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  • AIP Publishing  (6)
  • Physics  (6)
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  • AIP Publishing  (6)
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  • Physics  (6)
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  • 1
    In: Applied Physics Letters, AIP Publishing, Vol. 106, No. 26 ( 2015-06-29)
    Abstract: We investigated the upper critical fields of Ca10(Pt4As8)(Fe2–xPtxAs2)5 superconducting whiskers. The whiskers consist of several wire-like grains with diameter of around 200 nm, joined by grain boundaries whose misorientation angles are less than 5∘. The upper critical fields along c-axis and in ab-plane were observed as 49 T at 12 K and 50 T at 22 K, respectively, which can be extrapolated to ∼81 and ∼133 T at 0 K. The whisker demonstrated weak anisotropic factor and almost constant value of ∼2 below 15 K. The impressive transport properties of the whisker may find applications in fields like superconducting micro- and meso-structure systems.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 121, No. 12 ( 2022-09-19)
    In: Applied Physics Letters, AIP Publishing, Vol. 121, No. 12 ( 2022-09-19)
    Abstract: The emergence of acoustic logic devices has attracted increasing attention owing to its great potential in logical operations and integrated acoustics. In recent years, various types of acoustic logic gates have successively been demonstrated based on artificial materials. However, simultaneous realization of acoustic logic devices with the characteristics of broad bandwidth and high robustness still poses a great challenge. To overcome this, we numerically design and experimentally demonstrate a multifunctional logic gate based on valley sonic crystals (VSCs). In a designed waveguide composed of two VSCs, a pair of valley edge states can be obtained in the domain wall. Additionally, we experimentally design a multifunctional logic gate composed of four VSCs. The logic functions OR and XOR with the fractional bandwidths of 0.24 and 0.19 can be realized at two output ports, which arises from both valley conservation and linear interference mechanisms. More importantly, we experimentally demonstrate the robustness of the logic gate by introducing a V-shaped defect, and the corresponding logic functions and their bandwidths created by the valley transport of edge states are almost immune to backscattering from the V-shaped defect. Compared with the previous acoustic logic gates, the proposed logic gate has the advantages of multifunctionality, broad bandwidth, and high robustness, which may have practical applications in advanced acoustic devices for computing and information processing.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    In: Applied Physics Letters, AIP Publishing, Vol. 104, No. 1 ( 2014-01-06)
    Abstract: For a better understanding of piezoelectricity in epitaxial film systems, epitaxially grown tetragonal Pb(Zr0.3Ti0.7)0.98Nb0.02O3 (PNZT) thin films with three primary crystallographic orientations were studied with a focus on their piezoelectric behaviors and domain configuration. Using piezoresponse force microscopy, the (001)-oriented epitaxial films were found to show superior piezoelectric properties compared with the (110)- and (111)-oriented films. This can be attributed to the structural characteristics of the tetragonal PNZT phase after applying an electrical field. Island-distributed domain shapes were also mapped for all three orientations.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    Online Resource
    Online Resource
    AIP Publishing ; 2021
    In:  Applied Physics Letters Vol. 119, No. 17 ( 2021-10-25)
    In: Applied Physics Letters, AIP Publishing, Vol. 119, No. 17 ( 2021-10-25)
    Abstract: Acoustic metagratings (AMs) have provided diverse routes for sound modulations based on high-efficiency diffractions created by periodic supercell structures. The emergence of the extension of the generalized Snell's law (GSL), covering both acoustic diffractions and phase modulations, has promoted the design of the AMs with aperiodic phase profiles, which have a great potential in designing high-performance multifunctional devices. However, the realization of reflected aperiodic AMs and its associated multifunctional devices remain a challenge. To overcome this, we here theoretically design and experimentally demonstrate a class of reflected aperiodic AMs and multifunctional acoustic lenses. By using the extension of the GSL, we can overcome the limitations of the GSL (such as the phase gradient and the incident critical angle) and experimentally demonstrate theoretical predictions of sound reflections created by the aperiodic AMs with arbitrary phase gradients under a full-angle incidence. Additionally, we experimentally design a multifunctional reflected lens composed of two selected aperiodic AMs. Interestingly, by simply adjusting the incident angle of sound, we can realize the transformation between the beam splitting and the Bessel-like beam without changing the structure of the lens. Our work paves a way for modulating sound reflections and designing reflected multifunctional devices with promising applications.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    Online Resource
    Online Resource
    AIP Publishing ; 2021
    In:  Applied Physics Letters Vol. 118, No. 14 ( 2021-04-05)
    In: Applied Physics Letters, AIP Publishing, Vol. 118, No. 14 ( 2021-04-05)
    Abstract: Intense 1.53 μm electroluminescence (EL) is achieved from metal-oxide-semiconductor light-emitting devices based on Er-doped Ga2O3 (Ga2O3:Er) nanofilms fabricated by atomic layer deposition. Due to the wide bandgap and outstanding tolerance to electric field and electron injection of the amorphous Ga2O3 matrix, these silicon-based devices present a low turn-on voltage of ∼15 V, while the maximum injection current can reach 5 A/cm2. The optical power density of the EL emissions is improved to 23.73 mW/cm2, with the external quantum efficiency of 36.5% and power efficiency of 0.81%. The prototype devices show good stability and retain ∼90% initial EL intensity after operating consistently for 100 h. The EL originates from the impact excitation of doped Er3+ ions by hot electrons generated within dielectric layers. This work manifests the potential of fabricating practical Si-based light source from Ga2O3:Er nanofilms, enabling various optoelectronic applications.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 6
    Online Resource
    Online Resource
    AIP Publishing ; 2023
    In:  Applied Physics Letters Vol. 123, No. 13 ( 2023-09-25)
    In: Applied Physics Letters, AIP Publishing, Vol. 123, No. 13 ( 2023-09-25)
    Abstract: Floating-gate memory devices based on two-dimensional van der Waals heterostructures are considered as promising candidates for next-generation nonvolatile memories. Here, we report a nonvolatile double-floating-gate (DFG) memory device based on a ReS2/boron nitride/black phosphorus (BP)/boron nitride/graphene heterostructure. By comparing with a single-floating-gate device we fabricated, the device shows enlarged memory window, high on–off ratio, and improved retention performance. Based on these findings, we propose energy band diagrams showing how the memory performance can be improved by energy band engineering through designing the van der Waals heterostructure. In the DFG structure, electrons could transfer between the ReS2 channel and BP as well as between BP and graphene, providing greater controllability for electron tunneling and injection. By choosing graphene and BP as two floating gates, an energy barrier rising from the conduction-band offset between multilayer graphene and BP is set up to efficiently prevent charge leakage from the graphene floating gate and, thus, improve the memory performance. Our work demonstrates an effective way for future designs of high-performance nonvolatile flash memories.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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