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  • AIP Publishing  (147)
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  • 1
    Online Resource
    Online Resource
    First experimental comparisons of laser-plasma interactions between spherical and cylindrical hohlraums at SGIII laser facility
    AIP Publishing ; 2017
    In:  Matter and Radiation at Extremes Vol. 2, No. 2 ( 2017-03-01), p. 77-86
    Details
    In: Matter and Radiation at Extremes, AIP Publishing, Vol. 2, No. 2 ( 2017-03-01), p. 77-86
    Abstract: We present our recent laser-plasmas instability (LPI) comparison experiment at the SGIII laser facility between the spherical and cylindrical hohlraums. Three kinds of filling are considered: vacuum, gas-filling with or without a capsule inside. A spherical hohlraum of 3.6 mm in diameter, and a cylindrical hohlraum of 2.4 mm × 4.3 mm are used. The capsule diameter is 0.96 mm. A flat-top laser pulse with 3 ns duration and up to 92.73 kJ energy is used. The experiment has shown that the LPI level in the spherical hohlraum is close to that of the outer beam in the cylindrical hohlraum, while much lower than that of the inner beam. The experiment is further simulated by using our 2-dimensional radiation hydrodynamic code LARED-Integration, and the laser back-scattering fraction and the stimulated Raman scatter (SRS) spectrum are post-processed by the high efficiency code of laser interaction with plasmas HLIP. According to the simulation, the plasma waves are strongly damped and the SRS is mainly developed at the plasma conditions of electron density from 0.08 nc to 0.1 nc and electron temperature from 1.5 keV to 2.0 keV inside the hohlraums. However, obvious differences between the simulation and experiment are found, such as that the SRS back-scattering is underestimated, and the numerical SRS spectrum peaks at a larger wavelength and at a later time than the data. These differences indicate that the development of a 3D radiation hydrodynamic code, with more accurate physics models, is mandatory for spherical hohlraum study.
    Type of Medium: Online Resource
    ISSN: 2468-2047 , 2468-080X
    URL: Article
    DOI: 10.1016/j.mre.2017.01.001
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 2858469-7
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  • 2
    Online Resource
    Online Resource
    Strength and equation of state of fluorite phase CeO2 under high pressure
    AIP Publishing ; 2012
    In:  Journal of Applied Physics Vol. 112, No. 1 ( 2012-07-01)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 112, No. 1 ( 2012-07-01)
    Abstract: Fluorite phase CeO2 is compressed non-hydrostatically up to 27 GPa using a diamond anvil cell until the transition to α-PbCl2 phase occurred. The compressive strength (t) of CeO2 as a function of pressure is determined by the line width analysis of the high pressure angle dispersive x-ray diffraction patterns. The strength of CeO2 increases quickly below 3.30 GPa and reaches a plateau region at high pressures. A procedure combined the line width analysis and the line shift analysis together, based on the non-hydrostatic data to obtain the corresponding lattice parameter under hydrostatic pressures, is proposed and applied to the case of CeO2 sample. The bulk modulus and its pressure derivative of fluorite phase CeO2 (K0 = 235 (18) GPa, K0′ = 3.67) are obtained by fitting the P-V results into Vinet equation of state. A discussion of the pressure dependence of α, which determines the relative weights of the isostress and isostrain conditions across the grain boundary in an actual case, is presented.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4736555
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2012
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
    Online Resource
    Online Resource
    Experimental demonstration of non-line-of-sight visible light communication with different reflecting materials using a GaN-based micro-LED and modified IEEE 802.11ac
    AIP Publishing ; 2018
    In:  AIP Advances Vol. 8, No. 10 ( 2018-10-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 8, No. 10 ( 2018-10-01)
    Abstract: This paper gives an experimental demonstration of non-line-of-sight (NLOS) visible light communication (VLC) using a single 80 μm gallium nitride (GaN) based micro-light-emitting diode (micro-LED). This device shows a 3-dB electrical-to-optical modulation bandwidth of 92.7 MHz. IEEE 802.11ac modulation scheme with 80 MHz bandwidth, as an entry level of the fifth generation of Wi-Fi, was employed to use the micro-LED bandwidth efficiently. These practical techniques were successfully utilized to achieve a demonstration of line-of-sight (LOS) VLC at a speed of 433 Mbps and a bit error rate (BER) of 10−5 with a free space transmit distance 3.6 m. Besides this, we demonstrated directed NLOS VLC links based on mirror reflections with a data rate of 433 Mbps and a BER of 10−4. For non-directed NLOS VLC using a print paper as the reflection material, 16 QAM, 195 Mbps data rate, and a BER of 10−5 were achieved.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.5048942
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 2583909-3
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  • 4
    Online Resource
    Online Resource
    Effect of pressure on heterocyclic compounds: Pyrimidine and s-triazine
    AIP Publishing ; 2014
    In:  The Journal of Chemical Physics Vol. 141, No. 11 ( 2014-09-21)
    Details
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 141, No. 11 ( 2014-09-21)
