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  • 1
    Online Resource
    Online Resource
    ELECTRONIC STRUCTURE OF NiSi2
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1984
    In:  Acta Physica Sinica Vol. 33, No. 10 ( 1984), p. 1480-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 33, No. 10 ( 1984), p. 1480-
    Abstract: The electronic structure of NiSi2 was calculated by using the self-consistent LMTO method. Our result was found to be in resonable agreement with the results of AEUPS photoemission experiment and other calculations. The change in the Ni electron configuration was found to be responsible for the Ni3p3/2 core level binding energy shift; the decrease of Ni3d electrons weakened the screening effect for the Ni3p electrons. The result of calculation showed that the ionicity plays a minor role in chemical bond.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.33.1480
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 1984
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  • 2
    Online Resource
    Online Resource
    TIGHT-BINDING CALCULATION FOR GaAs (110) SURFACE
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1981
    In:  Acta Physica Sinica Vol. 30, No. 10 ( 1981), p. 1400-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 30, No. 10 ( 1981), p. 1400-
    Abstract: In the present work, the tight-binding calculation for the rotational relaxed GaAs (110) surface is studied. In order to simulate the semi-infinite crystal, a saturating slab model is adopted with the last layer of which being saturated by some quasi As and Ga atoms, so that the slab model can be considered as having one surface only. The LDOS thus obtained agrees well with that given by the conventional slab model.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.30.1400
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 1981
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  • 3
    Online Resource
    Online Resource
    ALUMINIUM CHEMISORPTION ON THE SEMICONDUCTOR SURFACES
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1982
    In:  Acta Physica Sinica Vol. 31, No. 2 ( 1982), p. 220-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 31, No. 2 ( 1982), p. 220-
    Abstract: The cluster model and the self-consistent extended Huckel method are used to calculate the stable configuration for the chemisorption of Al on both the Si(lll) and GaAs(110) surfaces. The calculated results show that the threefold ionic chemisorption for Al/Si (111) is more stable than that for the covalent top site, and the LDOS for the threefold site agrees quite well with the experimental data. In the case of Al/GaAs(110), the Al adatom substitutes the surface Ga atom to form an AlAs layer, and the Al chemisorption leads the relaxed GaAs (110) back to the unrelaxed ideal position.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.31.220
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 1982
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  • 4
    Online Resource
    Online Resource
    THE ATOMIC STRUCTURE AND ELECTRONIC STATES OF GaAs1-xPx (110)
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1983
    In:  Acta Physica Sinica Vol. 32, No. 2 ( 1983), p. 247-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 32, No. 2 ( 1983), p. 247-
    Abstract: In this paper, the clean surface GaAs1-xPx(110) has been studied by the EHT method using a cluster model. We obtained the following results: (1) the value of the rotated relaxation angle is about 26°. (2) For x≥0.25 the empty intrinsic cation states are found in the gap near the conduction band edge.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.32.247
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 1983
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  • 5
    Online Resource
    Online Resource
    Studies on some new Stemona alkaloids
    Elsevier BV ; 1982
    In:  Tetrahedron Vol. 38, No. 17 ( 1982), p. 2667-2670
    Details
    In: Tetrahedron, Elsevier BV, Vol. 38, No. 17 ( 1982), p. 2667-2670
    Type of Medium: Online Resource
    ISSN: 0040-4020
    URL: Article
    DOI: 10.1016/0040-4020(82)80020-3
    RVK:
    VA 7550
    Language: English
    Publisher: Elsevier BV
    Publication Date: 1982
    detail.hit.zdb_id: 2007072-X
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  • 6
    Online Resource
    Online Resource
    Chemistry of trichosanthin: IV. The main amino acid sequence of proposed principle primary structure of trichosanthin
    Wiley ; 1984
    In:  Acta Chimica Sinica Vol. 2, No. 1 ( 1984-09), p. 86-88
    Details
    In: Acta Chimica Sinica, Wiley, Vol. 2, No. 1 ( 1984-09), p. 86-88
    Type of Medium: Online Resource
    ISSN: 0256-7660
    URL: Issue
    URL: Article
    DOI: 10.1002/cjoc.v2:1
    DOI: 10.1002/cjoc.19840020115
    Language: English
    Publisher: Wiley
    Publication Date: 1984
    detail.hit.zdb_id: 2144352-X
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  • 7
    Online Resource
    Online Resource
    STUDIES OF HYDROGEN ADSORPTION ON Al(111) AND Ag(111) SURFACES BY EHT METHOD
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1983
