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  • AIP Publishing  (3)
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  • AIP Publishing  (3)
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  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 1962
    In:  Journal of Applied Physics Vol. 33, No. 11 ( 1962-11-01), p. 3201-3208
    In: Journal of Applied Physics, AIP Publishing, Vol. 33, No. 11 ( 1962-11-01), p. 3201-3208
    Abstract: The spectral character of the stimulated emission from ruby has been investigated; we found that the zero-field splitting (0.38 cm−1) of the A42 ground level and the cavity optical length and its reflectivity determine the spectral character of this emission. At 300°K the system is induced into oscillation in a number of cavitymodes separated by Δv̄ = (2lε12)−1, where l is the length of the resonator and ε12 is the index of refraction for the ordinary ray. At T≅80°K the Ē(2E) → ±32(A2) and the Ē(2E) → ±12(4A2) transitions were identified in the stimulated emission spectrum. Each can oscillate in an axial cavity mode (or modes) plus an off-axis mode at the center of the transition. At 4.2°K the system oscillates in off-axis modes, unless the length of the cavity l is such that it has axial resonances coincident with the transition frequencies. An analysis of the temperature dependence of the oscillation threshold for the separate transitions is presented and is compared with the observed behavior.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1962
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 1987
    In:  Journal of Applied Physics Vol. 62, No. 10 ( 1987-11-15), p. 4187-4191
    In: Journal of Applied Physics, AIP Publishing, Vol. 62, No. 10 ( 1987-11-15), p. 4187-4191
    Abstract: A dense electron-hole plasma is created in Al0.52Ga0.48As using picosecond excitation with high excess energy. Its properties are studied by time-resolved photoluminescence and transient transmission spectroscopy. Simultaneous emission out of the indirect X and the direct Γ band is observed. Alloy disorder strongly influences the bimolecular recombination by allowing for quasidirect transitions and stimulated emission out of the indirect X band. The electron-hole plasma, whose electrons reside mainly in the X valleys, causes strong optical nonlinearities at the direct absorption edge. A persistent absorption bleaching and large induced refractive-index changes due to band filling of the valence band and induced absorption due to band-gap renormalization are observed.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1987
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
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  • 3
    Online Resource
    Online Resource
    AIP Publishing ; 1982
    In:  Applied Physics Letters Vol. 41, No. 7 ( 1982-10-01), p. 633-635
    In: Applied Physics Letters, AIP Publishing, Vol. 41, No. 7 ( 1982-10-01), p. 633-635
    Abstract: Low-noise GaAs metal-semiconductor field-effect transistors (MESFET’s) have been made using molecular beam epitaxy. A noise figure of 1.47 dB with 9.9-dB associated gain has been achieved at 12 GHz, with a 0.6-μm gate length by 300-μm gate width FET device. These are the best results yet reported for low-noise molecular beam epitaxial (MBE) GaAs FET’s, and comparable to the best performance devices made with vapor phase epitaxy and ion implantation. Equivalent circuit elements have been evaluated in an effort to understand the critical parameters necessary to achieve these results.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1982
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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