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  • AIP Publishing  (28)
  • 1
    Online Resource
    Online Resource
    Built-in electric field in ZnO based semipolar quantum wells grown on (101¯2) ZnO substrates
    AIP Publishing ; 2013
    In:  Applied Physics Letters Vol. 103, No. 26 ( 2013-12-23)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 103, No. 26 ( 2013-12-23)
    Abstract: We report on the properties of semipolar (Zn,Mg)O/ZnO quantum wells homoepitaxially grown by molecular beam epitaxy on (101¯2) R-plane ZnO substrates. We demonstrate that atomically flat interfaces can be achieved with fully relaxed quantum wells because the mismatch between (Zn,Mg)O and ZnO is minimal for this growth orientation. The photoluminescence properties evidence a quantum confined Stark effect with an internal electric field estimated to 430 kV/cm for a 17% Mg content in the barriers. The quantum well emission is strongly polarized along the [1¯21¯0] direction and a comparison with the semipolar bulk ZnO luminescence polarization points to the effect of the confinement.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4851116
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    Probing the nature of carrier localization in GaInNAs epilayers by optical methods
    AIP Publishing ; 2013
    In:  Applied Physics Letters Vol. 103, No. 1 ( 2013-07-01)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 103, No. 1 ( 2013-07-01)
    Abstract: Photoluminescence (PL), optical pumping, and reflectance studies of nominally undoped and p-type GaInNAs epilayers are presented. The PL peak energy of the nominally undoped sample exhibits an S-shaped dependence on temperature for T  & lt; 50 K. This is attributed to recombination of bound excitons localized on traps. The energy of the PL circular-polarization maximum coincides with the energy of the free-exciton related reflectance feature at all temperatures. In heavily p-type samples the S-shaped temperature-dependence of the PL energy disappears, and the PL peak and circular polarization maximum coincide with the reflectance feature at all temperatures, indicating that the PL is free-exciton-like.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4813388
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission
    AIP Publishing ; 2017
    In:  Journal of Applied Physics Vol. 122, No. 8 ( 2017-08-28)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 122, No. 8 ( 2017-08-28)
    Abstract: The optical properties of AlyGa1-yN quantum dots (QDs), with y = 0 or y = 0.1, in an AlxGa1−xN matrix are studied. The influence of the QD layer design is investigated pointing out the correlations between the QD structural and optical properties. In a first part, the role of the epitaxial strain in the dot self-assembling process is studied by fabricating GaN QD layers on different AlxGa1−xN layers with 0.5 ≤ x ≤ 0.7. Photoluminescence (PL) measurements show the main influence of the increase of the internal electric field (Fint) on the QD optical response inducing a strong red shift in the emission energy as x increases. Time resolved combined with temperature dependent PL measurements enabled the estimation of the QD internal quantum efficiencies at low temperature showing values around 50%. In addition, a PL integrated intensity ratio up to 74% is shown, between 300 and 9 K. In the second part, the design of Al0.1Ga0.9N QDs was investigated, by varying the Al0.1Ga0.9N amount deposited. An increase of the transition energy (from 3.65 eV up to 3.83 eV) is obtained while decreasing the deposited amount. Calculations of the ground state transition energies as a function of the Al0.1Ga0.9N dot height give a value of Fint around 2.0 ± 0.5 MV/cm. Therefore, the propensity of Al0.1Ga0.9N dots to emit at much higher energies than GaN dots (a PL shift of ∼1 eV using a low excitation power) is seen as the consequence of the reduced Fint together with their smaller sizes.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.5000238
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 4
    Online Resource
    Online Resource
    Influence of luminescence self-absorption on photoluminescence decay in GaAs
    AIP Publishing ; 1989
    In:  Journal of Applied Physics Vol. 66, No. 11 ( 1989-12-01), p. 5542-5548
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 66, No. 11 ( 1989-12-01), p. 5542-5548
    Abstract: In direct-gap semiconductors, self-absorption processes are known to increase minority carrier lifetimes. In this paper, an original method is developed to solve the dynamic continuity equation with the inclusion of self-absorption phenomena. Also named photo recycling, this process is treated in a model which takes into account the experimental conditions, together with geometrical and optical characteristics of the sample. This method is used to analyze photoluminescence decay experiments on angle-lapped GaAs/Ga0.15Al0.85As double heterostructures. The inclusion of the reabsorption effects is shown to improve the global fit of calculated luminescence with experimental data. This leads to a more accurate determination of key electronic parameters such as diffusion coefficient, surface recombination velocities, and nonradiative lifetime of minority carriers.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.343658
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1989
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
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  • 5
    Online Resource
    Online Resource
    Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges
    AIP Publishing ; 2019
    In:  Journal of Applied Physics Vol. 126, No. 20 ( 2019-11-28)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 126, No. 20 ( 2019-11-28)
    Abstract: AlyGa1−yN quantum dots (QDs) have been grown by molecular beam epitaxy on AlxGa1−xN (0001) using a 2-dimensional–3-dimensional growth mode transition that leads to the formation of QDs. QDs have been grown for Al compositions y varying between 10% and 40%. The influence of the active region design [composition y, QD height, and bandgap difference (ΔEg) between the AlxGa1−xN cladding layer and the AlyGa1−yN QDs] is discussed based on microscopy, continuous wave photoluminescence (PL), and time-resolved PL (TRPL) measurements. In particular, increasing y leads to a shift of the QD emission toward shorter wavelengths, allowing covering a spectral range in the UV from 332 nm (UVA) to 276 nm (UVC) at room temperature (RT). The low-temperature (LT) internal quantum efficiency of the QD ensembles was estimated from TRPL experiments at 8 K and values between 11% and 66% were deduced. The highest internal quantum efficiency (IQE)-LT is found for the QDs with higher Al content y. Then, the PL spectrally integrated intensity ratios between RT and LT were measured to estimate the IQE of the samples at RT. The PL ratio is higher for larger ΔEg, for QDs with y of 0.1 or 0.2, and high PL intensity ratios up to 30% were also measured for QDs with larger y of 0.3 and 0.4. RT IQE values between 5% and 20% are deduced for AlyGa1−yN QDs emitting in the 276–308 nm range.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.5115593
