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  • 1
    Online Resource
    Online Resource
    Annealing behavior of MeV implanted carbon in silicon
    AIP Publishing ; 1993
    In:  Journal of Applied Physics Vol. 74, No. 6 ( 1993-09-15), p. 3815-3820
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 74, No. 6 ( 1993-09-15), p. 3815-3820
    Abstract: The annealing behavior of carbon implanted at 1.3 MeV with a dose of 5×1019 ions/m2 into Czochralski-grown silicon wafers is investigated using an x-ray double-crystal method, transmission electron microscopy, secondary-ion-mass spectroscopy, and infrared-absorption spectroscopy. For comparison, the behavior of boron implanted at 2.0 MeV with 5×1019 ions/m2 is also investigated. X-ray rocking curve analysis shows that carbon produces a larger lattice strain than boron. For the samples annealed at 1273 K, x-ray data indicate that the carbon atoms, unlike the boron atoms, do not occupy substitutional sites. In addition, the present experimental data suggest that the interaction of interstitial carbon atoms with silicon self-interstitials produced by ion implantation suppresses the generation of dislocations and brings about the reduction of lattice strain in the implanted region.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.354474
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1993
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 2
    Online Resource
    Online Resource
    Nitrogen doping and thermal stability in HfSiOxNy studied by photoemission and x-ray absorption spectroscopy
    AIP Publishing ; 2005
    In:  Applied Physics Letters Vol. 87, No. 18 ( 2005-10-31)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 87, No. 18 ( 2005-10-31)
    Abstract: We have investigated nitrogen-doping effects into HfSiOx films on Si and their thermal stability using synchrotron-radiation photoemission and x-ray absorption spectroscopy. N1s core-level photoemission and NK-edge absorption spectra have revealed that chemical-bonding states of N–Si3−xOx and interstitial N2-gaslike features are clearly observed in as-grown HfSiOxNy film and they decrease upon ultrahigh vacuum (UHV) annealing due to a thermal instability, which can be related to the device performance. Annealing-temperature dependence in Hf4f and Si2p photoemission spectra suggests that the Hf-silicidation temperature is effectively increased by nitrogen doping into the HfSiOx although the interfacial SiO2 layer is selectively reduced. No change in valence-band spectra upon UHV annealing suggests that crystallization of the HfSiOxNy films is also hindered by nitrogen doping into the HfSiOx.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2126112
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2005
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
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    Online Resource
    Effect of S and O on the growth of chemical-vapor deposition diamond (100) surfaces
    AIP Publishing ; 2001
    In:  The Journal of Chemical Physics Vol. 115, No. 11 ( 2001-09-15), p. 5284-5291
    Details
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 115, No. 11 ( 2001-09-15), p. 5284-5291
    Abstract: Sulfur and oxygen are known to improve the crystal quality of the chemical vapor deposition (CVD) diamond. In the CVD process, the sulfur is incorporated into the diamond crystal, while the oxygen is not incorporated. In the present study, first-principle calculations have been performed to investigate the effect of sulfur and oxygen on the growth mechanisms of CVD diamond (100) surfaces. The S and O atoms in the vapor are spontaneously inserted into the dimer bond on the diamond (100). The S and O insertions induce a compressive stress along the dimer bond and enhance the CH2 bridging across the trough. In the case of oxygen, the on-top C=O structure is spontaneously formed and it is considered to be desorbed from the surface during the CVD process. The S atom is considered to be incorporated into the diamond (100) lattice via the formation of 3-and 4-coordinated S on the surface.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    URL: Article
    DOI: 10.1063/1.1396816
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 4
    Online Resource
    Online Resource
    Deep-level transient spectroscopy on p -type silicon crystals containing tungsten impurities
    AIP Publishing ; 1991
    In:  Journal of Applied Physics Vol. 70, No. 10 ( 1991-11-15), p. 5401-5403
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 70, No. 10 ( 1991-11-15), p. 5401-5403
    Abstract: Tungsten deep levels are investigated to clarify energies, which are inconsistent among current research. Hole traps located at 0.41 eV above the top of the valence band are determined to be due to tungsten impurities. The concentration of hole traps is almost one-third of that of the tungsten impurities in the substrates. Similar hole traps are also found in different silicon substrates in which tungsten impurities are thermally diffused from the surface. These facts indicate that the hole traps are truly due to tungsten impurities.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.350196
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1991
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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