In:
Applied Physics Letters, AIP Publishing, Vol. 33, No. 8 ( 1978-10-15), p. 759-761
Abstract:
Misfit dislocations aligned along the 〈11̄0〉 direction in Ga1−xAlxAs1−yPy-GaAs heterojunctions are shown to be moved by light irradiation. The motion of the misfit dislocation was observed with photoluminescence topographs and x-ray topographs. The velocity of the misfit dislocation is very rapid and proportional to the excitation-light intensity; it is about 2.5 μm/sec per excitation-light intensity of 100 W/cm2 at 25 °C. Its activation energy for the misfit dislocation motion is estimated to be about 0.26 eV. The rapid velocity and the low activation energy suggest that the misfit dislocations in Ga1−xAlxAs1−yPy-GaAs heterojunctions may move in the glide motion of the kink segments in it.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1978
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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