In:
Journal of Applied Physics, AIP Publishing, Vol. 88, No. 4 ( 2000-08-15), p. 1831-1837
Abstract:
As the transistors continue to scale down, the characteristics of high-temperature-sputtered Co/Si1−xGex junction have received lots of attention because of its potential applications to heterojunction bipolar transistors. In this study, we have fabricated Co/Si1−xGex junction using room-temperature and high-temperature (i.e., at 450 °C) sputtered Co on top of strained Si0.86Ge0.14 and Si0.91Ge0.09 layers prepared by ultrahigh vacuum chemical molecular epitaxy. The relative composition of Ge in Ge-rich Si1−zGez precipitate and the solid solution of ternary phase silicide of Co–Si–Ge system were compared between room-temperature and high-temperature sputtered samples. We found that the high-temperature-sputtered samples are more effective in inhibiting lattice relaxation, which would be beneficial for manufacturing metal silicide/Si1−xGex structure devices. Mechanisms were proposed to explain the large difference between the room-temperature and high-temperature sputtered samples. It is believed that the mixed Co–Si–Ge solution on high-temperature-sputtered samples is responsible for the different silicidation behaviors.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2000
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
Permalink