In:
Journal of Applied Physics, AIP Publishing, Vol. 42, No. 1 ( 1971-01-01), p. 420-424
Abstract:
The thermal decomposition of diborane-phosphine mixtures in a hydrogen atmosphere and the thermal reduction of boron tribromide-phosphorus trichloride mixtures with hydrogen have been used for the deposition of boron phosphide on the basal plane of hexagonal silicon carbide substrates. In the thermal decomposition process, the substrate must be maintained at temperatures below 900°C to minimize the contribution of gas-phase reactions, and the boron phosphide layers showed only preferred orientations. The thermal reduction process was carried out over a wide temperature range, and the boron phosphide layers deposited on the silicon face of silicon carbide substrates at 1050°–1150°C were found, by optical microscopy and reflection electron diffraction examinations, to be single crystalline and epitaxial with respect to the substrate. Epitaxial boron phosphide layers prepared by the halide reduction reaction without intentional doping are p type with a room-temperature carrier concentration of approximately 1019 cm−3. Resistivity measurements in the temperature range 300°–1000°K indicated the presence of two impurity states with activation energies of approximately 0.22 and 0.66 eV, respectively. Needle-shaped boron phosphide crystals have also been obtained by the halide reduction reaction. They are single crystals with the elongated axis along a 〈111〉 direction and are p type with a room-temperature resistivity of approximately 20 Ω cm.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1971
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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