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  • 11
    Online Resource
    Online Resource
    High etch rates of GaN with magnetron reactive ion etching in BCl3 plasmas
    AIP Publishing ; 1995
    In:  Applied Physics Letters Vol. 66, No. 24 ( 1995-06-12), p. 3328-3330
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 66, No. 24 ( 1995-06-12), p. 3328-3330
    Abstract: Magnetron reactive ion etching of GaN in BCl3 plasmas was investigated as a function of cathode power density, flow rate, and pressure. GaN etch rates were achieved (350 nm/min), which were twice the highest etch rate previously reported, and at low cathode bias voltages ( & lt;100 V). Auger electron spectroscopy measurements revealed the etched surfaces to be Ga deficient to a depth of 10 nm, with a surface chlorine residue of & lt;1 at. %. Magnetron dry etching appears well suited to applications such as mesa definitions for photonic devices in the GaN materials system.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.113746
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 12
    Online Resource
    Online Resource
    Electro-optic correlator for large-format microwave interferometry: Up-conversion and correlation stages performance analysis
    AIP Publishing ; 2017
    In:  Review of Scientific Instruments Vol. 88, No. 4 ( 2017-04-01)
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 88, No. 4 ( 2017-04-01)
    Abstract: In this paper, a microwave interferometer prototype with a near-infra-red optical correlator is proposed as a solution to get a large-format interferometer with hundreds of receivers for radio astronomy applications. A 10 Gbits/s Lithium Niobate modulator has been tested as part of an electro-optic correlator up-conversion stage that will be integrated in the interferometer prototype. Its internal circuitry consists of a single-drive modulator biased by a SubMiniature version A (SMA) connector allowing to up-convert microwave signals with bandwidths up to 12.5 GHz to the near infrared band. In order to characterize it, a 12 GHz tone and a bias voltage were applied to the SMA input using a polarization tee. Two different experimental techniques to stabilize the modulator operation point in its minimum optical carrier output power are described. The best achieved results showed a rather stable spectrum in amplitude and wavelength at the output of the modulator with an optical carrier level 23 dB lower than the signal of interest. On the other hand, preliminary measurements were made to analyze the correlation stage, using 4f and 6f optical configurations to characterize both the antenna/fiber array configuration and the corresponding point spread function.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/1.4979811
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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  • 13
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    Online Resource
    Growth of single crystal Ge films on GaAs and InGaP and highly oriented Au films on Ge
    AIP Publishing ; 1994
    In:  Applied Physics Letters Vol. 64, No. 20 ( 1994-05-16), p. 2697-2699
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 64, No. 20 ( 1994-05-16), p. 2697-2699
    Abstract: Single crystal germanium films were deposited on (100) GaAs and InGaP substrates, and highly oriented gold films were deposited on the germanium films by ultrahigh vacuum E-beam evaporation. They were characterized by double crystal x-ray diffraction (DXRD), transmission electron microscopy (TEM), Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). The germanium film grew epitaxially with a smooth, abrupt interface, and the highly oriented gold film formed a smooth interface with the germanium and had a (100)Au∥(100)Ge and (001)Au∥[011]Ge or [001] Au∥[0-1 1]Ge orientation relationship. Large grains with one or the other orientation relationship could be distinguished in the SEM. TEM micrographs show that the grains have a periodic dislocation pattern indicative of heteroepitaxy, and the grain boundaries appear to have a low energy. No contamination was detected in the gold film away from the interface with the germanium, and there was significant channeling of the RBS beam when it was normal to the gold film.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.111495
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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