In:
Applied Physics Letters, AIP Publishing, Vol. 91, No. 4 ( 2007-07-23)
Abstract:
The authors present room-temperature pseudodielectric function spectra ⟨ε⟩ of InAsxP1−x films grown on (001) InP by chemical beam epitaxy. A wet-chemical etching procedure was used to remove overlayers and obtain the best approximation to the bulk dielectric responses ε of the films. By line shape fitting, we determine the compositional dependences of the E1, E1+Δ1, E0′, E2, and E2′ critical-point energies. The results are in good agreement with calculations of the electronic structure done by the linear augmented Slater-type orbital method.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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