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  • AIP Publishing  (17)
  • 1
    In: Journal of Applied Physics, AIP Publishing, Vol. 104, No. 11 ( 2008-12-01)
    Abstract: A monolithically integrated wavelength-selective photodetector, which consists of an 11.86 μm thick GaAs-based Fabry–Pérot filter and a 3.84 μm thick InP-based p-i-n absorption structure (with a 0.3 μm In0.53Ga0.47As absorption layer), was grown on a Si substrate. A crack-free and high-quality epilayer with an area of 800×700 μm2 was obtained by using midpatterned growth and thermal-cycle annealing. Long dislocations running parallel to the GaAs/Si interface were formed by thermal annealing. This kind of dislocation may effectively alleviate the thermal stress across a large patterned area and be responsible for the crack-free epilayer. A photodetector with a spectral linewidth of 1.1 nm (full width at half maximum) and a quantum efficiency of 9.0% was demonstrated.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2008
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 2006
    In:  Applied Physics Letters Vol. 88, No. 6 ( 2006-02-06)
    In: Applied Physics Letters, AIP Publishing, Vol. 88, No. 6 ( 2006-02-06)
    Abstract: An approach for InP∕GaAs wafer bonding based on thiourea treatment was presented. The bonding energy reaches the InP fracture energy by annealing at 360°C. An In0.53Ga0.47As∕InP multiple quantum well (MQW) structure grown on InP was transferred onto GaAs substrate via the bonding process. X-ray diffraction and photoluminescence reveal that crystal quality of the bonded MQW was preserved. A thin sulfide layer with thickness of about 29nm at the bonding interface was detected. X-ray photoelectron spectroscopy analyses indicate that the formation of In–S and Ga–S bond at thiourea treated surface is responsible for the strong fusion obtained at such low temperature.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2006
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    AIP Publishing ; 2014
    In:  Applied Physics Letters Vol. 104, No. 6 ( 2014-02-10)
    In: Applied Physics Letters, AIP Publishing, Vol. 104, No. 6 ( 2014-02-10)
    Abstract: The light trapping properties of InP/InGaAs/InP double-heterostructure nanopillar arrays (DH-NPAs) solar cells have been theoretically investigated. The influence of the geometric parameters on the optical absorption of DH-NPAs has been thoroughly analyzed by using rigorous coupled wave analysis algorithm and finite element method. The optical absorption enhancement of DH-NPAs as compared to InP/InGaAs/InP double-heterostructure nanowire arrays (DH-NWAs) in the whole wavelength regime has been demonstrated. The short-circuit current of DH-NPAs with the optimized design can achieve 61.3 mA/cm2, which is 15% higher than that of DH-NWAs with the same geometric configurations, and three times higher than that of thin-film layer with the same thickness. Meanwhile, the absorption profiles at different wavelength and angle-dependant optical properties of DH-NPAs are also evaluated.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    In: Journal of Applied Physics, AIP Publishing, Vol. 113, No. 11 ( 2013-03-21)
    Abstract: Various surface morphologies of hierarchical GaAs/InAs core/shell heterostructure were obtained by carefully tuning the growth parameters. The growth of the InAs shell around the surface of the GaAs core could be evolved from 2D mode to 3D mode as the variation of the growth parameters. As a consequence, the morphology of the InAs shell can systematically change from the uniformly coated cylindrical to isolated islands and eventually nanorings. The isolated nanoring structure can be formed innovatively by coalescence of the islands without the assistance of twin-induced concave sites. Different types of dislocations in the shell structure, which could result from the different behaviors of misfit-stress relaxation processes, were observed during these two growth modes. The mechanisms of the morphological evolution are also discussed in detail.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 5
    Online Resource
    Online Resource
    AIP Publishing ; 2007
    In:  Applied Physics Letters Vol. 90, No. 16 ( 2007-04-16)
    In: Applied Physics Letters, AIP Publishing, Vol. 90, No. 16 ( 2007-04-16)
    Abstract: An approach for InP∕Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the InP fracture energy by annealing at 280°C. An In0.53Ga0.47As∕InP multiple-quantum-well (MQW) structure grown on InP was transferred onto Si substrate via the bonding process. X-ray diffraction and photoluminescence reveal that crystal quality of the bonded MQW was preserved. A thin B2O3–POx–SiO2 oxide layer of about 28nm thick at the bonding interface was detected. X-ray photoelectron spectroscopy and Raman analyses indicate that the formation of oxygen bridging bonds by boride treatment is responsible for the strong fusion obtained at such low temperature.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2007
    detail.hit.zdb_id: 211245-0
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  • 6
    In: Physics of Fluids, AIP Publishing, Vol. 34, No. 9 ( 2022-09-01)
    Abstract: Electrohydrodynamic (EHD) jetting is a promising technique with ultra-high resolution, broad compatibility with various inks, and tunable printing modes. However, it suffers from poor efficiency, which urgently calls for an addressable multi-nozzle printhead. Unlike traditional EHD printing which treats the liquid inside the printhead as an equal potential body, this work has proposed to realize addressable jetting by tuning the potential drop between the non-triggered nozzles (connected to a resistor and then grounded) and the triggered nozzles (connected to a high-voltage) through voltage division principle. We present an equivalent circuit model to predict the potential drop within the printhead, which largely depends on the liquid conductivity, channel character, and external auxiliary resistors, and these results match well with experiments and simulations. Besides, we further investigate the jet deflection behavior of the printhead, finding that 1.5 & lt; H/dn & lt; 3 (the ratio of printing height to the nozzle diameter) and 0.6 & lt; k & lt; 0.8 (the ratio of the non-triggered nozzles to the triggered nozzles) are preferred working area for addressable and precise EHD printing. This addressable design does not need a complex extractor underneath the nozzle, which is promising for future high-density and large-scale EHD printheads.
