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  • AIP Publishing  (53)
  • 1
    Online Resource
    Online Resource
    Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers
    AIP Publishing ; 2005
    In:  Applied Physics Letters Vol. 86, No. 14 ( 2005-04-04)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 86, No. 14 ( 2005-04-04)
    Abstract: We report on deep ion-implantation of sulfur into InP substrates to replace the epitaxial subcollector layer of double-heterojunction bipolar transistors. Using optimized implantation conditions of 350keV energy and 1×1015cm−2 dose, we achieved a subcollector sheet resistance of 15Ω∕square. Under well-controlled regrowth conditions a root-mean-square roughness of 12Å is measured from DHBT epitaxial layers grown on implanted InP substrates, comparable to DHBT epitaxial layers grown on n+ epiready unimplanted substrates. We observe a pronounced increase in surface roughness of epitaxial layer beyond a threshold ion dose, depending on implantation energy. Large-area DHBT devices result with sulfur-ion implanted subcollector shows similar characteristics compared to devices fabricated on n+-doped InP substrates.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1891270
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2005
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    On-chip monolithic wide-angle field-of-view metalens based on quadratic phase profile
    AIP Publishing ; 2020
    In:  AIP Advances Vol. 10, No. 11 ( 2020-11-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 10, No. 11 ( 2020-11-01)
    Abstract: With the rapid development of integrated optics, bulky and curved traditional lenses cannot meet the requirements of on-chip optical systems. Alternatively, the metalenses based on the artificial subwavelength structure possess ultra-thin and lightweight characteristics, providing a potential candidate for on-chip optical systems. Nonetheless, most metalenses have a limited field-of-view (FOV) due to the prevalence of severe off-axis aberrations. In this work, we propose and design an on-chip metalens with wide FOV based on the quadratic phase. The metalens modulates the phase of the incident light with different lengths of gold nano-bands placed on the silicon-on-insulator substrate; thus, the quadratic distribution of the phase of the output light can be achieved by shifting the lengths of gold nano-bands and the output light is focused. The metalens can be focused on a large angle (∼120°, ranging from −60° to +60°). Furthermore, the metallic strips in the metalens are very thin with a thickness of 50 nm, which can be easily integrated into a chip. The monolithic metalens of broad FOV and ultrathin thickness will have great potential for applications in areas of sensing, imaging, and on-chip information processing.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/5.0020329
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 2583909-3
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  • 3
    Online Resource
    Online Resource
    Magnesium thin film as a doping-free back surface field layer for hybrid solar cells
    AIP Publishing ; 2017
    In:  Applied Physics Letters Vol. 110, No. 13 ( 2017-03-27)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 110, No. 13 ( 2017-03-27)
    Abstract: In this work, a magnesium (Mg) thin film with a low work function is introduced to obtain a downward energy band at the rear surface of a hybrid solar cell to achieve the function of a back surface field (BSF) similar to the conventional n-n+ high-low junction, i.e., favouring the majority carrier transport and suppressing minority carrier recombination. The open circuit voltages (Voc) of the hybrid solar cells with the Mg BSF layer achieve a clear improvement over those containing only the conventional metal electrode (e.g., Ag), resulting in an increase in the power conversion efficiency (PCE) of the hybrid solar cells from 9.2% to 12.3%. The Suns-Voc measurement determined using a Sinton tool gives Voc as a function of light intensity and shows that Voc increases linearly with the light intensity for the solar cell with the Mg BSF but increases first and then stabilises for the cells without the Mg BSF. This result is attributed to a difference in back surface recombination, further confirming the efficacy of an Mg thin film as a BSF. This work indicates that the BSF of hybrid solar cells could be achieved by a doping-free, simple, and room temperature process.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4979345
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    Online Resource
    Online Resource
    On the light-induced enhancement in photovoltaic performance of PEDOT:PSS/Si organic-inorganic hybrid solar cells
    AIP Publishing ; 2017
    In:  Applied Physics Letters Vol. 111, No. 18 ( 2017-10-30)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 111, No. 18 ( 2017-10-30)
