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  • AIP Publishing  (655)
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  • 1
    Online-Ressource
    Online-Ressource
    Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact
    AIP Publishing ; 2022
    In:  Journal of Applied Physics Vol. 132, No. 16 ( 2022-10-28)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 132, No. 16 ( 2022-10-28)
    Kurzfassung: In this paper, the ohmic contact mechanism and gate electrostatic control of a deep-recessed ohmic contact structure for multi-channel Al0.3Ga0.7N/GaN high electron mobility transistors (HEMTs) is investigated. A transmission electron microscope and an energy dispersive spectrum are utilized to investigate the ohmic contact interface mechanism. Due to a reduction of source/drain parasitic resistances and simultaneous connection of five channels by using deep-recessed ohmic contact, a large maximum drain current density and a distinct five hump feature of ultra-wider trans-conductance are achieved. More importantly, it is revealed that the downward expansion of the gate potential for the deep-recessed ohmic contact structure is much deeper than that for conventional devices. This characteristic leads to a remarkable reduction in subthreshold swing (SS) and off-state leakage, indicating an ultra-wide and high trans-conductance profile. The fabricated devices show a lower off-state drain leakage, a lower SS, and a wider gate voltage swing (40 V). Due to an enhancement of gate electrostatic control, the current collapse and electrical reliability characteristics of multi-channel Al0.3Ga0.7N/GaN HEMTs with deep-recessed ohmic contact also improve. The results presented here indicate that the multi-channel device has great potential for high current and wide bandwidth applications.
    Materialart: Online-Ressource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/5.0106827
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2022
    ZDB Id: 220641-9
    ZDB Id: 3112-4
    ZDB Id: 1476463-5
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    Online-Ressource
  • 2
    Online-Ressource
    Online-Ressource
    The electrical- and magneto-transport properties of Rb-, Sn-, and Co-doped BiCuSeO crystals
    AIP Publishing ; 2021
    In:  AIP Advances Vol. 11, No. 10 ( 2021-10-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 11, No. 10 ( 2021-10-01)
    Kurzfassung: Doped BiCuSeO is one of the promising thermoelectric oxide candidates. However, the research on doping effects on the electrical transport properties of BiCuSeO, especially in crystalline samples, is still limited. Here, we studied the transport properties of doped BiCuSeO crystals, including three types of doping species (Rb, Sn, and Co) with varying concentrations. In the case of Rb-doped BiCuSeO crystals, few percentage (≤1%) Rb-doping make BiCuSeO display metallic behavior, while high one (≥2%) displays bad-metallic behavior. Both Sn- and Co-doped BiCuSeO crystals have similar electrical evolution as Rb-doped ones. The charge carriers of all these doped BiCuSeO crystals are holes, and the increased dopant concentration decreases the hole concentrations regardless of the type of dopant species. There is negative magnetoresistance (MR) in Rb- and Sn-doped BiCuSeO at low temperature ( & lt;15 K), which is due to the breakdown of weak localization by magnetic field B, but the MR behaviors in Co-doped BiCuSeO crystals are strongly correlated with their magnetic properties. The analysis of the temperature-dependent mobility of these doped BiCuSeO crystals substantiates that at low temperatures ( & lt;50 K), electron-impurity scattering dominates, while electron–phonon scattering dominates at high temperatures ( & gt;50 K). The evolution of the above-mentioned electrical/magneto-transport properties of doped BiCuSeO can be understood as follows: the dopant compensates the Bi-deficiency in pristine BiCuSeO crystals and decreases the hole concentration and leads to the metal–Anderson-insulator transition. These results may be valuable to optimize the electrical properties of layered compounds similar to BiCuSeO.
