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  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 1981
    In:  Journal of Applied Physics Vol. 52, No. 8 ( 1981-08-01), p. 5159-5163
    In: Journal of Applied Physics, AIP Publishing, Vol. 52, No. 8 ( 1981-08-01), p. 5159-5163
    Abstract: Deep level transient spectroscopy (DLTS) has been used to measure the low-temperature trapping parameters of defects in indium-doped silicon. Substitutional indium at Ev +0.15 eV, the indium–X center at Ev +0.11 eV, and two deeper indium related centers at Ev +0.31 eV and Ev +0.45 eV were studied. Electric fields have been found to lower the activation energies and increase the emission rates for the substitutional indium and the indium–X center. Theoretical models, including the field effect on the barrier and thermally assisted tunneling, have been used to fit the data. The capture coefficients near liquid-nitrogen temperature have been estimated as being for substitutional indium, C (In) = 7.6×10−9 cm3/sec exp (0.031 eV/kT); for the indium–X center, C(InX) = 7.7×10−8 cm3/sec exp (+0.006 eV/kT); for the Ev +0.31-eV center, C(H1) = 2×10−9 cm3/sec; and for the Ev +0.45-eV center C(H2) = 1.2×10−8 cm3/sec.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1981
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 1973
    In:  Journal of Applied Physics Vol. 44, No. 12 ( 1973-12-01), p. 5402-5410
    In: Journal of Applied Physics, AIP Publishing, Vol. 44, No. 12 ( 1973-12-01), p. 5402-5410
    Abstract: Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G 15 (K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing on these lines are discussed.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1973
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
    Online Resource
    Online Resource
    AIP Publishing ; 2016
    In:  The Journal of Chemical Physics Vol. 145, No. 9 ( 2016-09-07)
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 145, No. 9 ( 2016-09-07)
    Abstract: The phenomenon of electrical conductivity maxima of molten salts versus temperature during orthobaric (closed-vessel) conditions is further examined via ab initio simulations. Previously, in a study of molten BiCl3, a new theory was offered in which the conductivity falloff at high temperatures is due not to traditional ion association, but to a rise in the activation energy for atomic ions hopping from counterion to counterion. Here this theory is further tested on two more inorganic melts which exhibit conductivity maxima: another high-conducting melt (SnCl2, σmax = 2.81 Ω−1 cm−1) and a low-conducting one (HgBr2, σmax = 4.06 × 10−4 Ω−1 cm−1). First, ab initio molecular dynamics simulations were performed and again appear successful in reproducing the maxima for both these liquids. Second, analysis of the simulated liquid structure (radial distributions, species concentrations) was performed. In the HgBr2 case, a very molecular liquid like water, a clear Grotthuss chain of bromide transfers was observed in simulation when seeding the system with a HgBr+ cation and HgBr3− anion. The first conclusion is that the hopping mechanism offered for molten BiCl3 is simply the Grotthuss mechanism for conduction, applicable not just to H+ ions, but also to halide ions in post-transition-metal halide melts. Second, it is conjectured that the conductivity maximum is due to rising activation energy in network-covalent (halide-bridging) melts (BiCl3, SnCl2, PbCl2), but possibly a falling Arrhenius prefactor (collision frequency) for molecular melts (HgBr2).
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 4
    In: Physics of Plasmas, AIP Publishing, Vol. 25, No. 7 ( 2018-07-01)
    Abstract: High-intensity laser facilities, such as the National Ignition Facility (NIF), enable the experimental investigation of plasmas under extreme, high-energy-density conditions. Motivated by validating models for collisional heat-transfer processes in high-energy-density plasmas, we have developed an exploding pusher platform for use at the NIF in the polar-direct-drive configuration. The baseline design employs a 3 mm-diameter capsule, an 18 μm-thick CH ablator, and Ar-doped D2 gas to achieve several keV electron-ion temperature separations with relatively low convergence ratios. In an initial series of shots at the NIF—N160920–003, -005, and N160921–001—the ratio of the laser intensity at different polar angles was varied to optimize the symmetry of the implosion. Here we summarize experimental results from the shot series and present pre- and post-shot analysis. Although the polar-direct-drive configuration is inherently asymmetric, we successfully tuned a post-shot 1D model to a set of key implosion performance metrics. The post-shot model has proven effective for extrapolating capsule performance to higher incident laser drive. Overall, the simplicity of the platform and the efficacy of the post-shot 1D model make the polar-direct-drive exploding pusher platform attractive for a variety of applications beyond the originally targeted study of collisional processes in high-energy-density plasmas.
    Type of Medium: Online Resource
    ISSN: 1070-664X , 1089-7674
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 1472746-8
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  • 5
    Online Resource
    Online Resource
    AIP Publishing ; 2012
    In:  The Journal of Chemical Physics Vol. 136, No. 12 ( 2012-03-28)
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 136, No. 12 ( 2012-03-28)
    Abstract: A new theory is presented to explain the conductivity maxima of molten salts (versus temperature and pressure). In the new theory, conductivity is due to ions hopping from counterion to counterion, and its temperature dependence can be explained with an ordinary Arrhenius equation in which the frequency prefactor A (for hopping opportunities) and activation energy Ea (for hopping) are density dependent. The conductivity maximum is due to competing effects: as density decreases, the frequency of opportunities for hopping increases, but the probability that an opportunity is successfully hopped decreases due to rising Ea caused by the increased hopping distance. The theory is successfully applied to molten bismuth (III) chloride, and supported by density-functional based molecular dynamics simulations which not only reproduce the conductivity maximum, but disprove the long-standing conjecture that this liquid features an equilibrium between BiCl3 molecules, and BiCl2+ and BiCl4− ions that shifts to the left with increasing temperature.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2012
    detail.hit.zdb_id: 1473050-9
    detail.hit.zdb_id: 3113-6
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