    Abstract: We have examined the high-pressure behaviors of six-membered heterocyclic compounds of pyrimidine and s-triazine up to 26 and 26.5 GPa, respectively. Pyrimidine crystallizes in Pna21 symmetry (phase I) with the freezing pressure of 0.3 GPa, and transforms to another phase (phase II) at 1.1 GPa. Raman spectra of several compression-decompression cycles demonstrate there is a critical pressure of 15.5 GPa for pyrimidine. Pyrimidine returns back to its original liquid state as long as the highest pressure is below 15.1 GPa. Rupture of the aromatic ring is observed once pressure exceeds 15.5 GPa during a compression-decompression cycle, evidenced by the amorphous characteristics of the recovered sample. As for s-triazine, the phase transition from R-3c to C2/c is well reproduced at 0.6 GPa, in comparison with previous Raman data. Detailed Raman scattering experiments corroborate the critical pressure for s-triazine may locate at 14.5 GPa. That is, the compression is reversible below 14.3 GPa, whereas chemical reaction with ring opening is detected when the final pressure is above 14.5 GPa. During compression, the complete amorphization pressure for pyrimidine and s-triazine is identified as 22.4 and 15.2 GPa, respectively, based on disappearance of Raman lattice modes. Synchrotron X-ray diffraction patterns and Fourier transform infrared spectra of recovered samples indicate the products in two cases comprise of extended nitrogen-rich amorphous hydrogenated carbon (a-C:H:N).
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    URL: Article
    DOI: 10.1063/1.4895523
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 5
    Online Resource
    Online Resource
    Investigation of the light emission properties and carrier dynamics in dual-wavelength InGaN/GaN multiple-quantum well light emitting diodes
    AIP Publishing ; 2012
    In:  Journal of Applied Physics Vol. 112, No. 8 ( 2012-10-15)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 112, No. 8 ( 2012-10-15)
    Abstract: Three dual-wavelength InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) with increasing indium content are grown by metal-organic chemical vapor deposition, which contain six periods of low-In-content MQWs and two periods of high-In-content MQWs. For the low-In-content MQWs of three studied samples, their internal quantum efficiency (IQE) shows a rising trend as the emission wavelength increases from 406 nm to 430 nm due to the suppression of carriers escape from the wells to the barriers. However, for the high-In-content MQWs, the sample IQE falls rapidly with a further increase of emission wavelength from 496 nm to 575 nm. Theoretical calculation reveals that the electron-hole wave function overlap in the high-In-content MQWs is reduced because of an increase in the internal polarization field as indium content is increased. In addition, time-resolved photoluminescence decay curves show that the carriers generated in the low-In-content MQWs can be effectively transferred to the high-In-content part through the reabsorption process. However, the transfer time gradually becomes longer as emission wavelength increases, which means a reduction of carrier transfer rate between the different indium content MQWs. Furthermore, nonradiative recombination is enhanced in the high-In-content MQWs with longer emission wavelength due to the decline of crystal quality. Therefore, the fast drop of IQE for high-In-content MQWs can be attributed to the increase of the internal polarization field, the decrease of carrier transfer efficiency, and the enhanced nonradiative recombination. This research has a certain guiding value for an understanding of the recombination mechanism in the InGaN/GaN MQWs and for achieving high quality multiple-wavelength LEDs with better performance.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4759373
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2012
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 6
    Online Resource
    Online Resource
    In situ electrical impedance spectroscopy under high pressure on diamond anvil cell
    AIP Publishing ; 2007
    In:  Applied Physics Letters Vol. 91, No. 9 ( 2007-08-27)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 91, No. 9 ( 2007-08-27)
    Abstract: The effect of grain boundary on electrical transportation properties is a basic physical problem and also a subject of material science and technology. In situ electrical measurement of powdered materials under high pressure provides a chance to figure out the electrical properties of grain boundaries. In this letter, the authors report an in situ impedance spectroscopy method used in conjunction with a diamond anvil cell for electrical property research of grain boundaries under high pressure. Powdered CdS was pressed up to 23GPa and an impedance arc corresponding to the grain boundary was detected. It was found that the electrical property of the grain boundary changed with pressure and could be determined by the resistance and the relaxation frequency. Pressure decreases the effective scattering section of the grain boundary to charge carriers, and finally leads to the decrease of resistance and activation energy of the grain boundary.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2778760
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2007
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 7
    Online Resource
    Online Resource
    Homo-layer hafnia-based memristor with large analog switching window
    AIP Publishing ; 2021
    In:  Applied Physics Letters Vol. 118, No. 4 ( 2021-01-25)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 118, No. 4 ( 2021-01-25)
