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  • 1
    Online-Ressource
    Online-Ressource
    High sensitivity stretched-abrupt-tapered Mach-Zehnder interferometer with optical attractive force for active microsensing applications
    AIP Publishing ; 2013
    In:  Applied Physics Letters Vol. 102, No. 17 ( 2013-04-29)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 102, No. 17 ( 2013-04-29)
    Kurzfassung: We demonstrate micro tapered fiber Mach-Zehnder interferometer with one of the two abrupt tapers is stretched and thinned to a diameter of 3.64 μm whereas the other one keeps its diameter of around 45 μm. The stretched and thinned abrupt taper can enlarge the optical path length difference between core and cladding modes to lead to a narrower free spectral range. The significantly exposed evanescent field can generate the optical attractive force to attract microparticles and can even substantially change the properties of external materials through photothermal effect when an optical power of up to 116 mW is launched.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4803668
    RVK:
    UA 1000
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2013
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
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  • 2
    Online-Ressource
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    Comparison on the effect of (La0.5Sr0.5)MnO3 and (La0.5Sr0.5)CoO3 buffer layers on fatigue properties of (Pb0.6Sr0.4)TiO3 thin films prepared by pulsed laser deposition
    AIP Publishing ; 2000
    In:  Journal of Applied Physics Vol. 87, No. 12 ( 2000-06-15), p. 8695-8699
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 87, No. 12 ( 2000-06-15), p. 8695-8699
    Kurzfassung: The fatigue properties of (Pb0.6Sr0.4)TiO3 (PSrTO) thin films deposited using (La0.5Sr0.5)MnO3 (LSMO) materials as buffer layer were compared with those of the films grown using (La0.5Sr0.5)CoO3 (LSCO) materials as buffer layer. The extent of degradation induced by polarization switching for 1×1010 cycles with 210 kV/cm maximum field, which is four times of coercive field (Ec), is less pronounced for PSrTO/LSMO/Pt(Si) thin films than that for PSrTO/LSCO/Pt(Si) films. This phenomenon is ascribed to the smaller strain induced in PSrTO/LSMO/Pt(Si) materials. Moreover, the pulse response testing indicates that the degradation of the films mainly occurs at PSrTO-to-LSMO (or PSrTO-to-LSCO) interface.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.373598
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2000
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
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  • 3
    Online-Ressource
    Online-Ressource
    Bias-enhanced nucleation and growth processes for improving the electron field emission properties of diamond films
    AIP Publishing ; 2012
    In:  Journal of Applied Physics Vol. 111, No. 5 ( 2012-03-01)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 111, No. 5 ( 2012-03-01)
    Kurzfassung: The evolution of diamond films in bias-enhanced-nucleation (BEN) and bias-enhanced-growth (BEG) processes was systematically investigated. While the BEN process can efficiently form diamond nuclei on the Si substrates, BEG with large enough applied field ( & gt; –400 V) and for sufficiently long periods ( & gt;60 min) was needed to develop proper granular structure for the diamond films so as to enhance the electron field emission (EFE) properties of the films. For the films BEG under −400 V for 60 min (after BEN for 10 min), the EFE process can be turned on at a field as small as 3.6 V/μm, attaining a EFE current density as large as 325 μA/cm2 at an applied field of 15 V/μm. Such an EFE behavior is even better than that of the ultrananocrystalline diamond films grown in CH4/Ar plasma. Transmission electron microscopic examination reveals that the prime factor enhancing the EFE properties of these films is the induction of the nano-graphite filaments along the thickness of the films that facilitates the transport of electrons through the films.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3687918
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2012
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
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  • 4
    Online-Ressource
    Online-Ressource
    Modification of ultrananocrystalline diamond film microstructure via Fe-coating and annealing for enhancement of electron field emission properties
    AIP Publishing ; 2012
    In:  Journal of Applied Physics Vol. 112, No. 3 ( 2012-08-01)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 112, No. 3 ( 2012-08-01)
    Kurzfassung: The interaction between Fe-coatings and ultrananocrystalline diamond (UNCD) films during annealing was investigated in detail using transmission electron microscopy. The thin Fe-coating first formed nanosized Fe-clusters and then catalytically dissociated the diamond, re-precipitating carbon to form nanosized graphite clusters. These clusters formed conducting networks that facilitated electron transport and greatly improved the electron field emission (EFE) properties of the UNCD films. The extent of enhancement varied markedly with annealing temperature and atmosphere. For H2-annealed films, EFE behavior was optimized by annealing at 900 °C. EFE was turned on at (E0)H2 = 1.2 V/μm, attaining EFE current density of (Je)H2 = 772.0 μA/cm2 at an applied field of 8.8 V/mm. These characteristics were superior to those of UNCD films NH3-annealed at 850 °C. The inferior EFE properties for the NH3-annealed samples were attributed to reaction of NH3 with the hydrocarbon phase that encapsulated the nanosized diamond grains, hindering Fe–diamond interaction.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4739772
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2012
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
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  • 5
    Online-Ressource
    Online-Ressource
    Microstructure evolution and the modification of the electron field emission properties of diamond films by gigaelectron volt Au-ion irradiation
    AIP Publishing ; 2011
    In:  AIP Advances Vol. 1, No. 4 ( 2011-12-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 1, No. 4 ( 2011-12-01)
    Kurzfassung: The effect of 2.245 GeV Au-ion irradiation and post-annealing processes on the microstructure and electron field emission (EFE) properties of diamond films was investigated. For the microcrystalline diamond (MCD) films, Au-ion irradiation with a fluence of approximately 8.4×1013 ions/cm2 almost completely suppressed the EFE properties of the films. Post-annealing the Au-ion irradiated MCD films at 1000°C for 1 h effectively restored these properties. In contrast, for ultra-nanocrystalline diamond (UNCD) films, the Au-ion irradiation induced a large improvement in the EFE properties, and the post-annealing process slightly degraded the EFE properties of the films. The resulting EFE behavior was still better than that of pristine UNCD films. TEM examination indicated that the difference in Au-ion irradiation/post-annealing effects on the EFE properties of the MCD and UNCD films is closely related to the different phase transformation process involved. This difference is dependent on the different granular structures of these films. The MCD films with large-grain microstructure contain very few grain boundaries of negligible thickness, whereas the UNCD films with ultra-small-grain granular structure contain abundant grain boundaries of considerable thickness. Au-ion irradiation disintegrated the large grains in the MCD films into small diamond clusters embedded in an amorphous carbon (a-C) matrix that suppressed the EFE properties of the MCD films. In contrast, the Au-ion irradiation insignificantly altered the crystallinity of the grains of the UNCD films but transformed the grain boundary phase into nano-graphite, enhancing the EFE properties. The post-annealing process recrystallized the residual a-C phase into nano-graphites for both films.