    Abstract: Light-induced degradation has been identified to be a critical issue for most silicon-based solar cell technologies. This study presents an observation of an opposite light-induced enhancement (LIE) effect in photovoltaic performance in poly(3,4-ethylthiophene):polystyrenesulfonate/n-Si organic-inorganic hybrid solar cells. The reduced density of interface states under light soaking (LS) is found to be responsible for the LIE of the hybrid solar cells. An increased minor carrier lifetime under LS and a switchable photoluminescence intensity while applying a voltage bias are observed, providing evidence for the underlying physical mechanism.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.5003993
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    Online Resource
    Online Resource
    Achievement of two logical states through a polymer/silicon interface for organic-inorganic hybrid memory
    AIP Publishing ; 2017
    In:  Applied Physics Letters Vol. 111, No. 19 ( 2017-11-06)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 111, No. 19 ( 2017-11-06)
    Abstract: A hysteresis loop of minority carrier lifetime vs voltage is found in polystyrenesulfonate (PSS)/Si organic-inorganic hybrid heterojunctions, implying an interfacial memory effect. Capacitance-voltage and conductance-voltage hysteresis loops are observed and reveal a memory window. A switchable interface state, which can be controlled by charge transfer based on an electrochemical oxidation/deoxidation process, is suggested to be responsible for this hysteresis effect. We perform first-principle total-energy calculations on the influence of external electric fields and electrons or holes, which are injected into interface states on the adsorption energy of PSS on Si. It is demonstrated that the dependence of the interface adsorption energy difference on the electric field is the origin of this two-state switching. These results offer a concept of organic-inorganic hybrid interface memory being optically or electrically readable, low-cost, and compatible with the flexible organic electronics.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4998000
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 6
    Online Resource
    Online Resource
    Highly efficient power extraction in terahertz quantum cascade laser via a grating coupler
    AIP Publishing ; 2018
    In:  Applied Physics Letters Vol. 113, No. 12 ( 2018-09-17)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 113, No. 12 ( 2018-09-17)
    Abstract: We demonstrate the highly efficient power extraction from terahertz quantum cascade laser (THz-QCL) via a grating coupler (GC). The GC, formed in the top metallization of a Fabry-Perot (FP) THz-QCL with a metal-metal (MM) waveguide, diffracts the THz wave into the free space when it oscillates between the two cleaved facets. The radiation loss can be tailored in a wide range by changing the structure of the GC. The asymmetric positioning of the GC enables near-unidirectional emission, the enlarged emission surface reduces the beam divergence, and the MM waveguide keeps the optical confinement factor near unity. Experimental results confirm that, when the operating frequency is near 2.7 THz, the laser with a GC shows superior performances than the conventional FP lasers in terms of output power and operation temperature.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.5041977
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 211245-0
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  • 7
    Online Resource
    Online Resource
    Unextendible product basis for fermionic systems
    AIP Publishing ; 2014
    In:  Journal of Mathematical Physics Vol. 55, No. 8 ( 2014-08-01)
    Details
    In: Journal of Mathematical Physics, AIP Publishing, Vol. 55, No. 8 ( 2014-08-01)
    Abstract: We discuss the concept of unextendible product basis (UPB) and generalized UPB for fermionic systems, using Slater determinants as an analogue of product states, in the anti-symmetric subspace \documentclass[12pt]{minimal}\begin{document}$\wedge ^ N {\mathbb {C}}^M$\end{document}∧NCM. We construct an explicit example of generalized fermionic unextendible product basis (FUPB) with minimum cardinality N(M − N) + 1 for any N ⩾ 2, M ⩾ 4. We also show that any bipartite anti-symmetric space \documentclass[12pt] {minimal}\begin{document}$\wedge ^ 2 {\mathbb {C}}^M$\end{document}∧2CM of codimension two is spanned by Slater determinants, and the spaces of higher codimension may not be spanned by Slater determinants. Furthermore, we construct an example of complex FUPB of N = 2, M = 4 with minimum cardinality 5. In contrast, we show that a real FUPB does not exist for N = 2, M = 4. Finally, we provide a systematic construction for FUPBs of higher dimensions by using FUPBs and UPBs of lower dimensions.
