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  • 1
    Online Resource
    Online Resource
    Surface modification of highly ordered TiO2 nanotube arrays for efficient photoelectrocatalytic water splitting
    AIP Publishing ; 2009
    In:  Applied Physics Letters Vol. 94, No. 11 ( 2009-03-16)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 94, No. 11 ( 2009-03-16)
    Abstract: An efficient visible-light-sensitive heterostructure photoanode of CdS nanoparticles/ZnO shell/TiO2 nanotube (CdS/ZnO–TiNT) arrays were investigated for solar water splitting. Highly ordered arrays of TiNT were grown vertically on Ti foil by electrochemical anodization. Both aqueous solution routes were used in turn to coat a thin recombination barrier of ZnO shell and narrow band gap CdS nanoparticles to the surface of the TiNT arrays. As a result of strong absorption within solar spectrum and effective suppression of electron-hole pair recombination in CdS/ZnO–TiNT arrays, a significant improvement in solar-to-hydrogen conversion efficiency from 0.39% to 1.30% was obtained.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.3099338
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2009
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    Experimental analysis of surface plasmon behavior in metallic circular slits
    AIP Publishing ; 2007
    In:  Applied Physics Letters Vol. 90, No. 6 ( 2007-02-05)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 90, No. 6 ( 2007-02-05)
    Abstract: Using a focused ion beam, the authors fabricated metallic circular slits onto a glass substrate coated with silver film. The influence of the number of slits and the focusing light phenomena was investigated by capturing the light transmitted through the circular slits. They demonstrate experimentally that the circular grating formed by a set of periodical slits can excite both stronger surface plasmon (SP) and localized surface plasmon as the number of slits increases. They found that the SP tended to congregate at the center of the circular grating, and that the reemitted light could be used to achieve a focusing phenomenon.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2471966
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2007
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    Electron-assisted PR etching in oxygen inductively coupled plasma via a low-energy electron beam
    AIP Publishing ; 2023
    In:  Physics of Plasmas Vol. 30, No. 2 ( 2023-02-01)
    Details
    In: Physics of Plasmas, AIP Publishing, Vol. 30, No. 2 ( 2023-02-01)
    Abstract: In this study, electron-assisted photoresist (PR) etching is conducted using oxygen inductively coupled plasma at a pressure of 3 mTorr. During the PR etching, a low-energy electron beam is generated and is controlled by varying the acceleration voltage (0–40 V) on the grid to assist with the PR etching. When a low acceleration voltage ( & lt;20 V) is applied, no electron beam is generated, and PR etching is assisted by the accelerated ions. However, the acceleration voltage is increased (about 20–25 V), an electron beam is generated, and PR etching is assisted by the electron beam. At high acceleration voltages ( & gt;25 V), the etch rate increases, and the ion bombardment energy decreases with increasing electron beam energy. The electron energy probability function is measured to verify the relation between the etch rate and acceleration voltage with respect to the sheath thickness on the grid. Furthermore, low contribution of the O radical to the etch rate increment is observed via optical emission spectroscopy measurements.
