In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 33, No. 6 ( 1984), p. 833-
Abstract:
The photoluminescent behavior of N+ and Zn+ implanted GaAs1-xPx has been investigated at 4.2 K. The experimental results show that the alloy composition x, at which N-Zn transition completely becomes N bound excitonic recombination, depends on the nitrogen and zinc impurity concentration.Using Campbell localized model, we calculated the probability ratio of N-Zn transition to N bound excitonic recombination as a function of composition and N, Zn impurity concentration.At 1.8 K, we have clearly observed the typical spectra of N-Zn transition and N bound excitonic recombination in the same sample.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
1984
Permalink