In:
Applied Physics Letters, AIP Publishing, Vol. 101, No. 10 ( 2012-09-03)
Abstract:
Resistive-switching and current conduction mechanisms have been studied in TiN/Ti/TiOx/HfOx/TiN resistive-switching random access memories (RRAMs). From I-V characteristics and temperature measurement, thermionic emission is found to be the most appropriate mechanism representing the dominant current conduction in all the bias regions and resistance states. Low-frequency noise power spectrum is measured to analyze accurately the conduction mechanism, which corroborates the thermionic-emission. Also, using the migration of oxygen ions depending on the polarity of the applied field, we propose the resistive-switching model of a double-layered RRAM to explain the unique resistive-switching characteristics.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2012
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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