    Materialart: Online-Ressource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/5.0059322
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2021
    ZDB Id: 2583909-3
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    Online-Ressource
  • 3
    Online-Ressource
    Online-Ressource
    Improved pulse discrimination for a superconducting series nanowire detector by applying a digital matched filter
    AIP Publishing ; 2021
    In:  Applied Physics Letters Vol. 119, No. 23 ( 2021-12-06)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 119, No. 23 ( 2021-12-06)
    Kurzfassung: Photon number resolving (PNR) is an important capacity for detectors working in quantum and classical applications. Although a conventional superconducting nanowire single-photon detector (SNSPD) is not a PNR detector, by arranging nanowires in a series array and multiplexing photons over space, such series PNR-SNSPD can gain quasi-PNR capacity. However, the accuracy and maximum resolved photon number are both limited by the signal-to-noise ratio (SNR) of the output pulses. Here, we introduce a matched filter, which is an optimal filter in terms of SNR. Experimentally, the normalized spacing between pulse amplitudes from adjacent photon number detections increased by a maximum factor of 2.1 after the matched filter. Combining with a cryogenic amplifier to increase SNR further, such spacing increased by a maximum factor of 5.3. In contrast to a low pass filter, the matched filter gave better SNRs while maintaining low timing jitters. The minimum timing jitter of 55 ps was obtained experimentally. Our results suggest that the matched filter is a useful tool for improving the performance of the series PNR-SNSPD. The maximum resolved photon number can be expected to reach 65 or even larger.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0068449
    RVK:
    UA 1000
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2021
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
    Standort Signatur Einschränkungen Verfügbarkeit
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    Online-Ressource
  • 4
    Online-Ressource
    Online-Ressource
    Investigation on laser plasma instability of the outer ring beams on SGIII laser facility
    AIP Publishing ; 2019
    In:  AIP Advances Vol. 9, No. 9 ( 2019-09-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 9, No. 9 ( 2019-09-01)
    Kurzfassung: In order to study the laser plasma instabilities (LPIs) in the context of some novel six-side laser-driven indirect designs like the six-cylinder-port hohlraum and the three-axis cylindrical hohlraum, where the laser beams inject in hohlraum with a large angle. LPI experiments in cylindrical hohlraum with only outer beams were designed and performed based on the current laser arrangement condition of SGIII laser facility for the first time. Stimulated Brillouin backscatter (SBS) was found to be the dominant instability with high instantaneous reflectivity in experiments. A typical feature was obtained in the time-resolved spectra of SBS, which maintained similar for different laser intensities of the interaction beam. The experimental data are analyzed by the hydrodynamic simulations combined with HLIP code, which is based on the ray-tracing model. By analysis of experimental data, it is argued that the mixture of gas and Au in the region of their interface is important to SBS, which indicates the need for the mixture model between the filled gas and the high Z plasma from hohlraum wall in the hydrodynamic simulations. Nonlinear saturation of SBS as well as the smoothed beam are also discussed here. Our effective considerations of the ions pervasion effect and the smoothed beam provide utilitarian ways for improvement of the current ray-tracing method.
    Materialart: Online-Ressource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.5087936
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2019
    ZDB Id: 2583909-3
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  • 5
    Online-Ressource
    Online-Ressource
    On-Line Photoionization Mass Spectrometric Study on Behavior of Ammonia Poisoning on H-Form Ultra Stable Y Zeolite for Catalytic Pyrolysis of Polypropylene
    AIP Publishing ; 2016
    In:  Chinese Journal of Chemical Physics Vol. 29, No. 6 ( 2016-12-27), p. 681-686
    Details
    In: Chinese Journal of Chemical Physics, AIP Publishing, Vol. 29, No. 6 ( 2016-12-27), p. 681-686
    Kurzfassung: In this work, pyrolysis photoionization time-of-flight mass spectrometry (Py-PI-TOFMS) was applied to study the behavior of ammonia poisoning on H-form ultra stable Y (HUSY) zeolite for the catalytic pyrolysis of polypropylene (PP). Firstly, ammonia poisoning on HUSY was performed to obtain the suitable catalysts with different strength and amounts of acid sites. Secondly, online photoionization mass spectra for the pyrolysis products of PP and HUSY with various acid strength were recorded at different pyrolysis temperatures. Finally, the formation curves of various pyrolysates of PP/HUSY with the increase of temperature were determined. Our results indicate that the formation temperatures, yields and selectivity of the pyrolysis products of PP demonstrate obvious relationship with the acid strength of HUSY.
