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  • AIP Publishing  (36)
Materialart
Verlag/Herausgeber
  • AIP Publishing  (36)
Sprache
Erscheinungszeitraum
Fachgebiete(RVK)
  • 1
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2009
    In:  The Journal of Chemical Physics Vol. 130, No. 4 ( 2009-01-28)
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 130, No. 4 ( 2009-01-28)
    Kurzfassung: A layered cobalt oxide (Ca0.85OH)1.16CoO2 was prepared at low temperature by hydrothermal process and characterized by powder x-ray diffraction, Fourier transform infrared, and scanning electron microscopy. The results showed that plate image powders could be obtained at 453 K for 12 h. The electronic calculation of the band structure and density of states revealed that (Ca0.85OH)1.16CoO2 is a direct-gap semiconductor material and the conductive model is d-d transition of cobalt. The electrical conductivity, Seebeck coefficient, and thermal conductivity of (Ca0.85OH)1.16CoO2 were measured from 290 to 573 K. It was found that the oxide behaves as p-type material in the temperature range measured and there is an M-I transition near 370 K. The ZT increases with the increase in temperature, and the maximum value of 0.02 is obtained at 573 K, indicating (Ca0.85OH)1.16CoO2 is a promising thermoelectric oxide candidate at middle temperature usage.
    Materialart: Online-Ressource
    ISSN: 0021-9606 , 1089-7690
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2009
    ZDB Id: 3113-6
    ZDB Id: 1473050-9
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 2
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2007
    In:  Journal of Applied Physics Vol. 101, No. 3 ( 2007-02-01)
    In: Journal of Applied Physics, AIP Publishing, Vol. 101, No. 3 ( 2007-02-01)
    Kurzfassung: The influence of ramp-up time of barrier growth temperature on optical properties is investigated for InGaN∕GaN quantum wells deposited on sapphire substrate by metal organic chemical vapor deposition. Three ramp-up times are used from the low and high growth temperatures for the well and barrier, respectively. The results indicate that increasing the ramp-up time leads to a blueshift of the photoluminescence (PL) peak position and a broadening of the PL emission linewidth. Similarly, “S-shaped” temperature dependences of the PL peak energy are observed in all the samples. However, very different temperature dependences of PL linewidth, such as the conventional shaped, “U-shaped,” and S-shaped, are observed in the samples with different ramp-up time. These effects are attributed to the redistribution of the In-rich clusters in the wells. Small quantum-dot-like In-rich clusters with high density are considered to be formed in the wells for the sample with a long ramp-up time, leading to the unconventional PL linewidth behavior and enhanced internal quantum efficiency.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2007
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 3
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2007
    In:  Applied Physics Letters Vol. 91, No. 16 ( 2007-10-15)
    In: Applied Physics Letters, AIP Publishing, Vol. 91, No. 16 ( 2007-10-15)
    Kurzfassung: White light-emitting InGaN∕GaN diode with an InGaN underlying layer grown on the (0001) sapphire substrate was fabricated by low pressure metal-organic vapor phase epitaxy. The electroluminescence measurements show that the emitted white light is composed of blue and yellow lights, centered at around 440 and 570nm, respectively, for an injection current of 20mA. Cross-sectional transmission electron microscopy reveals that In-rich quantum dots were formed in InGaN wells due to phase separation of indium. It is suggested that the yellow and blue lights come from In-rich quantum dots and the low-indium regions, respectively, in InGaN quantum wells.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2007
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
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  • 4
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2007
    In:  Applied Physics Letters Vol. 91, No. 6 ( 2007-08-06)
    In: Applied Physics Letters, AIP Publishing, Vol. 91, No. 6 ( 2007-08-06)
    Kurzfassung: Tunneling-assisted carrier transfer in coupled double InGaN∕GaN quantum wells (QWs) has been studied by temperature-dependent photoluminescence (PL) at varied excitation density. It is found that the carriers captured by the wide (“deep”) well are efficiently transferred to the adjacent narrow (“shallow”) one by resonant tunneling, which results in anomalous temperature dependence of PL intensity and significantly enhanced luminescent efficiency for the narrow well. This is disparate from those conventional tunneling-assisted behaviors in coupled double QWs constructed by zinc-blende materials without polarization effect, where the carriers are always tunneling from the narrow (“shallow”) well to the wide (“deep”) one.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2007
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 5
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2009
    In:  Applied Physics Letters Vol. 94, No. 11 ( 2009-03-16)
    In: Applied Physics Letters, AIP Publishing, Vol. 94, No. 11 ( 2009-03-16)
    Kurzfassung: Light emission from green to white in a single-chip light emitting diode is modulated by adjusting the strain in InGaN underlying layer (UL) embedded below an active layer of InGaN/GaN multiple quantum wells. Transmission electron microscopy combined with x-ray reciprocal space mapping reveals that indium phase separation in InGaN quantum well active layer is enhanced by using a partly relaxed InGaN UL and In-rich quantum dots with different size and indium composition are formed. They emit multicolor lights whose mixing produces white light. Quality of the white light could be controlled by modulation on relaxation degree of the InGaN UL.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2009
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 6
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2017
    In:  Applied Physics Letters Vol. 110, No. 9 ( 2017-02-27)
    In: Applied Physics Letters, AIP Publishing, Vol. 110, No. 9 ( 2017-02-27)
