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  • 1
    In: Applied Physics Letters, AIP Publishing, Vol. 93, No. 11 ( 2008-09-15)
    Abstract: Phosphorus (P)-doped ZnO thin films were grown by radio-frequency magnetron sputtering to study the microstructural properties of p-type ZnO. As-grown P-doped ZnO, a semi-insulator, was converted to p-type ZnO after being annealed at 800°C in an N2 ambient. X-ray diffraction, secondary-ion-mass spectrometry, and Hall effect measurements indicated that P2O5 phases in as-grown P-doped ZnO disappeared after thermal annealing to form a substitutional P at an O lattice site, which acts as an acceptor in P-doped ZnO. Transmission electron microscopy showed that the formation of stacking faults was facilitated to release the strain in P-doped ZnO during post-thermal annealing.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2008
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    In: Review of Scientific Instruments, AIP Publishing, Vol. 93, No. 9 ( 2022-09-01)
    Abstract: Recent advances in improving the spectroscopic energy resolution in scanning tunneling microscopy (STM) have been achieved by integrating electron spin resonance (ESR) with STM. Here, we demonstrate the design and performance of a homebuilt STM capable of ESR at temperatures ranging from 1 to 10 K. The STM is incorporated with a homebuilt Joule–Thomson refrigerator and a two-axis vector magnet. Our STM design allows for the deposition of atoms and molecules directly into the cold STM, eliminating the need to extract the sample for deposition. In addition, we adopt two methods to apply radio-frequency (RF) voltages to the tunnel junction: the early design of wiring to the STM tip directly and a more recent idea to use an RF antenna. Direct comparisons of ESR results measured using the two methods and simulations of electric field distribution around the tunnel junction show that, despite their different designs and capacitive coupling to the tunnel junction, there is no discernible difference in the driving and detection of ESR. Furthermore, at a magnetic field of ∼1.6 T, we observe ESR signals (near 40 GHz) sustained up to 10 K, which is the highest temperature for ESR-STM measurement reported to date, to the best of our knowledge. Although the ESR intensity exponentially decreases with increasing temperature, our ESR-STM system with low noise at the tunnel junction allows us to measure weak ESR signals with intensities of a few fA. Our new design of an ESR-STM system, which is operational in a large frequency and temperature range, can broaden the use of ESR spectroscopy in STM and enable the simple modification of existing STM systems, which will hopefully accelerate a generalized use of ESR-STM.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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  • 3
    Online Resource
    Online Resource
    AIP Publishing ; 2001
    In:  Applied Physics Letters Vol. 79, No. 12 ( 2001-09-17), p. 1822-1824
    In: Applied Physics Letters, AIP Publishing, Vol. 79, No. 12 ( 2001-09-17), p. 1822-1824
    Abstract: We report a low-resistance thermally stable ohmic contact on p-type GaN using a promising contact scheme of Pd/Ni. Specific contact resistance as low as 5.7×10−5 Ω cm2 was obtained from the Pd (30 Å)/Ni (70 Å) contact annealed at 500 °C under an oxidizing ambient. NiO that formed at the surface prevented Pd atoms from outdiffusing, promoting the formation of Pd gallides, Ga2Pd5 and Ga5Pd. This reaction produces Ga vacancies below the contact, leading to enhancement of the thermal stability as well as reduction of the contact resistivity.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    In: Journal of Applied Physics, AIP Publishing, Vol. 120, No. 8 ( 2016-08-28)