    In:  Acta Physica Sinica Vol. 32, No. 7 ( 1983), p. 911-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 32, No. 7 ( 1983), p. 911-
    Abstract: The hydrogen adsorption on Al(111) and Ag(111) surfaces have been studied by the charge self-consistent EHT method. It is shown that the H2 molecule would dissociated on Al(111) surface, the H atom could be adsorbed at certain sites with symmetric geometry (such as the threefold, eclipsed, bridge and the atop sites), and H could penetrate into the surface layer and become an interstitial atom. However it is shown that the H2 molecule can be adsorbed on Ag(111) surface with H-H bond paralled to the surface, this result seems to be in fairly good agreement with the result of high resolution electron-energy-loss spectra for H2 on Ag at low temperature. In addition, when the temperature is high, the dissociative adsorption of H2 on Ag(111) surface is also possible.The merit of the method used is discussed.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.32.911
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 1983
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  • 8
    Online Resource
    Online Resource
    THE ELECTRICAL PROPERTIES OF KLiSO4 SINGLE CRYSTALS
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1982
    In:  Acta Physica Sinica Vol. 31, No. 8 ( 1982), p. 1073-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 31, No. 8 ( 1982), p. 1073-
    Abstract: In this paper, we have verified that the KLiSO4 single crystal is a Li ionic conductor. It was determined that carriers in KLiSO4 single crystal are interstitial Li ions and Li vacancies by measuring the voltage distribution in the specimen. After turning off the applied dc voltage, the decrease of current follows a negative power law of time in a certain time domain. Correspondingly, the dielectric dispersion which has a negative power relationship with frequency has also been found in a certain frequency domain. The background current, the dc electric conductivity and the apparent dielectric constant of KLiSO4 single crystal exhibit sharp peaks besides jump nearby the transition temperature. These peaks were observed only when the rate of temperature change is low, thus it is shown that the phase transition includes a relaxation process.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.31.1073
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 1982
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  • 9
    Online Resource
    Online Resource
    DIELECTRIC PROPERTIES OF THE IONIC CONDUCTOR SINGLE CRYSTALS UNDER THE ACTION OF A DC FIELD
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1981
    In:  Acta Physica Sinica Vol. 30, No. 12 ( 1981), p. 1576-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 30, No. 12 ( 1981), p. 1576-
    Abstract: In our previous works, it had been found the apparent dielectric constant ∈c′ of α-LiIO3 single crystal increases as a bias DC field is applied in the c direction. And it had been attributed to result of ionic conduction. In this paper, the dielectric properties of KLiSO4 and NaCl single crystals under the action of a DC field have been investigated. Similar to the situation of α-LiIO3 single crystal, the phenomenon of change of the apparent dielectric constant was observed in these crystals. It verified the conclusion mentioned above. We also studied the dependences of this property of ionic conductors on temperatures, frequencies and ambient atmosphere. The condition under which this phenomenon appeares was discussed.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.30.1576
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 1981
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  • 10
    Online Resource
    Online Resource
    Sb and Al chemisorption on GaAs(110)
    American Vacuum Society ; 1983
    In:  Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena Vol. 1, No. 3 ( 1983-07-01), p. 729-731
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 1, No. 3 ( 1983-07-01), p. 729-731
    Abstract: In the present paper the chemisorption of Al and Sb on the GaAs(110) surface is studied theoretically. In the case of higher coverage we designed a cluster model with Al4 sitting upon the GaAs(110) surface. The computer renormalization technique is used, and some pseudo-s-orbitals are adopted to fit the molecular orbitals of cluster Al4 by the least square method. The charge self-consistent extended Hückel method is used with a cluster model simulating the substrate GaAs(110). The calculated results show that differences do exist between column III and V elements on GaAs(110). The covalent character for the Sb–GaAs bond is quite obvious, whereas the Al overlayer cluster interacts only weakly with the substrate, so that covalent bonds can be formed only in the case of lower coverage.
    Type of Medium: Online Resource
    ISSN: 0734-211X , 2327-9877
    URL: Article
    DOI: 10.1116/1.582681
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1983
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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