In:
Applied Physics Letters, AIP Publishing, Vol. 116, No. 22 ( 2020-06-01)
Abstract:
We have developed an approach to control the carrier density in various materials under high pressure by the combination of an electric double layer transistor (EDLT) and a diamond anvil cell (DAC). In this study, this “EDLT-DAC” was applied to a Bi thin film, and here, we report the field effect under high pressure in the material. Our EDLT-DAC is a promising device for exploring unknown physical phenomena such as high transition-temperature superconductivity.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2020
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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