    Abstract: This study investigated which factors decisively influence colloidal nanoparticle (NP) assembly on a self-assembled monolayer (SAM)-patterned substrate. Zirconia (ZrO2) NP assembly on a poly(dimethylsiloxane) (PDMS)-stamped SAM-patterned Au substrate was carried out while the size and surface charge state of the NPs and the substrate wettability were altered. ZrO2 particles with diameters of 350 nm, 560 nm, and 1100 nm were employed to examine the effect of NP size on the assembly. Bare ZrO2 NPs with a negatively charged surface and ZrO2 NPs with a positively charged surface through 3-aminopropyltriethoxysilane encapsulation were prepared for the NP assembly. Moreover, the substrate wettability effect on the NP assembly was evaluated by comparing the assembly on substrates with the PDMS-patterned SAMs of thiols with polar and non-polar functional groups. From the characterization of the number of NPs in a pattern and the effective area of assembled NPs (Aeff), positively charged ZrO2 NP assembly on negatively charged patterns showed the highest number density of particles in a pattern compared with the other combinations in both 350-nm and 560-nm ZrO2 NPs. This observation can be attributed to negatively charged 16-mercaptohexadecanoic acid SAMs having greater polarity (more polar groups) than positively charged 11-amino-1-undecanethiol SAMs within the condition of the colloidal ZrO2 NP assembly.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 5
    In: AIP Advances, AIP Publishing, Vol. 8, No. 2 ( 2018-02-01)
    Abstract: Long silver nanowires (Ag NWs) with lengths of ∼65 μm and aspect ratios as high as 1500 were synthesized using a tetrabutylammonium dichlorobromide (TBADCB) salt-based polyol process. The kinetics of crystal growth was studied using stepwise scanning electron microscopy, X-ray diffraction, and surface Plasmon resonance spectroscopy. The diameters of the Ag NWs were shown to be strongly dependent on the molar concentration of TBADCB/AgNO3. We further demonstrated that the length of the Ag NWs could be controlled by adjusting the reaction temperature at the nucleation step or by varying the stirring speed. NWs with lengths of up to 60 μm and diameters as large as 32 nm were obtained when unidirectional axial stirring was performed at 1000 rpm using a T-shaped impeller, and at an initial nucleation temperature of 20°C. The obtained two-dimensional conducive Ag NW network films exhibited good optical properties, with a low haze of ≤1.0% and 98% transmittance at 60 Ω/sq, similar to the properties of the films compared of 20-nm-diameter Ag NWs (aspect ratio: ∼1000).
    Type of Medium: Online Resource
    ISSN: 2158-3226
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 2583909-3
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  • 6
    In: Review of Scientific Instruments, AIP Publishing, Vol. 86, No. 1 ( 2015-01-01)
    Abstract: A cavity-type beam position monitor (BPM) has been developed for a compact terahertz (THz) free-electron laser (FEL) system and ultra-short pulsed electron Linac system at the Korea Atomic Energy Research Institute (KAERI). Compared with other types of BPMs, the cavity-type BPM has higher sensitivity and faster response time even at low charge levels. When electron beam passes through the cavity-type BPM, it excites the dipole mode of the cavity of which amplitude depends linearly on the beam offset from the center of the cavity. Signals from the BPM were measured as a function of the beam offset by using an oscilloscope. The microtron accelerator for the KAERI THz FEL produces the electron beam with an energy of 6.5 MeV and pulse length of 5 μs with a micropulse of 10-20 ps at the frequency of 2.801 GHz. The macropulse beam current is 40 mA. Because the microtron provides multi-bunch system, output signal would be the superposition of each single bunch. So high output signal can be obtained from superposition of each single bunch. The designed position resolution of the cavity-type BPM in multi-bunch is submicron. Our cavity-type BPM is made of aluminum and vacuum can be maintained by indium sealing without brazing process, resulting in easy modification and cost saving. The resonance frequency of the cavity-type BPM is 2.803 GHz and the cavity-type BPM dimensions are 200 × 220 mm (length × height) with a pipe diameter of 38 mm. The measured position sensitivity was 6.19 (mV/mm)/mA and the measured isolation between the X and Y axis was −39 dB. By measuring the thermal noise of system, position resolution of the cavity-type BPM was estimated to be less than 1 μm. In this article, we present the test results of the S-band cavity-type BPM and prove the feasibility of the beam position measurement with high resolution using this device.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
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  • 7
    In: Applied Physics Letters, AIP Publishing, Vol. 90, No. 4 ( 2007-01-22)
