In:
Review of Scientific Instruments, AIP Publishing, Vol. 79, No. 2 ( 2008-02-01)
Abstract:
A proton beam irradiation system for the application of the MeV class proton beam, such as an implantation for a power semiconductor device and a smart-cut technology for a semiconductor production process, has been developed. This system consists of a negative ion source, an Einzel lens for a low energy beam transport, accelerating tubes, a gas stripper, a Cockroft-Walton high voltage power supply with 1MV, a vacuum pumping system, and a high pressure insulating gas system. The negative hydrogen ion source is based on TRIUMF’s design. Following the tandem accelerator, a pair of magnets is installed for raster scanning of the MeV proton beam to obtain a uniform irradiation pattern on the target. The system is 7m long from the ion source to the target and is optimized for the proton beam irradiation. The details of the system development will be described.
Type of Medium:
Online Resource
ISSN:
0034-6748
,
1089-7623
Language:
English
Publisher:
AIP Publishing
Publication Date:
2008
detail.hit.zdb_id:
209865-9
detail.hit.zdb_id:
1472905-2
SSG:
11
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