    Kurzfassung: Due to the time reversal symmetry, the metallic surface of the topological insulator (TI) survives and results in the resistivity plateau at low temperature, which is the transport signature of the metallic surface state. Such a universal character has been observed in many materials, such as Bi2Te2Se, SmB6, and so on. Recently, a similar behavior has also been found in the possible topological semimetal LaSb/Bi and the metallic compounds Nb/TaAs2. Herein, we have mainly explored the resistivity plateau and the magnetoresistance (MR) of TaTe4 single crystal with the charge density wave (CDW) transition temperature TCDW = 475 K. There are some interesting observations: (i) The large MR (MR is about 1200% in a magnetic field 16 T at T = 2 K) is observed at low temperature; (ii) A field-induced universal TI resistivity with a plateau at roughly T = 10 K and high quantum mobility of carriers in the plateau region are present; (iii) Quantum oscillations with the angle dependence of a two-dimensional Fermi surface are shown. Owing to the CDW character that existed in TaTe4, it represents an ideal system to investigate the relationship between the CDW and the topological physics.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2017
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 7
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2003
    In:  Applied Physics Letters Vol. 83, No. 14 ( 2003-10-06), p. 2958-2960
    In: Applied Physics Letters, AIP Publishing, Vol. 83, No. 14 ( 2003-10-06), p. 2958-2960
    Kurzfassung: Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diodes is reported. The devices were fabricated in a mesa-type structure, with a silicon oxide layer on the top for surface/sidewall passivation. Different passivation processes were employed. We found that the integrated electroluminescence intensities were relatively less sensitive to temperature, persisting at nearly the same intensity up to RT. The fabricated device shows an internal quantum efficiency of about 0.015% at RT. The improved emission property is attributed to the reduced nonradiative recombination centers due to the surface passivation and thermal treatment.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2003
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 8
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2010
    In:  Journal of Applied Physics Vol. 107, No. 7 ( 2010-04-01)
    In: Journal of Applied Physics, AIP Publishing, Vol. 107, No. 7 ( 2010-04-01)
    Kurzfassung: The fundamental of the generation and propagation of the atmospheric pressure nonequilibrium plasma jets has recently attracted significant interests. In this paper, investigations on the effects of the parameters of the pulsed dc voltages on the optical emission intensity of the plasma jet and the bullet propagation behavior are carried out based on the temporal-spatial resolved optical emission spectroscopy measurements and the high-speed photography. It is found that, with the increase in the applied voltage, the bullet propagates out from the nozzle earlier and accelerates to higher peak-velocities. The increase in the pulse frequency exerts no significant influences on the optical emission of the plasma jet and the bullet propagation velocity. But it can induce the bullet propagates out from the nozzle earlier. Besides, it is interesting to notice that, with the increase in the pulse width in the beginning, the bullet propagates out from the nozzle with longer delay time. However, when the pulse width is increased to be more than 100 μs, the delay time of the bullet propagating out from the nozzle becomes much shorter. On the other hand, with the increase in the pulse width, the optical emission intensity of the plasma jet drops and the maximum bullet velocity decreases too. Detailed analysis shows that it may be due to the accumulation of the charges and radicals, which can shorten the prebreakdown of the discharge inside the syringe and result in the bullet propagating out earlier from the nozzle.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2010
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 9
    Online-Ressource
    Online-Ressource
    AIP Publishing ; 2018
    In:  Applied Physics Letters Vol. 112, No. 19 ( 2018-05-07)
    In: Applied Physics Letters, AIP Publishing, Vol. 112, No. 19 ( 2018-05-07)
    Kurzfassung: The optical magneto-electric (OME) effect has been widely investigated in magnetic materials, but obtaining the large and tunable OME effect is an ongoing challenge. We here design a tri-color superlattice composed of manganese oxides, Pr0.9Ca0.1MnO3, La0.9Sr0.1MnO3, and La0.9Sb0.1MnO3, where the space-inversion and time-reversal symmetries are broken. With the aid of the grating structure, the OME effect for near-infrared light in tri-color superlattices is investigated systematically through the Bragg diffraction method. The relative change of diffracted light intensity of the order n = ±1 has a strong dependence on the magnetization and polarization of the tri-color superlattice, whether the superlattice is irradiated in reflection or transmission geometries. Otherwise, the relative change of diffracted light intensity increases with the increase in the superlattice period and with the decrease in the grating period. The maximum relative change of diffracted light intensity in tri-color superlattices with the grating structure patterned is as large as 8.27%. These results pave the way for designing next-generation OME devices based on manganese oxides.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2018
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 10
    In: Applied Physics Letters, AIP Publishing, Vol. 108, No. 16 ( 2016-04-18)
    Kurzfassung: Two-dimensional transition-metal dichalcogenide (TMDs) MoTe2 has attracted much attention due to its predicted Weyl semimetal state and a quantum spin Hall insulator in bulk and monolayer form, respectively. We find that the superconductivity in MoTe2 single crystal can be greatly enhanced by the partial substitution of the Te ions by the S ones. The maximum superconducting temperature TC of MoTe1.8S0.2 single crystal is about 1.3 K. Compared with the parent MoTe2 single crystal (TC = 0.1 K), nearly 13-fold in TC is improved in the MoTe1.8S0.2 one. The superconductivity has been investigated through the resistivity and magnetization measurements. MoTe2−xSx single crystals belong to weak coupling superconductors and the improvement of the superconductivity may be related to the enhanced electron-phonon coupling induced by the S-ion substitution. A dome-shaped superconducting phase diagram is obtained in the S-doped MoTe2 single crystals. MoTe2−xSx materials may provide a new platform for our understanding of superconductivity phenomena and topological physics in TMDs.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2016
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
    Standort Signatur Einschränkungen Verfügbarkeit
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