    Materialart: Online-Ressource
    ISSN: 1674-0068 , 2327-2244
    URL: Article
    DOI: 10.1063/1674-0068/29/cjcp1604081
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2016
    ZDB Id: 2381472-X
    SSG: 6,25
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    Online-Ressource
  • 6
    Online-Ressource
    Online-Ressource
    Laser repointing scheme for octahedral spherical hohlraum s on the SGIII laser facility
    AIP Publishing ; 2023
    In:  Physics of Plasmas Vol. 30, No. 4 ( 2023-04-01)
    Details
    In: Physics of Plasmas, AIP Publishing, Vol. 30, No. 4 ( 2023-04-01)
    Kurzfassung: The novel octahedral spherical hohlraum can provide an ideal and practical approach for the next generation of laser systems to support both direct and indirect drive to achieve predictable and reproducible fusion gain via multiple schemes. To demonstrate its advantage in a naturally high symmetry at a cylindrically configured laser facility, it requires to repoint the laser beams to approach as close as possible the ideal octahedral beam configuration with an injection angle (the angle between a beam and the normal direction of its laser entrance hole (LEH)) ranging from 50° to 60°. We report our investigation and experiment on the optimum repointing scheme at the SGIII facility, which uses 32 beams, with 8 beams entering each polar LEH at 49.5° and 55°, and 4 beams entering each equatorial LEH at 61.5° and 62.1°. It contains residual imbalance between the polar and equatorial beams, leading to an asymmetry dominated by the spherical harmonic Y20 mode, which can be remarkably reduced by the stronger backscatters of equatorial beams. Our experiment demonstrated the feasibility of the 32-beam optimum repointing scheme and generation of 175 eV under 86 kJ inside a 2.4-mm-radius octahedral hohlraum with 0.7-mm-radius LEHs, which provided a strong support for the later experiment on proof-of-concept of octahedral spherical hohlraum [Lan et al., Phys. Rev. Lett. 127, 245001 (2021)]. 2D simulations on LEH closure agree well with the observations. This work opens a novel way of realization of a quasi-spherical irradiation at a cylindrically configured laser facility without supplementary symmetry control.
    Materialart: Online-Ressource
    ISSN: 1070-664X , 1089-7674
    URL: Article
    DOI: 10.1063/5.0133806
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2023
    ZDB Id: 1472746-8
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  • 7
    Online-Ressource
    Online-Ressource
    Highly nonlinear BiOBr nanoflakes for hybrid integrated photonics
    AIP Publishing ; 2019
    In:  APL Photonics Vol. 4, No. 9 ( 2019-09-09)
    Details
    In: APL Photonics, AIP Publishing, Vol. 4, No. 9 ( 2019-09-09)
    Kurzfassung: We investigate the nonlinear optical properties of BiOBr nanoflakes—a novel two-dimensional (2D) layered material from the bismuth oxyhalide family. We measure the nonlinear absorption and Kerr nonlinearity of BiOBr nanoflakes at both 800 nm and 1550 nm via the Z-Scan technique. We observe a large nonlinear absorption coefficient β ∼ 10−7 m/W as well as a large Kerr coefficient n2 ∼ 10−14 m2/W. We also observe strong dispersion in n2, with it reversing sign from negative to positive as the wavelength varies from 800 nm to 1550 nm. In addition, we characterize the thickness-dependence of the nonlinear optical properties of BiOBr nanoflakes, observing that both the magnitudes of β and n2 increase for very thin flakes. Finally, we integrate BiOBr nanoflakes onto silicon integrated waveguides and characterize the linear optical properties of the resulting hybrid integrated devices, with the measurements agreeing with calculated parameters using independent ellipsometry measurements. These results verify the strong potential of BiOBr as an advanced nonlinear optical material for high-performance hybrid integrated photonic devices.