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 6
    Online Resource
    Online Resource
    III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet
    AIP Publishing ; 2016
    In:  Applied Physics Letters Vol. 109, No. 23 ( 2016-12-05)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 109, No. 23 ( 2016-12-05)
    Abstract: We present a series of microdisk lasers realized within the same GaN-on-Si photonic platform scheme, and operating at room temperature under pulsed optical pumping over a broad spectral range extending over λ = 275 nm–470 nm. The III-nitride microdisks embed either binary GaN/AlN multiple quantum wells (MQWs) for UV operation, or ternary InGaN/GaN MQWs for violet and blue operation. This demonstrates the versatility of this nitride-on-silicon platform, and the realization on this platform of efficient active layers for lasing action over a 200 nm broad UV to visible spectral range. We probe the lasing threshold carrier density over the whole spectral range and found that it is similar whatever the emission wavelength for these Q  & gt; 1000 microdisk resonators with a constant material quality until quantum confined Stark effect takes over. The threshold is also found independent of microdisk diameters from 3 to 12 μm, with a β factor intermediate between the one of vertical cavity lasers and the one of small modal volume “thresholdless” lasers.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4971357
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 211245-0
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  • 7
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    Online Resource
    Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
    AIP Publishing ; 2001
    In:  Applied Physics Letters Vol. 79, No. 20 ( 2001-11-12), p. 3230-3232
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 79, No. 20 ( 2001-11-12), p. 3230-3232
    Abstract: The strain in GaN epitaxial layers grown on silicon (111) substrates by metalorganic vapor phase epitaxy has been investigated. The insertion of AlN/GaN superlattices was found to decrease the stress sufficiently for avoiding crack formation in an overgrown thick (2.5 μm) GaN layer. X-ray diffraction and photoluminescence measurements are used to determine the effect of these AlN/GaN superlattices on the strain in the subsequent GaN layers. A reduction of threading dislocation density is also observed by transmission electron microscopy and atomic force microscopy when such superlattices are used. Strong band edge photoluminescence of GaN on Si(111) was observed with a full width at half maximum of the bound exciton line as low as 6 meV at 10 K. The 500 arcsec linewidth on the (002) x-ray rocking curve also attests the high crystalline quality of GaN on Si (111), when using these AlN/GaN superlattices.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1415043
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 211245-0
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  • 8
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    Online Resource
    Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy
    AIP Publishing ; 2000
    In:  Journal of Applied Physics Vol. 87, No. 1 ( 2000-01-01), p. 577-583
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 87, No. 1 ( 2000-01-01), p. 577-583
    Abstract: The growth of GaN on 6H–SiC is three dimensional (3D) and results in the formation of large islands presenting hexagonal truncated shape with {1–101} lateral facets and a top {0001} facet. In this work, we present a three steps growth process that enables us to grow high quality mirrorlike GaN layers without using AlN buffer layers. During a first step, a thin 3D GaN layer is deposited at high temperature. This layer is smoothed under ammonia flow for several minutes when the growth is interrupted. The subsequent growth of GaN is two dimensional. 600 nm thick GaN films were grown. They were analyzed by high resolution x-ray diffraction, reflectivity, and photoluminescence. All the layers are under strong tensile biaxial strain. The correlation between residual tensile strain in GaN layers and their optical properties is reported for biaxial deformations εxx ranging up to 0.37%.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.371902
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 9
    Online Resource
    Online Resource
    From visible to white light emission by GaN quantum dots on Si(111) substrate
    AIP Publishing ; 1999
    In:  Applied Physics Letters Vol. 75, No. 7 ( 1999-08-16), p. 962-964
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 75, No. 7 ( 1999-08-16), p. 962-964
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.124567
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 211245-0
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  • 10
    Online Resource
    Online Resource
    GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get high luminescence efficiency in the near ultraviolet range
    AIP Publishing ; 2011
    In:  Journal of Applied Physics Vol. 110, No. 8 ( 2011-10-15)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 110, No. 8 ( 2011-10-15)
    Abstract: The epitaxial growth of GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures and their structural and optical properties are reported. The nanostructure formation results from a strain induced growth process (Stransky-Krastanov-like growth mode). Atomic force microscopy measurements show that depending on the amount of deposited GaN, the nanostructure shape evolves from an island shape to a string shape aligned along the [1-100] direction. Transmission electron microscopy experiments reveal that (11-20) and (11-23) lateral facets are formed, making with the (11-22) growth plane an angle of 32° and 12°, respectively, and giving a very asymmetric nanostructure shape. Photoluminescence (PL) experiments as a function of the excitation power and temperature show that the internal electric field is very low compared to the case of GaN/Al0.5Ga0.5N (0001) polar quantum dots (QDs). As a consequence, the PL emission is strongly shifted towards the UV range compared to polar QDs and the full width at half maximum of the PL peak is drastically reduced. Furthermore, a room temperature PL nanostructure emission 300 times more intense than that of the semi-polar GaN template is obtained despite a large density of defects in the surrounding matrix, as expected for efficient carrier localization inside the nanostructures.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3654053
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2011
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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