In:
Journal of Applied Physics, AIP Publishing, Vol. 103, No. 9 ( 2008-05-01)
Abstract:
Ambipolar conduction of a pentacene-based field-effect transistor can be attributed to dual interface engineering, which occurs at the dielectric∕semiconductor interface and electrode∕semiconductor interface. While the former was realized by utilizing a hydroxyl-free gate dielectric, the latter was made feasible by the use of appropriate metal source and drain electrodes. The field-effect hole and electron mobilities of 0.026 and 0.0023cm2∕Vs, respectively, were extracted from the transfer characteristics of pentacene organic field-effect transistors utilizing polymethyl methacrylate as the trap-reduction interfacial modified layer and Al as the source and drain (S∕D) electrodes. We demonstrated a complementarylike inverter by using two identical ambipolar transistors and it can be operated both in the first and third quadrants with a high output voltage gain of around 10.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2008
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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