In:
Review of Scientific Instruments, AIP Publishing, Vol. 77, No. 3 ( 2006-03-01)
Abstract:
Two methods to form nanoparticles at a certain depth in a thin oxide layer by negative-ion implantation into the oxide layer of silicon substrate have been investigated. One method is by implantation at a low energy and the other is by a thermal diffusion after implantation. Regarding the low-energy implantation, about 1keV of ion energy is required. In general, a surface charge-up of the oxide layer arises from a positive-ion implantation to affect ion penetration depth. In this research, we used negative ion implantation because of its advantage of almost “charge-up-free” feature, even for insulating materials. We obtained delta-layered gold nanoparticles (Au NPs) in a 25nm thick SiO2 layer on Si by the low-energy implantation method of gold negative ions at 1keV. The center depth and an average diameter of the delta-layered Au NPs were 5nm and 7nm, respectively. As by the thermal diffusion after implantation, silver negative ions were implanted into 25nm thick SiO2∕Si at 10keV with 5×1015ions∕cm2 at room temperature. Implanted atoms diffused from the implanted site, depending on annealing temperature. Only after annealing at 700°C, delta-layered silver nanoparticles (Ag NPs) were obtained near the interface of SiO2∕Si.
Type of Medium:
Online Resource
ISSN:
0034-6748
,
1089-7623
Language:
English
Publisher:
AIP Publishing
Publication Date:
2006
detail.hit.zdb_id:
209865-9
detail.hit.zdb_id:
1472905-2
SSG:
11
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