    Abstract: The fast development of high-accuracy neuromorphic computing requires stable analog memristors. While filamentary memory switching is very common in binary oxides, their resistive switching usually involves abrupt changes due to the rupture or reformation of metallic filaments. In this work, we designed a memristor consisting of dual-layer HfOy/HfOx, with different concentrations of oxygen vacancies (y  & gt; x). During the electroforming process, both the migration of existing oxygen vacancies in HfOx and the generation of new oxygen vacancies in HfOy occur simultaneously, leaving a semiconducting part close to the HfOy/HfOx interface. The resulting filament is not metallic as a whole, as revealed by first principles calculations. Such a device demonstrates excellent switching uniformity as well as highly gradual resistance change, ideal for neuromorphic computing. Through fine tuning of the filament structure, the device achieves low variation, high speed, gradual SET and RESET processes, and hundreds of stable multi-level state behaviors. The long-term synaptic plasticity was further achieved, showing good linearity and large analog switching window (ΔG as high as 487.5 μS). This works affords a route toward a gradual resistance change in oxide-based memristors.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0032556
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 8
    Online Resource
    Online Resource
    Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures
    AIP Publishing ; 2011
    In:  Journal of Applied Physics Vol. 109, No. 7 ( 2011-04-01)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 109, No. 7 ( 2011-04-01)
    Abstract: Prestrained InGaN layers with different indium composition were grown by metalorganic chemical vapor deposition as an interlayer before the growth of InGaN/GaN multiple quantum wells (MQWs) in laser diode structures. The strain relaxation of the MQWs with different indium composition prestrained InGaN interlayer was investigated by the grazing incidence x-ray diffraction method. Comparing to the low indium composition (about 3%) case, the strain relaxation occurred in the sample with high indium composition (about 10%) prestrained interlayer. The piezoelectric field in the MQW is also proved to be much smaller after inserting a high indium composition prestrained InGaN interlayer by a measurement of photoluminescence (PL) peak shift as a function of reverse bias voltage, indicating a reduction of the quantum-confined Stark effect (QCSE). Room temperature PL and temperature-dependent PL measurements showed that the PL intensity at 300 K and the internal quantum efficiency of the MQW sample with high indium composition prestrained interlayer were increased by 123% and 177%, respectively, compared with the low indium composition case. Therefore, the prestrained InGaN interlayer containing high indium composition is beneficial to the strain relaxation in the MQW layer and the enhancement of light emission efficiency due to the reduction of QCSE.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3569848
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2011
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 9
    Online Resource
    Online Resource
    High-Q metamaterials based on cavity mode resonance for THz sensing applications
    AIP Publishing ; 2020
    In:  AIP Advances Vol. 10, No. 7 ( 2020-07-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 10, No. 7 ( 2020-07-01)
    Abstract: Inspired by the development of terahertz (THz) technology, the demand for THz sensors with high quality and high sensitivity is significantly increasing. In this study, one-dimensional metallic metamaterials based on cavity mode resonance are proposed for sensing applications in the THz regime. Owing to the strong energy concentration in the cavity, metamaterials with a high quality factor were obtained. Thus, the presented device not only achieved narrowband selective absorption but also exhibited excellent refractive index sensing with high sensitivity, figure of merit, and quality factor. The physical mechanism was verified by comparing the simulation results with that of the coupled mode theory. The polarization dependence of absorption and dual-band sensing, which can be actively tuned by the broken symmetry between two adjacent units, were also discussed. Consequently, this study may open up new avenues for the development of biosensing and imaging applications.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/5.0007590
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 2583909-3
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  • 10
    Online Resource
    Online Resource
    Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents
    AIP Publishing ; 2013
    In:  Journal of Applied Physics Vol. 113, No. 1 ( 2013-01-07)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 113, No. 1 ( 2013-01-07)
    Abstract: Electroluminescence (EL) spectra of InGaN/GaN multiple quantum well light emitting diodes with different piezoelectric polarization fields were investigated under pulsed and direct currents. We find a positive correlation between the piezoelectric polarization field and the thermally induced red-shift of the EL spectra at high direct currents above 25 A/cm2. Under pulsed current, when thermal effects are negligible, a non-uniform EL spectrum blue-shift rate as a function of injection level is observed and compared with numerical results obtained by both self-consistent and non-self-consistent K·P methods. We conclude that the screening effect is positively related to the piezoelectric polarization field, but the band filling-induced blue-shift is almost independent from the piezoelectric field. The electrostatic fields induced by free carriers in the quantum wells increase rapidly with current but tend to saturate at higher injection where the band filling effect becomes the dominant mechanism for the blue-shift. Finally, at high injection above 30 A/cm2, an increase in Auger recombination and carrier leakage holds the spectral peaks almost constant in position.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4772683
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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