In:
Journal of Applied Physics, AIP Publishing, Vol. 101, No. 9 ( 2007-05-01)
Abstract:
The use of combined filtered cathodic vacuum arc (FCVA) technique and laser ablation to fabricate high-quality As doped ZnO (ZnO:As) films at room temperature is proposed. This is possible because FCVA technique is capable of realizing high-quality undoped ZnO films with extremely high resistivity (i.e., extremely low concentration of Zn interstitials) at low deposition temperature. In addition, laser ablation allows the generation of As plume to react with Zn ion species and O2 inside the FCVA chamber to form ZnO:As films. It was shown that high-quality p-type ZnO:As film with a resistivity of 0.05Ωcm, a mobility of 2cm2∕Vs, and a hole concentration of 4×1019cm−3 was obtained at room temperature by using the proposed deposited technique. X-ray photoemission spectroscopy analysis has indicated that complex of As substitutional Zn induces two Zn vacancies (i.e., AsZn–2VZn complex), which is likely to be the defect contributing to the formation of shallow acceptor lever inside the ZnO:As films. Furthermore, In∕Au Ohmic contacts deposited on p-type ZnO:As films and p-n ZnO based homojunction have been fabricated using plastic as the substrate.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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