In:
Applied Physics Letters, AIP Publishing, Vol. 120, No. 2 ( 2022-01-10)
Abstract:
Manipulation of carrier types in SnSe crystals is quite advantageous to fabricate SnSe-based homojunction devices such as thermoelectric modules. However, tuning the n-type charge carrier at an optimal level of SnSe is quite challenging because of its natural p-type without intentional doping. Here, we report the realization of the n-type SnSe through halogens or Ce doping. Importantly, heavily electron doped SnSe single crystals (∼1019 cm−3) can be obtained by Ce-doping through the Bridgeman method. The electrical conductivity of as-grown SnSe crystals evolves from thermally activated behavior to the metallic one when the electron concentrations are increased from 1016 to 1019 cm−3. Remarkably, the power-factor and electronic quality factor of heavily electron Ce-doped SnSe crystals can reach 1.59 and 0.44 μW cm−1 K−2 at 300 K, respectively, which is one of the best thermoelectric n-type SnSe. This work suggests that Ce-doping through the Bridgeman method is an ideal route for further improving the thermoelectric property of n-type SnSe crystals.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2022
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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