In:
Applied Physics Letters, AIP Publishing, Vol. 31, No. 4 ( 1977-08-15), p. 256-258
Abstract:
Compensation arising from ion damage has been investigated in InP. It is found that ≳10 times the irradiation that produces resistive layers in GaAs is required to similarly compensate InP. The damage anneals in two stages indicating that two distinct defects contribute to the carrier removal process. Partial annealing at ∼400 °C rather than at 500 °C as in GaAs is suggested as a means of producing low-absorption highly resistive layers. From compensation considerations annealing to at least 550 °C will be required for dopant implantations if effective electrical utilization is to be achieved.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1977
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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