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  • AIP Publishing  (6)
  • 1
    Online Resource
    Online Resource
    Electrically driven on-chip transferrable micro-LEDs
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 121, No. 24 ( 2022-12-12)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 121, No. 24 ( 2022-12-12)
    Abstract: In this study, we report the experimental demonstration of electrically driven on-chip transferrable microdisk light-emitting diodes (LEDs). A vertical p–i–n doped AlGaInP microdisk, including multi-quantum-well structures, is top-down-fabricated, on-chip micro-transferred, and converted into single micro-LEDs. Optically transparent and mechanically flexible multilayered graphene sheets are judiciously designed and introduced to the top and bottom surfaces of a single microdisk, thereby forming the top and bottom contacts. Using electroluminescence measurements, the fabricated micro-LEDs are characterized; they exhibit diode-like transport behaviors, spectroscopic light-out vs current (L–I) characteristics, and polarization-resolved emission properties. We believe that the proposed all-graphene-contact approach offers a direct and easy current injection scheme and further helps electrify various on-chip transferrable microarchitectures.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0111362
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Reynolds number effects on the flow over a twisted cylinder
    AIP Publishing ; 2019
    In:  Physics of Fluids Vol. 31, No. 2 ( 2019-02-01)
    Details
    In: Physics of Fluids, AIP Publishing, Vol. 31, No. 2 ( 2019-02-01)
    Abstract: We investigated the Reynolds number (Re) effects on the flow statics over a helically twisted elliptical (HTE) cylinder in the range of 3 × 103 ≤ Re ≤ 1 × 104 using large eddy simulation. For comparison, a smooth cylinder was also considered. The present flow statistics for the smooth cylinder are quite consistent with previous findings at Reynolds numbers of Re = 3900/4000 and 10 000 that were obtained by combining particle image velocimetry measurements and direct numerical simulations [Dong et al., “A combined direct numerical simulation-particle image velocity study of the turbulent near wake,” J. Fluid Mech. 569, 185–207 (2006)]. The mean drag and root mean square (RMS) lift coefficients had almost linear relations with Re. The HTE geometry showed more effective performance for the reduction of the drag and the RMS lift coefficients with increasing Re. The RMS streamwise velocity for the HTE cylinder appear ed different from that of the smooth cylinder. The HTE cylinder lacked RMS streamwise velocity behind the cylinder base, indicating small magnitudes of the fluctuations. In general, the tip of the mean vorticity layer for the HTE cylinder is thinner than that for the smooth cylinder. The thickness of mean vorticity layer depends on the spanwise direction rather than Re. Also, the tips of contours of the Reynolds stress are much sharper with increasing Re and approach the separation position of the cylinder surface. The elongated vortex formation length decreases almost linearly with Re.
    Type of Medium: Online Resource
    ISSN: 1070-6631 , 1089-7666
    URL: Article
    DOI: 10.1063/1.5079913
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 1472743-2
    detail.hit.zdb_id: 241528-8
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  • 3
    Online Resource
    Online Resource
    An 8-nm-thick Sn-doped polycrystalline β -Ga2O3 MOSFET with a “normally off” operation
    AIP Publishing ; 2021
    In:  Applied Physics Letters Vol. 119, No. 12 ( 2021-09-20)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 119, No. 12 ( 2021-09-20)
    Abstract: Monoclinic gallium oxide (β-Ga2O3) has attracted the interest of the scientific community due to its application in power electronics. Power electronics that need to handle a high voltage often uses a “normally off” device with a positive threshold voltage due to its fail-safe operation and its simple system architecture. In this work, 8-nm-thick Sn-doped polycrystalline β-Ga2O3 thin films were investigated as a channel material for power electronics, and their properties were characterized. The optical bandgap of the 8-nm-thick Sn-doped β-Ga2O3 was determined to be 5.77 eV, which is larger than that of 100-nm-thick Sn-doped β-Ga2O3 due to the quantum confinement effect. The developed back-gated device demonstrated normally off behavior and exhibited a voltage handling capacity as high as 224 V (2.88 MV/cm). This ultrathin β-Ga2O3 layer could also be applied to fields other than power electronics, including displays, optical sensors, photocatalytic sensors, and solar cells.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0065244
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    Online Resource
    Online Resource
    Optimal design of switched reluctance motor using two-dimensional finite element method
    AIP Publishing ; 2002
    In:  Journal of Applied Physics Vol. 91, No. 10 ( 2002-05-15), p. 6967-6969
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 91, No. 10 ( 2002-05-15), p. 6967-6969
    Abstract: Switched reluctance motor (SRM) has some advantages such as low cost, high torque density, etc., but SRM has essentially high torque ripple due to its salient structure. To apply SRM to the industrial field, we have to minimize torque ripple, which is the weak point of SRM. This article introduces optimal design process of SRM using a numerical method such as two-dimensional (2D) finite element method. The electrical and geometrical design parameters have been adopted as 2D design variables. From this work, we can obtain the optimal design, which minimizes the torque ripple. We also can obtain the optimal design, which maximizes the average torque. Finally, this article presents performance comparison of two optimal designs, the minimized torque ripple, and the maximized average torque.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.1452667
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2002
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 5
    Online Resource
    Online Resource
    Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate
    AIP Publishing ; 2019
    In:  AIP Advances Vol. 9, No. 12 ( 2019-12-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 9, No. 12 ( 2019-12-01)
    Abstract: Ferroelectric HfxZryOz (HZO) with an average polarization switching window of 32 µC/cm2 was demonstrated on a Si substrate with a ZrO2 interfacial layer (IL). It is suggested that the ZrO2 IL below HZO crystallizes in the form of an o-phase prior to HZO crystallization, during rapid thermal annealing, thereby promoting the vertical growth of an o-phase HZO layer. HZO with the ZrO2 IL consists mainly of an o-phase that exhibits an in-plane tensile stress of 2.68 GPa, resulting in superior ferroelectric characteristics. This technology has the potential to expedite the realization of ferroelectric Hf-based dielectrics in advanced memory and logic technology.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.5124402
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 2583909-3
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  • 6
    Online Resource
    Online Resource
    Time-resolved resonant elastic soft x-ray scattering at Pohang Accelerator Laboratory X-ray Free Electron Laser
    AIP Publishing ; 2020
    In:  Review of Scientific Instruments Vol. 91, No. 8 ( 2020-08-01)
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 91, No. 8 ( 2020-08-01)
    Abstract: Resonant elastic x-ray scattering has been widely employed for exploring complex electronic ordering phenomena, such as charge, spin, and orbital order, in particular, in strongly correlated electronic systems. In addition, recent developments in pump–probe x-ray scattering allow us to expand the investigation of the temporal dynamics of such orders. Here, we introduce a new time-resolved Resonant Soft X-ray Scattering (tr-RSXS) endstation developed at the Pohang Accelerator Laboratory X-ray Free Electron Laser (PAL-XFEL). This endstation has an optical laser (wavelength of 800 nm plus harmonics) as the pump source. Based on the commissioning results, the tr-RSXS at PAL-XFEL can deliver a soft x-ray probe (400 eV–1300 eV) with a time resolution of ∼100 fs without jitter correction. As an example, the temporal dynamics of a charge density wave on a high-temperature cuprate superconductor is demonstrated.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/5.0016414
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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