    Type of Medium: Online Resource
    ISSN: 1070-664X , 1089-7674
    URL: Article
    DOI: 10.1063/5.0131389
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 1179425-2
    detail.hit.zdb_id: 1472746-8
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  • 4
    Online Resource
    Online Resource
    Evolution of the electron energy distribution and E-H mode transition in inductively coupled nitrogen plasma
    AIP Publishing ; 2010
    In:  Physics of Plasmas Vol. 17, No. 3 ( 2010-03), p. 033506-
    Details
    In: Physics of Plasmas, AIP Publishing, Vol. 17, No. 3 ( 2010-03), p. 033506-
    Type of Medium: Online Resource
    ISSN: 1070-664X , 1089-7674
    URL: Article
    DOI: 10.1063/1.3361199
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2010
    detail.hit.zdb_id: 1179425-2
    detail.hit.zdb_id: 1472746-8
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  • 5
    Online Resource
    Online Resource
    Universality and scaling in complex networks from periods of Chinese history
    AIP Publishing ; 2023
    In:  Chaos: An Interdisciplinary Journal of Nonlinear Science Vol. 33, No. 1 ( 2023-01-01)
    Details
    In: Chaos: An Interdisciplinary Journal of Nonlinear Science, AIP Publishing, Vol. 33, No. 1 ( 2023-01-01)
    Abstract: Critical physical systems with large numbers of molecules can show universal and scaling behaviors. It is of interest to know whether human societies with large numbers of people can show the same behaviors. Here, we use network theory to analyze Chinese history in periods 209 BCE–23 CE and 515–618 CE) related to the Western Han–Xin Dynasty and the late Northern Wei–Sui Dynasty, respectively. Two persons are connected when they appear in the same historical event. We find that the historical networks from two periods separated about 500 years have interesting universal and scaling behaviors, and they are small-world networks; their average cluster coefficients as a function of degree are similar to the network of movie stars. In the historical networks, the persons with larger degrees prefer to connect with persons with a small degree; however, in the network of movie stars, the persons with larger degrees prefer to connect with persons with large degrees. We also find an interesting similar mechanism for the decline or collapse of historical Chinese dynasties. The collapses of the Xin dynasty (9–23 CE) and the Sui dynasty (581–618 CE) were initiated from their arrogant attitude toward neighboring states.
    Type of Medium: Online Resource
    ISSN: 1054-1500 , 1089-7682
    URL: Article
    DOI: 10.1063/5.0134923
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 1150918-1
    detail.hit.zdb_id: 1472677-4
    SSG: 11
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  • 6
    Online Resource
    Online Resource
    Focusing properties of microspheres containing multiconcentric metallic rings
    AIP Publishing ; 2009
    In:  Applied Physics Letters Vol. 95, No. 5 ( 2009-08-03)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 95, No. 5 ( 2009-08-03)
    Abstract: We fabricated multiconcentric metallic rings on a polystyrene microbead by using a focused ion beam. We found this type of structure possesses good focusing properties unlike planar multiconcentric metallic rings, which require varying the width of each ring. In addition, we found that we can change the shape of the bead by heating it, after which we then fabricated multiconcentric metallic rings around it. Our results showed that the focal distance of the structure as well as the size of the focal spot increased as the heating time increased. These kinds of structures have good potential for application to optical imaging and photolithography.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.3200243
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2009
    detail.hit.zdb_id: 211245-0
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  • 7
    Online Resource
    Online Resource
    Study of GaN light-emitting diodes fabricated by laser lift-off technique
    AIP Publishing ; 2004
    In:  Journal of Applied Physics Vol. 95, No. 8 ( 2004-04-15), p. 3916-3922
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 95, No. 8 ( 2004-04-15), p. 3916-3922
    Abstract: The fabrication process and performance characteristics of the laser lift-off (LLO) GaN light-emitting diodes (LEDs) were investigated. The LLO-GaN LEDs were fabricated by lifting off the GaN LED wafer structure grown on the original sapphire substrate by a KrF excimer laser at 248 nm wavelength with the laser fluence of 0.6 J/cm2 and transferring it onto a Cu substrate. The LLO-GaN LEDs on Cu show a nearly four-fold increase in the light output power over the regular LLO-LEDs on the sapphire substrate. High operation current up to 400 mA for the LLO-LEDs on Cu was also demonstrated. Based on the emission wavelength shift with the operating current data, the LLO-LEDs on Cu show an estimated improvement of heat dissipation capacities by nearly four times over the light-emitting devices on sapphire substrate. The LLO process should be applicable to other GaN-based LEDs in particular for those high light output power and high operation current devices.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.1651338
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2004
