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  • AIP Publishing  (4)
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  • AIP Publishing  (4)
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  • 1
    Online Resource
    Online Resource
    Observation of photoelectric-induced microplasma avalanche breakdown in AlGaN ultraviolet photodiode with separate absorption and multiplication structure
    AIP Publishing ; 2023
    In:  Applied Physics Letters Vol. 123, No. 12 ( 2023-09-18)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 123, No. 12 ( 2023-09-18)
    Abstract: Amplification of weak ultraviolet signals has always been a challenging issue to design and fabricate high-performance ultraviolet photodetectors. Here, we observe a distinctive microplasma breakdown behavior in AlGaN-based ultraviolet avalanche photodiodes with artificial mesa architecture. At 107 V breakdown voltage, the photocurrent increases sharply whereas dark current intriguingly remains at the extremely low level of 0.1 nA as the applied voltage increases. Simultaneously, a significant blue luminescence phenomenon is observed at the mesa edge of photodiode at breakdown voltage, indicating the occurrence of microplasma breakdown. Ultimately, the microplasma avalanche photodiode achieves a record-high avalanche gain of 3 × 106 with light–dark current ratio readily exceeding 107. Kelvin probe force microscopy was employed to reveal the physical mechanism of localized avalanche breakdown induced by photoelectric effects and elaborate the microplasma discharge process, which is related to surface states. The unprecedented detection mode of photocurrent triggering avalanche events while remaining low dark current is anticipated to effectively shield the background noise and amplify ultraviolet signals. It is worth further research to explore its possibility on high-sensitivity ultraviolet photodetection.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0155244
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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    Online Resource
  • 2
    Online Resource
    Online Resource
    NiO/AlGaN interface reconstruction and transport manipulation of p-NiO gated AlGaN/GaN HEMTs
    AIP Publishing ; 2021
    In:  Applied Physics Reviews Vol. 8, No. 4 ( 2021-12-01)
    Details
    In: Applied Physics Reviews, AIP Publishing, Vol. 8, No. 4 ( 2021-12-01)
    Abstract: Normally off AlGaN/GaN high electron mobility transistors with a p-type gate are promising for power switching applications, with advantages of low energy consumption and safe operation. In this work, p-NiO is employed as a gate stack, and the interfacial reconstruction and band structure modification at the p-NiO/AlGaN interface have been demonstrated to manipulate channel transport of AlGaN/GaN high electron mobility transistors by post-annealing. In addition to achieving a positive threshold voltage of 0.6 V and a large saturation output current of 520 mA/mm, we found that the gate leakage and On/Off drain current ratio can be improved significantly by more than 104 due to the p-NiO/AlGaN interfacial reconstruction. However, high annealing temperature also results in an increasing ON-resistance and a dramatically increased knee voltage (VK), which can be attributed to the formation of an ultra-thin γ-Al2O3 layer and the substitution of O on N site as a shallow donor at the p-NiO/AlGaN interface confirmed by experimental analyses. Theoretical calculations indicate that such interface reconstruction facilitates an additional potential well at the p-NiO/AlGaN interface to which electrons are spilled out from a two-dimensional electron gas channel under high forward gate voltage, resulting in the increased VK. Finally, an optimized annealing condition was confirmed that can eliminate this increased VK phenomenon and simultaneously remain these significantly improved device performances. These findings provide deep understanding of the performance manipulation of AlGaN high electron mobility transistors, which is very important for engineering the p-NiO/AlGaN interface toward high-performance and stable devices.
    Type of Medium: Online Resource
    ISSN: 1931-9401
    URL: Article
    DOI: 10.1063/5.0059841
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 2265524-4
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  • 3
    Online Resource
    Online Resource
    Do all screw dislocations cause leakage in GaN-based devices?
    AIP Publishing ; 2020
    In:  Applied Physics Letters Vol. 116, No. 6 ( 2020-02-10)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 116, No. 6 ( 2020-02-10)
    Abstract: Screw dislocations are generally considered to be one of the main causes of GaN-based device leakage, but so far, nearly no reports have focused on the effects of open-core screw dislocations on device leakage currents experimentally. In this paper, we use a conductive atomic force microscope to characterize the electronic properties of threading dislocations (TDs) in the GaN layer. The full-core screw dislocations and mixed dislocations are found to provide conductive paths for device leakage currents. In terms of the contribution to device leakage currents, the edge and open-core screw dislocations have smaller effects than the full-core screw dislocations and mixed dislocations. We use isotropic linear elasticity theory and density functional theory calculations to model the core atomic structures of TDs and calculate the corresponding electronic structures. The results show that screw dislocations with full-core structures are found to introduce both deep and shallow energy states within the energy gap dispersedly, while the open-core screw dislocations and the most edge dislocations introduce only shallow energy states. The calculated electronic structures of each type of dislocation are systematically compared and correlated with experimental observations. Our findings demonstrate that full-core screw dislocations and mixed dislocations in the GaN layer have a far more detrimental impact on device leakage than edge and open-core screw dislocations.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.5135960
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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    Online Resource
  • 4
    Online Resource
    Online Resource
    Influence of MoO3 on electrical properties and thermal depolarization of Bi0.5Na0.5TiO3-BaTiO3 lead-free piezoceramics
    AIP Publishing ; 2020
    In:  Journal of Applied Physics Vol. 127, No. 23 ( 2020-06-21)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 127, No. 23 ( 2020-06-21)
    Abstract: In this work, electric properties of undoped and MoO3-doped 0.93Bi0.5Na0.5TiO3-0.07BaTiO3 ceramics (BNT-BT: x mol. % MoO3) are systematically studied. At room temperature, the optimum piezoelectric property (d33 = 177.0 pC/N) was observed in BNT-BT: 0.10Mo ceramics, with remanent polarization (Pr = 32.15 μC/cm2), electromechanical coupling coefficient (kt = 0.578, kp = 0.169, k31 = 0.180), and mechanical quality factor (Qm = 90.3). Mo doping was found to have a positive effect on the depolarization temperature Td, and k31 showed excellent thermal stability at BNT-BT: 0.05Mo ceramics. These findings confirm that Mo doping is an effective method to improve BNT-based lead-free ceramics.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.5143641
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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