In:
Journal of Applied Physics, AIP Publishing, Vol. 34, No. 3 ( 1963-03-01), p. 669-671
Abstract:
A unique radiation-damage annealing process has been observed at 78°K in tunnel diodes bombarded with high energy electrons. Approximately one half of the radiation-induced excess current in germanium tunnel diodes can be permanently removed by application of forward bias voltages. This ``voltage-annealing'' effect arises from the enhanced migration of charged lattice defects under the influence of the high electric fields present in degenerate semiconductor junctions. A tentative model, based on known deep-lying radiation damage levels, is proposed. Under suitable conditions of forward bias, a charged interstitial can be dissociated from its adjacent paired vacancy, allowing the now isolated interstitial to be swept from the junction region with an estimated activation energy of 0.25 eV.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1963
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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