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 8
    Online Resource
    Online Resource
    Stability improvement of organic light emitting diodes by the insertion of hole injection materials on the indium tin oxide substrate
    AIP Publishing ; 2014
    In:  Journal of Applied Physics Vol. 115, No. 12 ( 2014-03-28)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 115, No. 12 ( 2014-03-28)
    Abstract: The degradation of organic light-emitting diodes (OLEDs) is a very complex issue, which might include interfacial charge accumulation, material diffusion, and electrical-induced chemical reaction during the operation. In this study, the origins of improvement in device stability from inserting a hole injection layer (HIL) at the indium tin oxide (ITO) anode are investigated. The results from aging single-layer devices show that leakage current increases in the case of ITO/hole transport layer contact, but this phenomenon can be prevented by inserting molybdenum oxide (MoO3) or 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN6) as an HIL. Moreover, X-ray photoemission spectroscopy suggests that the diffusion of indium atoms and active oxygen species can be impeded by introducing MoO3 or HAT-CN6 as an HIL. These results reveal that the degradation of OLEDs is related to indium and oxygen out-diffusion from the ITO substrates, and that the stability of OLEDs can be improved by impeding this diffusion with HILs.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4869183
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 3112-4
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  • 9
    Online Resource
    Online Resource
    Microstructural investigation of oxidized Ni/Au ohmic contact to p -type GaN
    AIP Publishing ; 1999
    In:  Journal of Applied Physics Vol. 86, No. 7 ( 1999-10-01), p. 3826-3832
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 86, No. 7 ( 1999-10-01), p. 3826-3832
    Abstract: The microstructure of oxidized Ni/Au films on p-GaN was examined to elucidate the formation of a low resistance ohmic contact to p-GaN with a field-emission gun transmission electron microscope in conjunction with composition analyses. The p-GaN/Ni/Au samples were heat treated at 500 °C in air mainly composed of a mixture of crystalline NiO, Au, and amorphous Ni–Ga–O phases. Small voids adjacent to the p-GaN film were also observed. The as-deposited Au film converted into discontinuous islands containing small amounts of Ni that connect with p-GaN. NiO formed a continuous film at the surface that covers the Au islands and the amorphous Ni–Ga–O phases. Moreover, NiO partially contacts p-GaN as well as Au islands and the amorphous Ni–Ga–O phase. The orientation relationship of the crystalline NiO, Au-rich islands, and p-GaN film was identified as NiO(111)//Au(111̄)//GaN(0002) and NiO[11̄0]//Au[11̄0] //GaN[112̄0]. The results suggested that Ni atoms diffuse through the Au layer onto the surface and react with oxygen to form NiO, whereas Au atoms diffuse towards the inside to form a Au–Ni alloy. The microstructural examination indicated that the crystalline NiO and/or the amorphous Ni–Ga–O phases may significantly affect the low resistance ohmic contact to p-GaN.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.371294
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 10
    Online Resource
    Online Resource
    Characterization of pulsed plasma in unbalanced magnetron argon discharge
    AIP Publishing ; 2005
    In:  Physics of Plasmas Vol. 12, No. 6 ( 2005-06-01)
    Details
    In: Physics of Plasmas, AIP Publishing, Vol. 12, No. 6 ( 2005-06-01)
    Abstract: Time-resolved probe measurements have been conducted in a unipolar pulsed dc magnetron system to investigate the temporal evolution of plasma parameters, such as the electron density and the electron temperature, and to determine how the driving frequency and the duty cycle of the dc pulse affect these parameters. A new probe measurement system was employed to perform the time-resolved measurements of I-V characteristic curves and their second derivatives with a maximum time resolution of 100 ns. The measurements were performed in a constant voltage mode, constant current mode, and constant power mode, with various pulse frequencies ranging from 5 kHz to 50 kHz and duty cycles ranging from 10% to 90%, to investigate the detailed temporal evolutions of the electron energy distribution function and the plasma parameters. The results show that as the pulse frequency increases, the electron density and the electron temperature exhibit insignificant changes. However, the reduction of the duty cycles results in a significant increase of the electron temperature, irrespective of the operating mode. A comparison of the measured electron energy distribution functions shows that the increase in the electron temperature is caused by a decrease in the population of trapped low-energy electrons and∕or by an increase in the population of drifting high-energy electrons. This result can be explained by considering the electron heating due to the deep-penetrating cathode sheath.
    Type of Medium: Online Resource
    ISSN: 1070-664X , 1089-7674
    URL: Article
    DOI: 10.1063/1.1924709
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2005
    detail.hit.zdb_id: 1179425-2
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