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  • 1
    Online Resource
    Online Resource
    Design considerations for indirectly driven double shell capsules
    AIP Publishing ; 2018
    In:  Physics of Plasmas Vol. 25, No. 9 ( 2018-09-01)
    Details
    In: Physics of Plasmas, AIP Publishing, Vol. 25, No. 9 ( 2018-09-01)
    Abstract: Double shell capsules are predicted to ignite and burn at relatively low temperature (∼3 keV) via volume ignition and are a potential low-convergence path to substantial α-heating and possibly ignition at the National Ignition Facility. Double shells consist of a dense, high-Z pusher, which first shock heats and then performs work due to changes in pressure and volume (PdV work) on deuterium-tritium gas, bringing the entire fuel volume to high pressure thermonuclear conditions near implosion stagnation. The high-Z pusher is accelerated via a shock and subsequent compression of an intervening foam cushion by an ablatively driven low-Z outer shell. A broad capsule design parameter space exists due to the inherent flexibility of potential materials for the outer and inner shells and foam cushion. This is narrowed down by design physics choices and the ability to fabricate and assemble the separate pieces forming a double shell capsule. We describe the key physics for good double shell performance, the trade-offs in various design choices, and the challenges for capsule fabrication. Both 1D and 2D calculations from radiation-hydrodynamic simulations are presented.
    Type of Medium: Online Resource
    ISSN: 1070-664X , 1089-7674
    URL: Article
    DOI: 10.1063/1.5042478
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 1472746-8
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  • 2
    Online Resource
    Online Resource
    Possible energy gain for a plasma-liner-driven magneto-inertial fusion concept
    AIP Publishing ; 2014
    In:  Physics of Plasmas Vol. 21, No. 7 ( 2014-07-01)
    Details
    In: Physics of Plasmas, AIP Publishing, Vol. 21, No. 7 ( 2014-07-01)
    Abstract: A one-dimensional parameter study of a Magneto-Inertial Fusion (MIF) concept indicates that significant gain may be achievable. This concept uses a dynamically formed plasma shell with inwardly directed momentum to drive a magnetized fuel to ignition, which in turn partially burns an intermediate layer of unmagnetized fuel. The concept is referred to as Plasma Jet MIF or PJMIF. The results of an adaptive mesh refinement Eulerian code (Crestone) are compared to those of a Lagrangian code (LASNEX). These are the first published results using the Crestone and LASNEX codes on the PJMIF concept.
    Type of Medium: Online Resource
    ISSN: 1070-664X , 1089-7674
    URL: Article
    DOI: 10.1063/1.4885075
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 1472746-8
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  • 3
    Online Resource
    Online Resource
    Role of the piezoelectric effect in device uniformity of GaAs integrated circuits
    AIP Publishing ; 1984
    In:  Applied Physics Letters Vol. 45, No. 3 ( 1984-08-01), p. 279-281
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 45, No. 3 ( 1984-08-01), p. 279-281
    Abstract: In order to assess the orientation dependence of device uniformity in GaAs integrated circuits, metal-semiconductor field-effect transistors (MESFET’s) were fabricated along different crystal orientations on a 3-in. (100) substrate and compared with one another. Measurements indicated that the characteristics of FET’s oriented along [011] and [011̄] directions have strong dependence upon their radial positions on the wafer. However, FET’s oriented in [001] and [010] directions do not display such dependence and have better device uniformity. The orientation effect on the radial dependence of the FET device characteristics can be attributed to the piezoelectric effect.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.95172
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1984
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    Online Resource
    Online Resource
    Mechanism of surface conduction in semi-insulating GaAs
    AIP Publishing ; 1984
    In:  Applied Physics Letters Vol. 44, No. 9 ( 1984-05-01), p. 869-871
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 44, No. 9 ( 1984-05-01), p. 869-871
    Abstract: The space-charge-limited current leakage in processed semi-insulating GaAs wafer has been found to occur very close to the surface. The depth profile of the EL2 traps has been calculated from the measured trap-fill-limited voltage (Vt) of the leakage current versus etch depth and agrees well with the reported experimental result. A proposed mechanism of surface conduction is presented based on EL2 outdiffusion. The calculated substrate I-V relation agrees quantitatively with the measured results.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.94961
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1984
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    Online Resource
    Online Resource
    Photoluminescence from Si irradiated with 1.5-MeV electrons at 100 °K
    AIP Publishing ; 1976
    In:  Journal of Applied Physics Vol. 47, No. 7 ( 1976-07-01), p. 3010-3015
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 47, No. 7 ( 1976-07-01), p. 3010-3015
    Abstract: The effects which low-temperature electron irradiation have on the photoluminescence from Si provide new information regarding irradiation-induced defects which participate in radiative recombination. Previous identifications of the 0.8–1.0-eV band with the divacancy and the 0.6–0.8-eV band with the Si-G15 (or K) center are apparently in error. The 0.8–1.0-eV band appears only after anneals above ∼300 °K, whereas the 0.6–0.8-eV band can be detected after 100 °K anneals. The lower-energy band may be due to radiative recombination at an oxygen-modified divacancy or a carbon-oxygen-vacancy complex. The 0.8–1.0-eV band may involve a carbon-related defect. A band between 0.7 and 1.0 eV, which is seen only from boron-doped crystals, may arise from a defect involving boron and intrinsic defects.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.323044