    Type of Medium: Online Resource
    ISSN: 0022-2488 , 1089-7658
    URL: Article
    DOI: 10.1063/1.4893358
    RVK:
    UA 4660
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 1472481-9
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  • 8
    Online Resource
    Online Resource
    Terahertz master-oscillator power-amplifier quantum cascade lasers
    AIP Publishing ; 2016
    In:  Applied Physics Letters Vol. 109, No. 23 ( 2016-12-05)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 109, No. 23 ( 2016-12-05)
    Abstract: We report on the realization of a monolithically integrated master-oscillator power-amplifier architecture in a terahertz quantum cascade laser (THz-QCL) with a metal-metal waveguide. The master-oscillator section is a first-order distributed feedback (DFB) laser. Instead of using a thick anti-reflection coating, we exploit a diffraction grating together with an absorbing boundary in the power-amplifier section to efficiently extract the laser radiation and suppress the self-lasing in it. The devices demonstrate a stable generation and power amplification of single-mode emission. The amplification factor is about 5, and the output power is approximately twice that of the standard second-order DFB lasers fabricated from the same material. Emission beam pattern with a divergence angle of ∼18 × 40° is achieved. Our work provides an avenue for the realization of single-mode THz-QCLs with high output power and good beam quality.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4969067
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 211245-0
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  • 9
    Online Resource
    Online Resource
    Evaluating interface roughness and micro-fluctuation potential of InAs/GaSb superlattices by mid-infrared magnetophotoluminescence
    AIP Publishing ; 2020
    In:  Applied Physics Letters Vol. 117, No. 8 ( 2020-08-24)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 117, No. 8 ( 2020-08-24)
    Abstract: Interface roughness of the InAs/GaSb type-II superlattice (T2SL) is a key issue for infrared photodetector performance. While numerous studies have been performed on interface roughness from the atomic perspective, the relation with photoelectric performance is not yet straightforward. In this study, we carry out mid-infrared magnetophotoluminescence (MPL) measurements on InAs/GaSb T2SLs with a nominally identical period structure. Micro-fluctuation potential and effective interface roughness are evaluated and compared by the photoluminescence linewidth evolution. The analyses agree qualitatively with the x-ray diffraction linewidth and resolve two types of interface roughness quantitatively: the long lateral-length fluctuation, which is exacerbated by the lattice-mismatch, and the short lateral-length fluctuation, which is related possibly to interfacial atomic exchange. These results suggest that MPL can be an effective tool for evaluating the micro-fluctuation potential of InAs/GaSb T2SLs and understanding the effects of interface roughness on electro-optical performance.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0015540
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 211245-0
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  • 10
    Online Resource
    Online Resource
    Silicon surface passivation by polystyrenesulfonate thin films
    AIP Publishing ; 2017
    In:  Applied Physics Letters Vol. 110, No. 8 ( 2017-02-20)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 110, No. 8 ( 2017-02-20)
    Abstract: The use of polystyrenesulfonate (PSS) thin films in a high-quality passivation scheme involving the suppression of minority carrier recombination at the silicon surface is presented. PSS has been used as a dispersant for aqueous poly-3,4-ethylenedioxythiophene. In this work, PSS is coated as a form of thin film on a Si surface. A millisecond level minority carrier lifetime on a high resistivity Si wafer is obtained. The film thickness, oxygen content, and relative humidity are found to be important factors affecting the passivation quality. While applied to low resistivity silicon wafers, which are widely used for photovoltaic cell fabrication, this scheme yields relatively shorter lifetime, for example, 2.40 ms on n-type and 2.05 ms on p-type wafers with a resistivity of 1–5 Ω·cm. However, these lifetimes are still high enough to obtain high implied open circuit voltages (Voc) of 708 mV and 697 mV for n-type and p-type wafers, respectively. The formation of oxides at the PSS/Si interface is suggested to be responsible for the passivation mechanism.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4976949
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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