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  • AIP Publishing  (2)
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  • AIP Publishing  (2)
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  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 2023
    In:  AIP Advances Vol. 13, No. 2 ( 2023-02-01)
    In: AIP Advances, AIP Publishing, Vol. 13, No. 2 ( 2023-02-01)
    Abstract: Single event upset effect is an important factor that causes performance degradation and functional failure of aerospace equipment components in space radiation environment. When high-energy particles incident on semiconductor devices in working state, they will induce functional errors of devices and even cause permanent damage. Based on the finite element method, the three-dimensional simulation of Metal-oxide-semiconductor field-effect transistor (MOSFET) is carried out. The single event upset effect of MOSFET under heavy ion irradiation and the influence of heavy ion irradiation on transient drain current are investigated. The results show that the transient drain current of MOSFET devices will increase rapidly when heavy ions are incident, and then the logic state of the devices will change. With the increase in linear energy transfer density, the peak value of the transient drain current pulse increases and the pulse width decreases. With the increase in the incident angle, the peak value of the pulse first increases and then decreases. The maximum value is obtained when the incident angle is vertical, the pulse width first decreases and then increases, and the minimum value is obtained when the incident angle is vertical. With the increase in MOSFET size, the difference of transient drain current formed by symmetrical heavy ion incidence is becoming smaller and smaller. When the incident track is completely in the drain region, the simulation results are the same.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 2583909-3
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  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 2023
    In:  Applied Physics Letters Vol. 123, No. 5 ( 2023-07-31)
    In: Applied Physics Letters, AIP Publishing, Vol. 123, No. 5 ( 2023-07-31)
    Abstract: Free-space Brillouin lasers (BLs) generate high-power narrow-linewidth laser outputs at specific wavelengths. However, despite these impressive results, further compressing the Stokes linewidth while maintaining a high-power output remains a challenge. This study was conducted to investigate the design of BLs, starting from the phase-matching conditions and stability of a Brillouin cavity, for media with different phonon frequencies. A high-power and narrow-linewidth output can be realized using large-size, wide-gain-bandwidth Brillouin media. We experimentally demonstrated a BL using fused silica and diamond with the same cavity parameters. Stokes powers of 21.6 and 18.9 W were obtained with fused silica and diamond, respectively, at an available pump power of 58 W. Using fused silica, a Stokes linewidth of 1.2 kHz was obtained, which is two times narrower than that obtained using the diamond BL. Such BL design routes for various Brillouin media provide a path for achieving high-power, ultra-narrow-linewidth laser radiation at specific wavelengths.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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