    Materialart: Online-Ressource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.3651462
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2011
    ZDB Id: 2583909-3
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  • 6
    Online-Ressource
    Online-Ressource
    Effect of gigaelectron volt Au-ion irradiation on the characteristics of ultrananocrystalline diamond films
    AIP Publishing ; 2010
    In:  Journal of Applied Physics Vol. 108, No. 12 ( 2010-12-15)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 108, No. 12 ( 2010-12-15)
    Kurzfassung: The effect of 2.245 GeV Au-ion irradiation/postannealing processes on the electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films was investigated. Au-ion irradiation with a fluence of around 8.4×1013 ions/cm2 is required to induce a large improvement in the EFE properties of the UNCD films. Postannealing the Au-ion irradiated films at 1000 °C for 1 h slightly degraded the EFE properties of the films but the resulting EFE behavior was still markedly superior to that of pristine UNCD films. Transmission electron microscopy examinations revealed that the EFE properties of the UNCD films are primarily improved by Au-ion irradiation/postannealing processes because of the formation of nanographites along the trajectory of the irradiating ions, which results in an interconnected path for electron transport. In contrast, the induction of grain growth process due to Au-ion irradiation in UNCD films is presumed to insignificantly degrade the EFE properties for the films as the aggregates are scarcely distributed and do not block the electron conducting path.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3524541
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2010
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
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  • 7
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    Composition dependence of the microspectroscopy of Cr ions in double-clad Cr:YAG crystal fiber
    AIP Publishing ; 2006
    In:  Journal of Applied Physics Vol. 99, No. 9 ( 2006-05-01)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 99, No. 9 ( 2006-05-01)
    Kurzfassung: We have demonstrated the use of microspectroscopy for measuring the Cr3+ and Cr4+ fluorescence spectra in double-clad Cr:YAG crystal fiber. The emission spectra of Cr3+ and Cr4+ are detected from core and inner cladding. The Cr3+ spectrum in the inner cladding shows a broad-band emission from 650to950nm, while the emission of Cr4+ occurs in the range of 1.15–1.55μm with a peak around 1.22μm. The characteristic of Cr ion at high-field sites shows a narrow-band emission (E2→A24 for Cr3+; E1→A23 for Cr4+), whereas that at low-field sites shows a broad-band emission (T24→A24 for Cr3+; T23→A23 for Cr4+). The emission intensity ratio of high-field sites to low-field sites in the inner cladding with different compositions has been investigated. It varies from 20% to 29% for Cr3+ and from 7.1% to 11.3% for Cr4+ when the concentration of SiO2 increases from 26.9to43.0wt%.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.2196220
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2006
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
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  • 8
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    Online-Ressource
    Passive microscopic fluidic diodes using asymmetric channels
    AIP Publishing ; 2019
    In:  AIP Advances Vol. 9, No. 8 ( 2019-08-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 9, No. 8 ( 2019-08-01)
    Kurzfassung: In this paper, we propose a passive microscopic fluidic diodes with no moving parts for simple fluids using asymmetric channel structures. Finite element simulations demonstrate that the fluidic diode conducts water flows preferentially in one forward direction while blocks flows in the reverse direction in a wide pressure range. The exceptional rectification performance is owing to the anisotropic direction-dependent activation pressures. In the forward direction, the activation pressure is small, which is controlled by the infiltration pressure of the small channel. In the backward direction, the activation pressure is large due to the high release pressure at the channel exit. The effective working pressure range for the fluidic diode can be flexibly adjusted by modifying the channel size or the surface property. Furthermore, we create a microfluidic diode fabricated on silicon membranes using laser direct writing. The diode achieves flow rectifications in a certain pressure range, which confirms the underlying rectification mechanisms. This work provides a novel strategy for flow control or logic computations in integrated micro- and nanofluidic systems.
    Materialart: Online-Ressource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.5115216
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2019
    ZDB Id: 2583909-3
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