    Materialart: Online-Ressource
    ISSN: 2378-0967
    URL: Article
    DOI: 10.1063/1.5116621
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2019
    ZDB Id: 2857268-3
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  • 8
    Online-Ressource
    Online-Ressource
    Hole mobility behavior in Al-gradient polarization-induced p-type AlGaN grown on GaN template
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 120, No. 2 ( 2022-01-10)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 120, No. 2 ( 2022-01-10)
    Kurzfassung: A series of samples with their AlGaN layers of decreasing Al contents along the c-axis are grown on GaN templates with molecular beam epitaxy for producing polarization-induced p-type behaviors. By fixing the Al-gradient rate at 0.15%/nm and AlGaN layer thickness at 100 nm while changing the central Al content in those samples, we study the dependence of hole mobility on the central Al content. As the central Al content increases, hole mobility decreases monotonically with two different decreasing slopes in the two Al-content ranges divided at ∼40%. Tensile strain relaxation is observed when the Al content is higher than ∼40%, resulting in the increase in overall polarization gradient and, hence, hole concentration. Although the variation of the alloy scattering strength of hole in AlGaN can support the smaller decreasing slope of hole mobility in the Al-content range of & gt;40%, other factors, such as piezoelectric scattering and bound charge distribution, may need to be considered for a complete interpretation. Compared with Mg-doped p-type AlGaN of 25% in an Al content, the polarization-induced p-type AlGaN can provide us with a higher hole mobility level at about the same hole concentration.
    Materialart: Online-Ressource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0070599
    RVK:
    UA 1000
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2022
    ZDB Id: 211245-0
    ZDB Id: 1469436-0
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  • 9
    Online-Ressource
    Online-Ressource
    MoS2-based ferroelectric field-effect transistor with atomic layer deposited Hf0.5Zr0.5O2 films toward memory applications
    AIP Publishing ; 2020
    In:  AIP Advances Vol. 10, No. 6 ( 2020-06-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 10, No. 6 ( 2020-06-01)
    Kurzfassung: Recently, hafnium oxide (HfO2)-based ferroelectric materials have achieved phenomenal success in next-generation nonvolatile memory applications. In this study, we fabricated Hf0.5Zr0.5O2 (HZO) ferroelectric capacitors and back-gate field-effect transistors (FETs) with few-layered molybdenum disulfide (MoS2) nanosheets as the channel and a ferroelectric Hf0.5Zr0.5O2 film as the gate dielectric. Good dielectric and ferroelectric properties have been observed from the HZO film fabricated with atomic layer deposition-based techniques. The MoS2–HZO ferroelectric FETs (FeFETs) have exhibited excellent performance including ferroelectric polarization switching with a high on/off ratio and negligible degradation in endurance and retention properties. Our results shown here suggest that MoS2–HZO FeFETs can be a promising alternative for next-generation nonvolatile memories.
    Materialart: Online-Ressource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/5.0010829
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2020
    ZDB Id: 2583909-3
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  • 10
    Online-Ressource
    Online-Ressource
    Output performance prediction of PV modules based on power-law model from manufacturer datasheet
    AIP Publishing ; 2022
    In:  Journal of Renewable and Sustainable Energy Vol. 14, No. 3 ( 2022-05-01)
    Details
    In: Journal of Renewable and Sustainable Energy, AIP Publishing, Vol. 14, No. 3 ( 2022-05-01)
    Kurzfassung: The current–voltage (I–V) equation in the equivalent circuit model of the photovoltaic (PV) module is implicit, and the dependence of model parameters on environmental conditions is uncertain, which causes inconvenience in output performance prediction. In this paper, a novel method based on the power-law model (PLM) is proposed to predict the I–V characteristics and output power of PV modules under varying operating conditions. The relationship between parameters in the PLM and manufacturer datasheet information is established. The irradiance and temperature dependences of shape parameters in PLM are obtained and investigated thoroughly. Due to inherent simplicity and explicit expression of PLM, the proposed method predicts the I–V characteristics and output power without using any iterative process, which reduces the computational complexity. The proposed method is validated by different types PV modules and under a wide range of environmental conditions. Comparing with traditional methods based on a single-diode model, the proposed method has better agreements with experimental results in all irradiance and temperature intervals. The accuracy and effectiveness are verified both in short-term and long-term output power prediction. The proposed method is simple and suitable to predict the actual output properties of PV modules under varying operating conditions.
    Materialart: Online-Ressource
    ISSN: 1941-7012
    URL: Article
    DOI: 10.1063/5.0088190
    Sprache: Englisch
    Verlag: AIP Publishing
    Publikationsdatum: 2022
    ZDB Id: 2444311-6
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