    Abstract: The changes in atomic-layer-deposited HfO2 films on Si and Si1−xGex (x=0.1, 0.2, and 0.3) substrates by postdeposition annealing were studied. The migration of Ge reduced the capacitance equivalent thickness while keeping the leakage current density almost invariant after annealing. High resolution x-ray photoelectron spectroscopy and secondary ion mass spectroscopy analyses confirmed that Ge atoms which had diffused into the HfO2 layer during the deposition were drawn back to the substrate by annealing which was accompanied by the decrease in the interfacial strain energy. A very low interface trap density (1.3×1010cm−2eV−1) was obtained when x=0.3.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2007
    detail.hit.zdb_id: 211245-0
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  • 8
    In: Review of Scientific Instruments, AIP Publishing, Vol. 89, No. 12 ( 2018-12-01)
    Abstract: Time-of-flight-based two-dimensional and three-dimensional light detection and ranging (LiDAR) applications have recently been implemented in several industries because of their high-precision measuring capabilities over long distances in outdoor environments. Avalanche photodetectors (APDs) are commonly used for LiDARs because of their high internal gain that significantly amplifies a measured signal. However, the magnitude of the measured signal changes significantly with temperature variations, owing to the temperature dependent characteristics of the APD. In this study, a temperature compensation method, in which a bias voltage of the APD is adjusted for temperature changes using signal-to-noise ratio feedback control, is proposed to solve the problem. This method has the advantage of a simple hardware configuration, without using a conventionally considered cooler.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
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  • 9
    In: Journal of Applied Physics, AIP Publishing, Vol. 103, No. 8 ( 2008-04-15)
    Abstract: This study examined the chemical interactions between an atomic-layer-deposited (ALD) HfO2 film and strained epitaxial Si1−xGex∕Si (x=0.1,0.2,0.3) substrates during film deposition and postdeposition annealing (PDA), as well as their influence on the electrical properties. The influences of various predeposition surface treatments under O3 (POT) and NH3 (PNT) were also investigated in order to improve the understanding of the chemical and structural changes in thin film systems. Particular focus was made on the migration behavior of Si and Ge in the interface between a HfO2 film and Si1−xGex substrate, which critically affects the capacitance equivalent thickness (CET). The interdiffusion of the substrate elements during ALD and PDA could be controlled by POT and PNT. PNT was effective in reducing the diffusion of both Si and Ge during the ALD and PDA, whereas POT reduced only Si diffusion. The surface treatments reduced the changes in the CET after PDA without any significant increase in the leakage current density. The migration of the substrate elements was traced by secondary ion mass spectroscopy, auger electron spectroscopy, high-resolution transmission microscopy and x-ray photoelectron spectroscopy.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2008
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 10
    Online Resource
    Online Resource
    AIP Publishing ; 2001
    In:  Applied Physics Letters Vol. 78, No. 21 ( 2001-05-21), p. 3265-3267
    In: Applied Physics Letters, AIP Publishing, Vol. 78, No. 21 ( 2001-05-21), p. 3265-3267
    Abstract: InGaN/GaN multiple-quantum-well light-emitting-diode structures utilizing tunnel contact junctions grown by metalorganic chemical vapor deposition have been demonstrated. The p+/n+ GaN tunnel junctions are located in the upper cladding layers of conventional devices, allowing n-type GaN instead of p-type GaN as a top contact layer. Thus, metal ohmic contacts are done at the same time on the top and the lower contact layers. The reverse-biased tunnel contact junction provides lateral current spreading without semitransparent electrode and spatially uniform luminescence exhibiting an improved radiative efficiency. The tunnel contact junction is shown to be an effective method to make possible hole injection via a lateral electron current, with only a small penalty in voltage drop compared to conventional devices.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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