley. Limitations and possible solutions to introducing higher Sn content into Ge that is sufficient for a direct bandgap transition are also discussed.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2016
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 9
    In: Physics of Plasmas, AIP Publishing, Vol. 30, No. 7 ( 2023-07-01)
    Kurzfassung: Enhanced confinement is observed in neutral beam injector (NBI)-heated hydrogen discharges made in the stellarator TJ-II after the injection of a single cryogenic fuel pellet into the plasma core. In addition to the expected increase in electron density, ne, in the core after pellet injection (PI), the plasma diamagnetic energy content is seen to rise, with respect to similar discharges without PI, by up to 40%. Furthermore, the energy confinement time, τEdiag, as determined using a diamagnetic loop, is enhanced when compared to predictions obtained using the International Stellarator Scaling law [H. Yamada et al., Nucl. Fusion 45, 1684 (2005)] and the triple product, ne · Ti · τEdiag, exhibits a clear bifurcation point toward an improved confinement branch as compared to the branch product predicted by this scaling law. In general, once such a pellet-induced enhanced confinement (PiEC) phase has been established, it is characterized by steepened radial density gradients, by more negative plasma potential in the core, more negative radial electric fields, Er, across a broad plasma region, as well as by reductions in density and plasma potential fluctuations in the density gradient region. In addition, experimental observations show increased peaking of core radiation losses, this pointing to edge/core plasma decoupling. In parallel, neoclassical simulations of reference and PiEC plasmas predict increased particle and energy confinement times during a PiEC phase together with a more negative Er profile. Qualitative rather than quantitative agreement with experimental parameters is found, indicating that turbulence seems to play a significant role here. In summary, single cryogenic pellet injection facilitates the achievement of an enhanced operational regime that was previously not observed in NBI-heated discharges of the TJ-II.
    Materialart: Online-Ressource
    ISSN: 1070-664X , 1089-7674
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2023
    ZDB Id: 1472746-8
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 10
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2012
    In:  Journal of Applied Physics Vol. 111, No. 10 ( 2012-05-15)
    In: Journal of Applied Physics, AIP Publishing, Vol. 111, No. 10 ( 2012-05-15)
    Kurzfassung: NiFe2O4 and NiFe2O4-SiO2 nanoparticles were synthesized by a sol-gel method using citric acid as fuel, giving rise its combustion to the crystallization of the spinel phase. Different synthesis conditions were analyzed with the aim of obtaining stoichiometric NiFe2O4 nanoparticles. The spinel structure in the calcined nanoparticles (400 °C, 2 h) was evaluated by x-ray diffraction. Their nanometer size (mean diameters around 10–15 nm) was confirmed through electron microscopy (field emission scanning electron microscopy and transmission electron microscopy). Rietveld refinement indicates the existence of a small percentage of NiO and Fe3O4 phases and a certain degree of structural disorder. The main effect of the silica coating is to enhance the disorder effects and prevent the crystalline growth after post-annealing treatments. Due to the small particle size, the nanoparticles display characteristic superparamagnetic behaviour and surface effects associated to a spin-glass like state: i.e., reduction in the saturation magnetization values and splitting of the zero field cooled (ZFC)-field cooled (FC) high field magnetization curves. The fitting of the field dependence of the ZFC-FC irreversibility temperatures to the Almeida—Thouless equation confirms the spin-glass nature of the detected magnetic phenomena. Exchange bias effects (shifts in the FC hysteresis loops) detected below the estimated freezing temperature support the spin-glass nature of the spin disorder effects.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2012
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
    Standort Signatur Einschränkungen Verfügbarkeit
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