In:
Applied Physics Letters, AIP Publishing, Vol. 81, No. 27 ( 2002-12-30), p. 5192-5194
Abstract:
Very high levels of n-type doping of AlxGa1−xN alloys were recently achieved by rf plasma-induced molecular-beam epitaxy on sapphire substrates and Si as a dopant. Electron concentrations were obtained up to 1.25×1020 cm−3 when the Al mole fraction was 50%, and 8.5×1019 cm−3 electrons were measured even when the Al mole fraction was 80%. Other material properties were determined by optical absorption, photoluminescence, cathodoluminescence, x-ray diffraction, and atomic force microscopy measurements and high optical and morphological qualities were shown.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2002
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
Permalink