    Type of Medium: Online Resource
    ISSN: 1070-6631 , 1089-7666
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 1472743-2
    detail.hit.zdb_id: 241528-8
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  • 7
    In: Physics of Fluids, AIP Publishing, Vol. 33, No. 8 ( 2021-08-01)
    Abstract: We investigate multi-mode oscillation and ejection behavior in pulsed electrohydrodynamic (EHD) printing in this paper. The results show that multi-mode oscillation is determined by the damping ratio of the meniscus, while the phase difference between meniscus oscillation and the electric field governs whether jetting can occur. High-order-mode jetting can occur around the corresponding resonant frequency of a low damping ratio system. This enhances the frequency limit to approximately 2.62 times that of traditional pulsed EHD printing, providing an efficient approach to high-frequency EHD printing.
    Type of Medium: Online Resource
    ISSN: 1070-6631 , 1089-7666
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 1472743-2
    detail.hit.zdb_id: 241528-8
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  • 8
    In: AIP Advances, AIP Publishing, Vol. 8, No. 8 ( 2018-08-01)
    Abstract: The thermal stress due to the thermal expansion mismatch could induce crystallographic defects such as buckling and cracking and degrade device performance. In this paper, the thermal stress distribution in a laser array structure selectively grown on V-groove-patterned Si substrates was investigated by two-dimension finite-element method. Surprisingly, unexpected results are observed that the top of the InGaAs active layer and the most region of the InP cap layer are in compression, which is far different from the thermal stress distribution in planar structures. Two mechanisms have been proposed and modeled to explain the difference—(i) the width of uncoalesced layers is smaller than that of the Si substrate, which causes thermal stress to change in epitaxial layers, and (ii) thermal stress in the InGaAs and InP layers is affected by the V-groove structure. The results show that whether or not the epitaxial layers are coalesced has significant effect on the thermal stress distribution. The effect of the height of the V-groove, the height and the width of the SiO2 mask on the thermal stress distribution was also studied. It is found that the height of V-groove and the height of SiO2 mask play a critical role in the stress distribution. These findings are useful for the optimal designs for the laser array and provide an important step towards the realization of photonic integration circuits on silicon.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 2583909-3
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  • 9
    In: Review of Scientific Instruments, AIP Publishing, Vol. 91, No. 4 ( 2020-04-01)
    Abstract: The Planck constant, with its mathematical symbol h, is a fundamental constant in quantum mechanics that is associated with the quantization of light and matter. It is also of fundamental importance to metrology, such as the definition of ohm and volt and the latest definition of kilogram. One of the first measurements to determine the Planck constant is based on the photoelectric effect; however, the values thus obtained so far have exhibited a large uncertainty. The accepted value of the Planck constant, 6.626 070 15 × 10−34 J s, is obtained from one of the most precise methods, the Kibble balance, which involves the quantum Hall effect, the Josephson effect, and the use of the international prototype of the kilogram or its copies. Here, we present a precise determination of the Planck constant by modern photoemission spectroscopy technique. Through the direct use of Einstein’s photoelectric equation, the Planck constant is determined by accurately measuring the energy position of the gold Fermi level using light sources with various photon wavelengths. The precision of the Planck constant as measured in this work, 6.626 10(13) × 10−34 J s, is improved by four to five orders of magnitude from the previous photoelectric effect measurements. We propose that this direct method of photoemission spectroscopy has potential to further increase its measurement precision of the Planck constant to be comparable to the most accurate methods available at present.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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  • 10
    Online Resource
    Online Resource
    AIP Publishing ; 2015
    In:  Applied Physics Letters Vol. 106, No. 20 ( 2015-05-18)
    In: Applied Physics Letters, AIP Publishing, Vol. 106, No. 20 ( 2015-05-18)
    Abstract: The coalescence of selective area grown GaAs regions has been performed on patterned 1.8 μm GaAs buffer layer on Si via metal-organic chemical vapor deposition. We propose a promising method of three-stage epitaxial lateral overgrowth (ELO) to achieve uniform coalescence and flat surface. Rough surface caused by the coalescence of different growth fronts is smoothened by this method. Low root-mean-square surface roughness of 6.29 nm has been obtained on a 410-nm-thick coalesced ELO GaAs layer. Cross-sectional transmission electron microscope study shows that the coalescence of different growth fronts will induce some new dislocations. However, the coalescence-induced dislocations tend to mutually annihilate and only a small part of them reach the GaAs surface. High optical quality of the ELO GaAs layer has been confirmed by low temperature (77 K) photoluminescence measurements. This research promises a very large scale integration platform for the monolithic integration of GaAs-based device on Si.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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