GLORIA

GEOMAR Library Ocean Research Information Access

X

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Online Resource
    Online Resource
    Molecular simulation of pressure-driven fluid flow in nanoporous membranes
    AIP Publishing ; 2007
    In:  The Journal of Chemical Physics Vol. 127, No. 5 ( 2007-08-07)
    Details
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 127, No. 5 ( 2007-08-07)
    Abstract: An extended nonequilibrium molecular dynamics technique has been developed to investigate the transport properties of pressure-driven fluid flow in thin nanoporous membranes. Our simulation technique allows the simulation of the pressure-driven permeation of liquids through membranes while keeping a constant driving pressure using fluctuating walls. The flow of argon in the liquid state was simulated on applying an external pressure difference of 2.4×106Pa through the slitlike and cylindrical pores. The volume flux and velocity distribution in the membrane pores were examined as a function of pore size, along with the interaction with the pore walls, and these were compared with values estimated using the Hagen-Poiseuille flow. The calculated velocity strongly depends on the strength of the interaction between the fluid and the atoms in the wall when the pore size is approximately & lt;20σ. The calculated volume flux also shows a dependence on the interaction between the fluid and the atoms in the wall. The Hagen-Poiseuille law overestimates or underestimates the flux depending on the interaction. From the analysis of calculated results, a good linear correlation between the density of the fluid in the membrane pores and the deviation of the flux estimated from the Hagen-Poiseuille flow was found. This suggests that the flux deviation in nanopore from the Hagen-Poiseuille flow can be predicted based on the fluid density in the pores.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    URL: Article
    DOI: 10.1063/1.2749236
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2007
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 2
    Online Resource
    Online Resource
    Strain-enhanced topotactic hydrogen substitution for oxygen in SrTiO3 epitaxial thin film
    AIP Publishing ; 2018
    In:  Applied Physics Letters Vol. 113, No. 25 ( 2018-12-17)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 113, No. 25 ( 2018-12-17)
    Abstract: We investigated the effects of epitaxial strain on the anion composition, crystal structure, and electrical transport properties of topotactically hydrogen substituted SrTiOxHy epitaxial thin films grown on (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7(001) (LSAT), LaSrAlO4(001) (LSAO), and DyScO3(110) (DSO) substrates. Hydrogen substitution for oxygen (y ≈ 3 − x) was confirmed by X-ray diffraction measurements, elastic recoil detection analysis, and energy dispersive X-ray spectroscopy. Tensile-strained SrTiOxHy/DSO films exhibited a higher hydrogen content (y = 0.87) than compressive-strained SrTiOxHy/LSAT films (y = 0.20) and almost relaxed SrTiOxHy/LSAO films (y = 0.56) after a reaction with CaH2 at 500 °C for 72 h, probably owing to enhanced oxygen diffusion under tensile strain. Metallic conduction was observed in the SrTiOxHy thin films with a low hydrogen content (y = 0.10 and 0.16 on LSAT, y = 0.20 on LSAO, and y = 0.40 on DSO), while further hydrogen substitution (y = 0.56 on LSAO and y = 0.57 and 0.87 on DSO) induced insulating behavior at low temperatures. Furthermore, comparing SrTiOxHy/LSAO (y = 0.56) and SrTiOxHy/DSO (y = 0.57) films revealed that the carrier activation ratio is drastically reduced by tensile strain. These results demonstrate the potential to strain-engineer chemical and physical properties of transition metal oxyhydride thin films.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.5057370
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 3
    Online Resource
    Online Resource
    Transparent conductivity of fluorine-doped anatase TiO2 epitaxial thin films
    AIP Publishing ; 2012
    In:  Journal of Applied Physics Vol. 111, No. 9 ( 2012-05-01)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 111, No. 9 ( 2012-05-01)
    Abstract: Transparent conductive anatase TiO2−xFx(F:TiO2) epitaxial thin films were fabricated by reactive pulsed laser deposition with a solid fluorine source. F-doping as high as 1.6 × 1021 cm−3 (TiO1.95F0.05) was achieved under optimal growth conditions, and the obtained anatase TiO1.95F0.05 film had a low resistivity of 1.6 × 10−3 Ωcm and a high internal transmittance of & gt;95%. Furthermore, the refractive index of a TiO1.95F0.05 film was & gt;0.2 less than that of undoped TiO2. By comparing the refractive indices of F:TiO2 and Nb:TiO2, we concluded that the decreased refractive index in F:TiO2 can be attributed to a reduced electronic polarizability due to increased bond ionicity as well as doped electrons.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4712061
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2012
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 4
    Online Resource
    Online Resource
    Efficient negative ion production in rf plasmas using a mesh grid bias method
    AIP Publishing ; 2008
    In:  Review of Scientific Instruments Vol. 79, No. 2 ( 2008-02-01)
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 79, No. 2 ( 2008-02-01)
    Abstract: Using a grid bias method for plasma parameter control, volume production of hydrogen negative ions H− is studied in pure hydrogen rf plasmas. Relationship between the extracted H− ion currents and plasma parameters is discussed. It is confirmed that both high and low electron temperature Te plasmas are produced in the separated regions when the grid is negatively biased. In addition, with changing grid potential Vg, values of ne increase while Te decrease in their values. The negative ion production depends strongly on the grid potential and related plasma conditions.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/1.2805372
