In:
Applied Physics Letters, AIP Publishing, Vol. 86, No. 21 ( 2005-05-23)
Abstract:
Photovoltaic p-n junctions are the most significant active components of both current infrared photodetectors and advanced ones being developed. It is of the utmost importance to control both p- and n-type extrinsic doping. This letter addresses the issue of activating arsenic as a p-type dopant of Hg1−xCdxTe at temperatures sufficiently low that the integrity of p-n junctions and the intrinsic advantages of molecular beam epitaxy as a growth technique will not be compromised. The p-type activation of arsenic in (211)B Hg1−xCdxTe is reported after a two-stage anneal at temperatures below 300 °C for Cd compositions suitable for the sensing of long wavelength infrared radiation.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2005
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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