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1976
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 6
    Online Resource
    Online Resource
    Recombination in heavily doped planar diodes
    AIP Publishing ; 1979
    In:  Journal of Applied Physics Vol. 50, No. 5 ( 1979-05-01), p. 3478-3483
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 50, No. 5 ( 1979-05-01), p. 3478-3483
    Abstract: A process is described which produces a shallow pn-junction device with heavy surface doping and very high collection efficiency. Electron-beam techniques were used to measure collection efficiency as a function of depth and to modulate the surface recombination velocity through an MOS capacitor fabricated on the diode. The results of these studies indicate that surface recombination is the dominant effect on carrier loss.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.326342
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1979
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 7
    Online Resource
    Online Resource
    Symmetrical contours of deep level EL2 in liquid encapsulated Czochralski GaAs
    AIP Publishing ; 1983
    In:  Applied Physics Letters Vol. 43, No. 3 ( 1983-08-01), p. 305-307
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 43, No. 3 ( 1983-08-01), p. 305-307
    Abstract: We have determined the isoconcentration contours of the deep level EL2 across 3-in.-diam, semi-insulating GaAs crystals grown by the liquid encapsulated Czochralski technique. The contours are essentially fourfold symmetric at the seed end of the crystals. The symmetrical pattern is independent of the melt stoichiometry and the relative direction of crystal and crucible rotation. EL2 distributions in the tail of the same crystals are often of lower symmetry. The results support a native defect model for EL2 in which the formation of the defect is enhanced by stress in the crystal.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.94294
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1983
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 8
    Online Resource
    Online Resource
    Measurement of boron impurity profiles in Si using glow discharge optical spectroscopy
    AIP Publishing ; 1974
    In:  Applied Physics Letters Vol. 25, No. 8 ( 1974-10-15), p. 435-438
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 25, No. 8 ( 1974-10-15), p. 435-438
    Abstract: Glow discharge optical spectroscopy (GDOS) has been applied to the measurement of impurity profiles in boron-diffused and ion-implanted Si samples. The GDOS technique provides a convenient and sensitive probe of boron impurity profiles; results are presented for concentrations below 5×1017 cm−3. For a Si sample which has been subjected to a 1-h constant source boron diffusion at 1100°C, the measured profile exhibited enhanced diffusion effects typical of previously reported results measured by other techniques. Similarly, a sample implanted with 120-keV B+ ions to a fluence of 1014 cm−2 exhibited a typical boron distribution. The position of the measured peak concentration corresponded well with that predicted by theory, and the implanted distribution exhibited a prominent tail as reported from other measurements.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1655538
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1974
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 9
    Online Resource
    Online Resource
    Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAs
    AIP Publishing ; 1982
    In:  Applied Physics Letters Vol. 40, No. 1 ( 1982-01-01), p. 46-48
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 40, No. 1 ( 1982-01-01), p. 46-48
    Abstract: We show that the electrical compensation of undoped GaAs grown by the liquid encapsulated Czochralski technique is controlled by the melt stoichiometry. The concentration of the deep donor EL2 in the crystal depends on the As concentration in the melt, increasing from about 5×1015 cm−3 to 1.7×1016 cm−3 as the As atom fraction increases from 0.48 to 0.51. Furthermore, we show that the free-carrier concentration of semi-insulating GaAs is determined by the relative concentrations of EL2 and carbon acceptors. As a result, semi-insulating material can be obtained only above a critical As concentration (0.475-atom fraction in our material) where the concentration of EL2 is sufficient to compensate residual acceptors. Below the critical As concentration the material is p type due to excess acceptors.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.92913
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1982
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 10
    Online Resource
    Online Resource
    Pulsed-electron-beam annealing of ion-implantation damage
    AIP Publishing ; 1979
    In:  Journal of Applied Physics Vol. 50, No. 2 ( 1979-02-01), p. 783-787
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 50, No. 2 ( 1979-02-01), p. 783-787
    Abstract: Short-duration high-intensity pulsed electron beams have been used to anneal ion-implantation damage in silicon and to electrically activate the dopant species. Lattice regrowth and dopant activation were determined using 4He+ backscattering, SEM, TEM, and device performance characteristics as diagnostic techniques. The annealing mechanism is believed to be liquid-phase epitaxial regrowth initiating from the substrate. The high-temperature transient pulse produced by the electron beam causes the dopant to diffuse rapidly in the region where the liquid state is achieved.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.326045
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1979
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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