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2008
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 5
    Online Resource
    Online Resource
    Composition-induced structural, electrical, and magnetic phase transitions in AX -type mixed-valence cobalt oxynitride epitaxial thin films
    AIP Publishing ; 2015
    In:  Applied Physics Letters Vol. 107, No. 23 ( 2015-12-07)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 107, No. 23 ( 2015-12-07)
    Abstract: Synthesis of mid- to late-transition metal oxynitrides is generally difficult by conventional thermal ammonolysis because of thermal instability. In this letter, we synthesized epitaxial thin films of AX-type phase-pure cobalt oxynitrides (CoOxNy) by using nitrogen-plasma-assisted pulsed laser deposition and investigated their structural, electrical, and magnetic properties. The CoOxNy thin films with 0 ≤ y/(x + y) ≤ 0.63 grown on MgO (100) substrates showed a structural phase transition from rock salt (RS) to zinc blend at the nitrogen content y/(x + y) ∼ 0.5. As the nitrogen content increased, the room-temperature electrical resistivity of the CoOxNy thin films monotonically decreased from the order of 105 Ω cm to 10−4 Ω cm. Furthermore, we observed an insulator-to-metal transition at y/(x + y) ∼ 0.34 in the RS-CoOxNy phase, which has not yet been reported in Co2+/Co3+ mixed-valence cobalt oxides with octahedral coordination. The low resistivity in the RS-CoOxNy phase, on the 10−3 Ω cm order, may have originated from the intermediate spin state of Co3+ stabilized by the lowered crystal field symmetry of the CoO6−nNn octahedra (n = 1, 2,…5). Magnetization measurements suggested that a magnetic phase transition occurred in the RS-CoOxNy films during the insulator-to-metal transition. These results demonstrate that low-temperature epitaxial growth is a promising approach for exploring novel electronic functionalities in oxynitrides.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4937431
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 6
    Online Resource
    Online Resource
    Amorphous ZnO x Ny thin films with high electron Hall mobility exceeding 200 cm2 V−1 s−1
    AIP Publishing ; 2016
    In:  Applied Physics Letters Vol. 109, No. 26 ( 2016-12-26)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 109, No. 26 ( 2016-12-26)
    Abstract: Zinc oxynitride (ZnOxNy) has attracted much attention as an amorphous semiconductor with high electron mobility. Recent studies reported that ZnOxNy thin films grown by sputtering contained nanocrystals, which might reduce their electron mobility through grain boundary scattering. In this study, we fabricated amorphous ZnOxNy thin films on a glass substrate by a less-energetic nitrogen-plasma-assisted pulsed laser deposition (PLD) to suppress the formation of the nanocrystals. Grown by PLD under optimized conditions, these ZnOxNy thin films exhibited extremely flat surfaces with a root-mean-squared roughness (Rrms) of less than 0.3 nm. The Hall mobility of these films exceeded 200 cm2 V−1 s−1 at a critical carrier concentration of ∼1 × 1019 cm−3, which was twice as high as the reported values for sputter-deposited films. Meanwhile, the mobility of films with larger Rrms was limited to ∼160 cm2 V−1 s−1 even at the critical carrier concentration and comparable with that of the sputter-deposited ZnOxNy films. The substantial enhancement in mobility in extremely flat ZnOxNy films demonstrated that suppressing the formation of nanocrystals is the key to fabricating amorphous ZnOxNy thin films with very high mobility.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4973203
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 7
    Online Resource
    Online Resource
    Metal-induced solid-phase crystallization of amorphous TiO 2 thin films
    AIP Publishing ; 2012
    In:  Applied Physics Letters Vol. 101, No. 5 ( 2012-07-30), p. 052101-
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 101, No. 5 ( 2012-07-30), p. 052101-
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4739934
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2012
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 8
    Online Resource
    Online Resource
    Direct growth of transparent conducting Nb-doped anatase TiO2 polycrystalline films on glass
    AIP Publishing ; 2009
    In:  Journal of Applied Physics Vol. 105, No. 12 ( 2009-06-15)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 105, No. 12 ( 2009-06-15)
    Abstract: This paper proposes a novel sputter-based method for the direct growth of transparent conducting Ti1−xNbxO2 (TNO) polycrystalline films on glass, without the need for any postdeposition treatments, by the use of an initial seed-layer. Anatase TNO epitaxial films grown on LaAlO3 (100) substrates under a reducing atmosphere exhibited a low resistivity (ρ) of (3–6)×10−4Ωcm. On glass, however, highly resistive rutile phase polycrystalline films (ρ∼100Ωcm) formed preferentially under the same conditions. These results suggest that epitaxial stabilization of the oxygen-deficient anatase phase occurs on lattice-matched substrates. To produce a similar effect on a glass surface, we deposited a seed-layer of anatase TNO with excellent crystallinity under an increased oxygen atmosphere. As a result, anatase phase TNO polycrystalline films could be grown even under heavily reducing atmospheres. An optimized film exhibited ρ=1.1×10−3Ωcm and optical absorption lower than 10% in the visible region. This ρ value is more than one order of magnitude lower than values reported for directly deposited TNO polycrystalline films. This indicates that the seed-layer method has considerable potential for producing transparent conducting TNO polycrystalline films on glass.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3148267
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2009
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...