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  • AIP Publishing  (6)
  • 1
    Online Resource
    Online Resource
    Broadband diodelike asymmetric transmission of linearly polarized light in ultrathin hybrid metamaterial
    AIP Publishing ; 2014
    In:  Applied Physics Letters Vol. 105, No. 20 ( 2014-11-17)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 105, No. 20 ( 2014-11-17)
    Abstract: We present the underlying theory, the design specifications, and the experimental demonstration of the broadband diodelike asymmetric transmission of linearly polarized light in the near-infrared regime. This result is achieved through the use of a two-layer hybrid metamaterial, composed of an L-shaped metallic particle and a double nano antenna. The experimental results are shown to agree well with the theoretical predictions and the simulated transmission spectra. The realization of the diodelike asymmetric transmission can be attributed to the combination of two independently functioning metallic structures, which are shown to perform their respective function even when shifted away from perfect alignment. This work offers a further step in developing broadband diodelike asymmetric transmission for use in electromagnetic devices.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4902162
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    Electron-beam irradiation induced conductivity in ZnS nanowires as revealed by in situ transmission electron microscope
    AIP Publishing ; 2009
    In:  Journal of Applied Physics Vol. 106, No. 3 ( 2009-08-01)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 106, No. 3 ( 2009-08-01)
    Abstract: Electron transport variations in individual ZnS nanowires synthesized through a chemical vapor deposition process were in situ studied in transmission electron microscope under convergent electron-beam irradiation (EBI). It was found that the transport can dramatically be enhanced using proper irradiation conditions. The conductivity mechanism was revealed based on a detailed study of microstructure and composition evolutions under irradiation. EBI-induced Zn-rich domains’ appearance and related O doping were mainly responsible for the conductivity improvements. First-principles theoretical calculations additionally indicated that the generation of midbands within a ZnS band gap might also contribute to the improved conductivity.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3173286
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2009
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
    Online Resource
    Online Resource
    Quasi-aligned single-crystalline GaN nanowire arrays
    AIP Publishing ; 2005
    In:  Applied Physics Letters Vol. 87, No. 7 ( 2005-08-15)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 87, No. 7 ( 2005-08-15)
    Abstract: Quasi-aligned GaN nanowire arrays have been fabricated via a thermal evaporation of the starting reactants Ga2O3∕GaN. The GaN nanowires have uniform diameters of ∼300nm, lengths up to tens of micrometers and possess a sharp six-fold symmetrical pyramidlike tip. High-resolution transmission electron microscopy (TEM) analysis indicated that majority of GaN nanowires have a preferential growth direction along the [0001] direction. Room-temperature field-emission measurement showed that the as-synthesized GaN nanowire arrays have a lower turn-on field of 7.0V/μm. It is believed that both the sharp tips and rough surface of GaN nanowires contribute to the excellent electron emission behavior.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2011794
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2005
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    Online Resource
    Online Resource
    Fano resonance based optical modulator reaching 85% modulation depth
    AIP Publishing ; 2015
    In:  Applied Physics Letters Vol. 107, No. 17 ( 2015-10-26)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 107, No. 17 ( 2015-10-26)
    Abstract: In this paper, we demonstrate the combination of nematic liquid crystal with a binary silicon nanohole array to realize a high performance Fano resonance based optical modulator. The simulations using a finite difference time domain method reveal that the sharp Fano profile in the binary array originates from the interaction of the in-phased and anti-phased lattice collective resonance hybridized through lattice coupling effects. Experimental results agree very well with the simulations and demonstrate the strong dependence of the Q factor and spectral contrast of the resonance on the radius difference of the two nanohole arrays. Infiltrated with nematic liquid crystal, E7, the Fano profile can be dynamically and continuously tuned by an applied voltage, and an unprecedented modulation depth up to 85% is achieved.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4935031
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    Online Resource
    Online Resource
    Wurtzite-type faceted single-crystalline GaN nanotubes
    AIP Publishing ; 2006
    In:  Applied Physics Letters Vol. 88, No. 9 ( 2006-02-27)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 88, No. 9 ( 2006-02-27)
    Abstract: We report on the direct fabrication of single-crystalline wurtzite-type hexagonal GaN nanotubes via a newly designed, controllable, and reproducible chemical thermal-evaporation process. The nanotubes are single crystalline, have one end closed, an average outer diameter of ∼300nm, an inner diameter of ∼100nm, and a wall thickness of ∼100nm. The structure and morphology of the tubes are characterized using a scanning electron microscope and a transmission electron microscope. The cathodoluminescence of individual nanotubes is also investigated. The growth mechanism, formation kinetics, and crystallography of GaN nanotubes are finally discussed.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2182065
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2006
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 6
    Online Resource
    Online Resource
    Thermal oxidation of gallium nitride nanowires
    AIP Publishing ; 2003
    In:  Applied Physics Letters Vol. 83, No. 15 ( 2003-10-13), p. 3177-3179
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 83, No. 15 ( 2003-10-13), p. 3177-3179
    Abstract: The thermal oxidation of gallium nitride (GaN) nanowires in dry air was investigated by using thermogravimetric and transmission electron microscopy. The oxidation strongly depends on the oxidation temperature and the nanowire diameters. At temperatures lower than 700 °C, the oxidation is dominantly controlled by an oxygen absorption reaction. A chemical oxidation reaction occurs upon further increasing the temperature, accompanied by the formation of monoclinic gallium oxide (Ga2O3). The crystalline Ga2O3 can form a dense protective shell on the surfaces of GaN nanowires with large diameters, whereas Ga2O3 could not crystallize into one-dimensional morphology on the initial GaN nanowires with small diameters.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1618943
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2003
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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