In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 23, No. 8A ( 1984-08-01), p. L567-
Abstract:
The influence of power-source frequency on the film properties of glow-discharge (GD) amorphous silicon has been studied in the range from 10 kHz to 50 MHz. Mechanical property, rather than photoelectric properties of the film, is highly influenced by the frequency, i.e., compressive internal stress is stored in the film when deposited from SiH 4 plasma operated by a frequency lower than 500 kHz. It has been demonstrated through mass spectrometric measurements that the internal stress is caused by ion bombardment on the growing surface of the film.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.23.L567
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1984
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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